• Title/Summary/Keyword: in-filled trench

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Reduction of train-induced vibrations on adjacent buildings

  • Hung, Hsiao-Hui;Kuo, Jenny;Yang, Yeong-Bin
    • Structural Engineering and Mechanics
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    • v.11 no.5
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    • pp.503-518
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    • 2001
  • In this paper, the procedure for deriving an infinite element that is compatible with the quadrilateral Q8 element is first summarized. Enhanced by a self mesh-expansion procedure for generating the impedance matrices of different frequencies for the region extending to infinity, the infinite element is used to simulate the far field of the soil-structure system. The structure considered here is of the box type and the soils are either homogeneous or resting on a bedrock. Using the finite/infinite element approach, a parametric study is conducted to investigate the effect of open and in-filled trenches in reducing the structural vibration caused by a train passing nearby, which is simulated as a harmonic line load. The key parameters that dominate the performance of wave barriers in reducing the structural vibrations are identified. The results presented herein serve as a useful guideline for the design of open and in-filled trenches concerning wave reduction.

The Development of Filled Material for Reduction of Train Vibration (열차 진동 저감을 위한 채움재 개발)

  • 장강석;권형오;김두훈;이일화;황선근
    • Proceedings of the KSR Conference
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    • 1998.11a
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    • pp.30-38
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    • 1998
  • Nowadays, the environmental vibration criteria has been severely restricted from the viewpoint of recipient. The vibration created by urban transit systems can be an important source of community discontent, and can have influence on high technology equipments. This has led to a desire of transit system operators to reduce vibration and to minimize community exposure to vibration. Recent research in this area has significantly increased for transit system engineers to reduce vibration. Unlike other material, soil has a complicated characteristic and it is very difficult to prevent vibration from transmitting. Generally, the trench can use to breaking propagation of vibration on passing way but needs much too maintenance. Therefore, the filled materials for trench had successfully developed and the characteristic test for the filled material had conducted during this term. Finally, we had executed analyses of real characteristic through the propagation test of ground vibration.

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Design of Low Consume Power Ty7e Micro-heaters Using SOl and Trench Structures (SOI 및 TRENCH 구조를 이용한 저소비 전력형 미세발열체의 설계)

  • Jang, Soo;Hong, Seok-Woo;Lee, Jong-Chun;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.350-353
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    • 1999
  • This Paper Presents the optimized design of micro-heaters using 501(Si-on-insulator) substrate and oxide-filled trench structure In order to justify a lumped model approximation and thermal boundary assumptions, two-dimensional FDM(finite difference among which conduction is the dominant heat dissipation path. Compared with no-trenchs on the SOI structure, the micro-heaters with trench structures has properties of low heater loss and good thermal isolation. The simulation results show that the heater loss decreases as the number. width and distance of trenchs increases.

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Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO2 or SiO2 Trench Isolation

  • Nam, Hyohyun;Park, Seulki;Shin, Changhwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.4
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    • pp.427-435
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    • 2014
  • Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

The Fabrication of Micro-heaters with Low Consumption Power Using SOI and Trench Structures and Its Characteristics (SOI와 트랜치 구조를 이용한 초저소비전력형 미세발열체의 제작과 그 특성)

  • 정귀상;홍석우;이원재;송재성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.3
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    • pp.228-233
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    • 2001
  • This paper presents the optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro elelctro mechanical system) applications usign SOI (Si-on-insulator) and trench structures. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10㎛ thick Si membrane with oxide-filled trenches in the SOI membrane rim. The micro-heater was fabricated with Pt-RTD (resistance thermometer device) on the same substrate by suing MgO as medium layer. The thermal characteristics of the micro-heater wit the SOI membrane is 280$\^{C}$ at input power 0.9W; for the SOI membrane with 10 trenches, it is 580$\^{C}$ due to reduction of the external thermal loss. Therefore, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro-thermal sensors and actuators.

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Reduction of Railway-induced Vibration using In-filled Trenches with Pipes

  • Hasheminezhad, Araz
    • International Journal of Railway
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    • v.7 no.1
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    • pp.16-23
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    • 2014
  • Reduction in railway-induced vibrations in urban areas is a very challenging task in railway transportation. Many mitigation measures can be considered and applied. Among these, a little attention has been paid to trenches. In this study, a numerical investigation on the effectiveness of in-filled trenches with pipes in reducing railway vibrations due to passing trains is presented. Particularly, a series of two-dimensional dynamic analysis was performed to model the behavior of ballasted railway track under harmonic load with ABAQUS software as a Finite Element method. In so doing, two types of in-filled trenches with pipes with steel and concrete materials have been investigated in this paper. In addition, effectiveness of pipes made of steel and concrete, filled with loose sand and clay in railway-induced vibration reduction has been assessed. The results point out that using in-filled trench with pipes does not effective a lot on railway-induced vibration reduction in comparison to other railway-induced vibration reduction methods. However, in-filled trenches with steel pipes are much more effective than in-filled trenches with concrete pipes. Moreover, filling pipes with loose sand and clay does not have any effect on vibration reduction efficiency of these in-filled trenches.

