• 한국세라믹학회지
• /
• 제34권7호
• /
• pp.722-730
• /
• 1997

The nonstoichiometry (x) of UO2+x and (Er0.06U0.94)O2+x has been in-situ measure against oxygen activity (Po2) at elevated temperatures by a coulometric titration method. From the dependence of the oxygen excess (x) of UO2+x on Po2 at 1000℃, it has been concluded that (2Vo2Oia2Oib)〃〃and (2Vo2Oia2Oib)' clusters are prevailing at low oxygen partial pressure [log(Po2/atm) -10.6] and at high oxygen partial pressure [log(Po2/atm) -10.6], respectively. The nonstoichiometry is found to be reduced with the addition of Er, which is ascribed to the fact that the fixed-valent Er3+ reduces the oxidation capacities of UO2+x. The enthalpy of oxygen incorporation in (Er0.06li0.94)O2+x has been evaluated from the mean valences of U-ion as -180±70 kJ/mole.

• 전기학회논문지
• /
• 제58권5호
• /
• pp.1004-1009
• /
• 2009

Recently, mass spectrometers are widely used for in-situ chemical analysis. It has rapid response and high sensitivity. In this paper, we present the fabrication and test of a cold cathode emitter for micro mass spectrometer using CNTs(Carbon nano tubes). The CNTs have good mechanical, electrical and chemical characteristics. So they have a long life time and strong robustness. The micro mass spectrometer is composed of the glass substrate and the silicon substrate. The glass substrate is constructed by electrodes for TOF(Time-of-flight) which analyze an ion with mass to charge ratio as ion separator. The silicon substrate is highly doped wafer which is patterned for gate electrode and then 100 11m dry etching to grow the CNTs as the electron emitter. The CNTs are grown by HFCVD(Hot filament chemical vapor deposition) with sputtering the catalyst. We successfully attained to grow the CNTs and to test the characteristics.

• 한국안전학회지
• /
• 제36권1호
• /
• pp.80-85
• /
• 2021

Radionuclides, particularly radioactive cesium (Cs), are a concern of human health in some nuclear power accidents. It could lead to a high level of intracellular accumulation due to its high radioactivity and long half-life. Therefore, it is imperative to develop a method to remove Cs from wastewater. Herein, we synthesized activated carbon fibers (ACFs) doped with Prussian blue (PB) via in situ methods. We classified samples by their preparation method as either physical (PB-ACF-A) or physicochemical (PB-ACF-B) syntheses for comparison. The PB-ACF-B sample showed a significant surface loss compared to PB-ACF-A but a better ¹³³Cs adsorption capacity. All samples fit well to Langmuir isotherms and the values of qmax were directly correlated to the amount of PB on the surface of the ACFs. Adsorption characteristics were further confirmed by the calculated free energy, enthalpy, and entropy.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.99-99
• /
• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Advances in materials Research
• /
• 제2권4호
• /
• pp.209-219
• /
• 2013

We have described primary studies on conductivity and molecular weight of polyaniline separately in the electric and magnetic fields when it is used in a field effect experimental configuration. We report further studies on doped in-situ deposited polyaniline. First we have chemically synthesized polyaniline by ammonium peroxodisulfate in acidic aques and organic solutions at different times. Then we measured mass and conductivity and obtained the best time of polymerizations. In continue, we repeated these reactions separately under different electric and magnetic fields in constant time and measured mass and conductivity. The polyaniline is characterized by gel permeation chromatography (GPC), UV-Visible spectroscopy and electrical conductivity. High molecular weight polyanilines are synthesized under electric field, $M_w$ = 520000-680000 g/mol, with $M_w/M_n$ = 2-2.5. The UV-Visible spectra of polyanilines oxidized by ammonium peroxodisulfate and protonated with dodecylbenzenesulfonic acid (PANi-DBSA), in N-methylpyrolidone (NMP), show a smeared polaron peak shifted into the visible. Electrical conductivity of polyanilines has been studied by four-probe method. The conductivity of the films of emeraldine protonated by DBSA cast from NMP are higher than 500 and 25 S/cm under 10 KV/m of potential) electric field and 0.1 T magnetic field, respectively. It shows an enhanced resistance to ageing too. By the next steps, we carried chemical polymerization at the best electric and magnetic fields at different times. Finally, resulted in finding the best time and amount of the fields. The longer polymerization time and the higher magnetic field can lead to degradation of polyaniline films and decrease conductivity and molecular mass.