A New Method for Deep Trench Isolation Using Selective Polycrystalline Silicon Growth (다결정 실리콘의 선택적 성장을 이용한 깊은 트랜치 격리기술)

  • 박찬우;김상훈;현영철;이승윤;심규환;강진영
    • Journal of the Korean Vacuum Society
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    • v.11 no.4
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    • pp.235-239
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    • 2002
  • A new method for deep trench isolation using selective growth of polycrystalline silicon is proposed. In this method, trench filling is performed by forming polysilicon-inner sidewalls within the trench, and then selectively growing them by reduced chemical vapor deposition using $SiH_2C1_2$gas at $1100^{\circ}C$. The surface profiles of filled trenches are determined mainly by the initial depth of inner sidewalls and the total thickness of selective growth. No chemical mechanical polishing(CMP) process is needed in this new method, which makes the process flow simpler and more reliable in comparison with the conventional method using CMP process.

The Fabrication of Micro-Heaters with Low-Power Consumption Using SOI and Trench Structures

  • Chung, Gwiy-Sang;Hong, Seok-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05a
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    • pp.197-201
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    • 2002
  • This paper presents optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro electro mechanical system) applications using SOI and trench structures. The micro-heaters are based on a thermal measurement principle and contains thermal isolation regions of 10 ${\mu}m$-thick Si membranes consisting of oxide-filled trenches in the SOI membrane rim. The micro-heaters were fabricated with Pt-RTD on the same substrate via MgO buff layer between Pt thin-film and $SiO_2$ layer. The thermal characteristics of micro-heater with trench-free SOI membrane structure was $280^{\circ}C$ at input power 0.9 W; in the presence of 10 trenches, it was $580^{\circ}C$ due to reduction of the external thermal loss. Therefore, a micro-heater with trenches in SOI membrane rim structure provides a powerful and versatile alternative technology for enhancing the performance of micro-thermal sensors and actuators.

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An innovative vibration barrier by intermittent geofoam - A numerical study

  • Majumder, Mainak;Ghosh, Priyanka;Sathiyamoorthy, Rajesh
    • Geomechanics and Engineering
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    • v.13 no.2
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    • pp.269-284
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    • 2017
  • A new technique is proposed to obtain more effective screening efficiency against the ground vibration using intermittent geofoam (IF) in-filled trench. The numerical analysis is performed by employing two-dimensional finite element method under dynamic condition. Vertically oscillated strip foundation is considered as the vibration source. In presence of the ground vibration, the vertical displacements at different locations (pick-up points) along the ground surface are captured to determine the amplitude reduction factor (ARF), which helps to assess the efficiency of the vibration screening technique. The efficiency of IF over continuous geofoam (CF) in-filled vibration barriers is assessed by varying the geofoam density, the location of trench and the frequency of excitation. The results from this study indicate that a significant reduction in ARF can be achieved by using intermittent geofoam as compared to continuous geofoam. Further, it is noticed that the efficiency of IF increases with an increase in the frequency of the vibrating source. These encouraging results put forward the potential of utilising intermittent geofoam as a vibration screening material.

Effects of Current Density and Organic Additives on via Copper Electroplating for 3D Packaging (3D패키지용 Via 구리충전 시 전류밀도와 유기첨가제의 영향)

  • Choi, Eun-Hey;Lee, Youn-Seoung;Rha, Sa-Kyun
    • Korean Journal of Materials Research
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    • v.22 no.7
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    • pp.374-378
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    • 2012
  • In an effort to overcome the problems which arise when fabricating high-aspect-ratio TSV(through silicon via), we performed experiments involving the void-free Cu filling of a TSV(10~20 ${\mu}m$ in diameter with an aspect ratio of 5~7) by controlling the plating DC current density and the additive SPS concentration. Initially, the copper deposit growth mode in and around the trench and the TSV was estimated by the change in the plating DC current density. According to the variation of the plating current density, the deposition rate during Cu electroplating differed at the top and the bottom of the trench. Specifically, at a current density 2.5 mA/$cm^2$, the deposition rate in the corner of the trench was lower than that at the top and on the bottom sides. From this result, we confirmed that a plating current density 2.5 mA/$cm^2$ is very useful for void-free Cu filling of a TSV. In order to reduce the plating time, we attempted TSV Cu filling by controlling the accelerator SPS concentration at a plating current density of 2.5 mA/$cm^2$. A TSV with a diameter 10 ${\mu}m$ and an aspect ratio of 7 was filled completely with Cu plating material in 90 min at a current density 2.5 mA/$cm^2$ with an addition of SPS at 50 mg/L. Finally, we found that TSV can be filled rapidly with plated Cu without voids by controlling the SPS concentration at the optimized plating current density.