• 한국추진공학회:학술대회논문집
• /
• 한국추진공학회 2004년도 제22회 춘계학술대회논문집
• /
• pp.802-806
• /
• 2004

For the protection of the local air quality and the global atmosphere, the emissions of trace species including nitric oxides (NO and NO$_2$) from gas turbines are regulated by local governments and by the International Civil Aviation Organization. In-situ measurements of such species are needed not only for the development of advanced low-emission combustion concepts but also for providing emissions data required for the sound assessment of the effects of the emissions on environment. We have been developing a laser absorption system that has a capability of simultaneous determination of NO and NO$_2$concentrations in the exhaust jets from aero gas turbines. A diode laser operating near 1.8 micrometer is used for the detection of NO while a separated visible tunable diode laser operating near 676 nanometers is used for NO$_2$. The sensitivities at elevated temperature conditions were determined for simulated gas mixtures heated up to 500K in a heated cell of a straight 0.5 m optical path. Sensitivity limits estimated as were 30 ppmv-m and 3.7 ppmv-m for NO and NO$_2$, respectively, at a typical exhaust gas temperature of 800K. Experiments using the simulated exhaust flows have proven that $CO_2$ and $H_2O$ vapor - both major combustion products - do not show any interference in the NO or NO$_2$ measurements. The measurement system has been applied to the NO/NO$_2$ measurements in NO and NO$_2$ doped real combustion gas jets issuing from a rectangular nozzle having 0.4 m optical path. The lower detection limits of the system were considerably decreased by using a multipass optical cell. A pair of off-axis parabola mirrors successfully suppressed the beam steering in the combustion gas jets by centralizing the fluctuating beam in sensor area of the detectors.

• Progress in Superconductivity
• /
• 제9권1호
• /
• pp.80-84
• /
• 2007

Charcoal was used as a carbon source for improving the critical current density of $MgB_2$ and the effect of annealing temperature on the $J_c$ of $MgB_2$ was investigated. The charcoal powder used in this study was $1{\sim}2$ microns in size and was prepared by wet attrition milling. $MgB_2$ bulk samples with a nominal composition of $Mg(B_{0.95}C_{0.05})_2$ were prepared by in situ process of Mg and B powders. The powder mixture was uniaxially compacted into pellets and heat treated at temperatures of $650^{\circ}C\;-\;1000^{\circ}C$ for 30 minutes in flowing Ar gas. It was found that superconducting transition temperature of $Mg(B_{0.95}C_{0.05})_2$ decreased by charcoal additions which indicates the carbon substitution for boron site. $J_c$ of $Mg(B_{0.95}C_{0.05})_2$ was lower than that of the undoped $MgB_2$ at the magnetic fields smaller than 4 Tesla, while it was higher than that of the undoped sample especially at the magnetic field higher than 4 T. High temperature annealing seems to be effective in increasing $J_c$ due to the enhanced carbon diffusion into boron sites.

• Progress in Superconductivity
• /
• 제12권2호
• /
• pp.75-81
• /
• 2011

We report on the progress that has been made in developing $MgB_2$ superconducting wires and tapes for commercialization and research efforts. A number of techniques have been developed to overcome the obstacle posed by the poor critical current density ($J_c$) of pristine $MgB_2$. Chemical doping has proved to be the effective way to modify and enhance the superconducting properties, such as the $J_c$ and the irreversibility field ($B_{irr}$). More than 100 different types of dopants have been investigated over the past 8 years. Among these, the most effective dopants have been identified to be SiC and malic acid ($C_4H_6O_5$). The best results, viz. a $B_{irr}$ of 22 T and $J_c$ of $30,000\;A{\cdot}cm^{-2}$ at 4.2 K and 10 T, were reported for malic acid doped $MgB_2$ wires, which matched the benchmark performance of commercial low temperature superconductor wires. In this work, we discuss the progress made in $MgB_2$ conductors over the past few years at the University of Wollongong, Hyper Tech Research, Inc., and Ohio State University.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제6권2호
• /
• pp.61-67
• /
• 2006

We fabricate local damascene FinFET cell array in sub-60nm feature sized DRAM. The local damascene structure can remove passing-gate-effects in FinFET cell array. p+ boron in-situ doped polysilicon is chosen for the gate material, and we obtain a uniform distribution of threshold voltages at around 0.7V. Sub-threshold swing of 75mV/d and extrapolated off-state leakage current of 0.03fA are obtained, which are much suppressed values against those of recessed channel array transistors. We also obtain a few times higher on-state current. Based on the improved on- and off-state current characteristics, we expect that the FinFET cell array could be a new mainstream structure in sub-60nm DRAM devices, satisfying high density, low power, and high-speed device requirements.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.426.1-426.1
• /
• 2014

For high performance thin film solar cells, texturing surface, enhancing the optical absorptionpath, is pretty important. Textured ZnO:Al transparent oxide layer of high haze is commonly used in Si thin film solar cells. In this paper, novel deposition method for aluminum doped zinc oxide (ZnO:Al) on glass substrates is presented to improve the haze property. The broccoli structure of ZnO:Al layer was formed on chemically etched glass substrates, which showed high haze value on a wide wavelength range.The etching condition of the glass substrates can change not only the haze values of the ZnO:Al of in-situ growth but alsothe electrical and optical properties of the deposited ZnO:Al films.The etching mechanism of the glass substrate affecting on the surface morphology of the glass will be discussed, which resulted in variation of texture of ZnO:Al layer. The optical properties of substrate morphology were also analyzed with EDS and FTIR results. As a result, the high haze value of 85.4% was obtained in the wavelength range of 300 nm to 1100 nm. Furthermore, low sheet resistance of about 5~18 ohm/sq was achieved for different surface morphologies of the ZnO:Al films.