• 제목/요약/키워드: in situ spectroscopy

검색결과 271건 처리시간 0.023초

레이저유도 플라즈마분광법을 이용한 방사성폐기물 유리의 현장분석 시스템 개발 (Development of in-situ Analysis System for Radwaste Glass Using Laser Induced Breakdown Spectroscopy)

  • 김천우;박종길;신상운;하종현;송명재;이계호
    • 한국방사성폐기물학회:학술대회논문집
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    • 한국방사성폐기물학회 2004년도 학술논문집
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    • pp.137-146
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    • 2004
  • 방사성폐기물 유리화 공전 중 용융로 내에서 유리시료를 직접분석 하기 위한 레이저유도 플라즈마분광법(LIBS: Laser Induced Breakdown Spectroscopy)을 개발 중이다. LIBS 시스템을 구성하기 위하여 분광기, 검출기, 레이저 등의 장비들을 구축하였다. 분광기는 CCD(charge coupled device)가 보정되어 내장되어있는 ESA 3000을 레이저는 Q-switched Nd-YAG인 Brilliant로 구매하여 분석시스템을 구축하였다. 구축된 분석시스템 분야별 성능들을 확인하였으며 최적화 연구를 수행하였다. 첫 번째 단계로 Fe가 함유된 시료에 레이저를 주사하였을 때 발광스펙트럼을 측정하였으며 검출기의 지연시간을 변화시켰을 때의 발광스펙트럼의 특성과 이를 이용한 여기온도를 Einstein-Boltzmann 식을 이용하여 계산하였다. 시료에 532nm Nd-YAG 레이저를 주사하고 검출기의 지연시간을 500, 1000, 1500, 2000ns로 변화시켰을 때의 분광선의 intensity 및 여기온도 변화를 분석하였다. 그 결과 검출시간이 1500㎱ 일 때 여기온도는 7820k로 가장 최적의 상태를 확인하였다. 향후 이 시스템은 유리화 실증시설에 적용되어 용융로 외부로의 유리시료 이송 없이 현장에서 유리성분들의 정량분석을 수행할 예정이다.

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라만 분광법을 이용한 반도체 공정 중 표면 분석 (Surface analysis using Raman spectroscopy during semiconductor processing)

  • 최태민;유진욱;정은수;이채연;이화림;김동현;표성규
    • 한국표면공학회지
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    • 제57권2호
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    • pp.71-85
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    • 2024
  • This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.

In Situ X-ray Photoemission Spectroscopy Study of Atomic Layer Deposition of $TiO_2$ on Silicon Substrate

  • Lee, Seung-Youb;Jeon, Cheol-ho;Kim, Yoo-Seok;Kim, Seok-Hwan;An, Ki-Seok;Park, Chong-Yun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.222-222
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    • 2011
  • Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

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표면 조성분석의 정량화를 위한 Pt-Co 합금박막 표준시료의 개발 및 공동분석 (Development and Round Robin Test of Pt-Co Alloy Thin Film Standard Materials for the Quantification of Surface Compositional Analysis)

  • 김경중
    • 한국진공학회지
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    • 제7권3호
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    • pp.176-186
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    • 1998
  • Si 기판 위에 3종의 Pt-Co 합금박막 (Pt66-Co34, Pt40-Co60, Pt18-Co82)과 순수한 Pt, Co 박막 시료를 제작하여 표면 조성분석의 정량화 및 표준화를 위한 표준시료로 제안하 였다. in-istu X-ray photoelectron spectroscopy(XPS)분석에 의해 증착된 이원 합금박막의 조성이 정확히 조절되었으며, 합금박막의 실제 조성은 유도결합플라즈마-원자방출분광법 (inductively coupled plasma-atomic emission spectroscopy: ICP-AES)과 러더퍼드 후방산 란분광법(Ruthford back-scattering spectrometry: RBS)에 의해 결정되었다. in-situ XPS 결과와 ICP에 의한 조성을 비교한 결과 매질 효과를 고려하면 비교적 정확한 조성을 구할 수 있음이 확인되었다. 이 시료를 이용한 XPS와 Auger electron spectroscopy(AES)에 의한 국내 공동분석 결과는 약4%내외의 큰 편차를 보이고 있지만, 평균 조성 값은 약1%의 오차 범위 내에서 두 방법에 의한 결과가 서로 잘 일치하였다. 이온빔 스퍼터링에 의해 Pt조성이 증가된 표면층이 형성되어 정확한 조성분석을 위해서는 선택스퍼터링에 의한 표면 변형을 정량적으로 함을 알았다.

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In Situ Spectroscopy in Condensed Matter Physics

  • Noh, Tae Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.92-92
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    • 2014
  • Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

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In-situ Raman Spectroscopic Study of Nickel-base Alloys in Nuclear Power Plants and Its Implications to SCC

  • Kim, Ji Hyun;Bahn, Chi Bum;Hwang, Il Soon
    • Corrosion Science and Technology
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    • 제3권5호
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    • pp.198-208
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    • 2004
  • Although there has been no general agreement on the mechanism of primary water stress corrosion cracking (PWSCC) as one of major degradation modes of Ni-base alloys in pressurized water reactors (PWR's), common postulation derived from previous studies is that the damage to the alloy substrate can be related to mass transport characteristics and/or repair properties of overlaid oxide film. Recently, it was shown that the oxide film structure and PWSCC initiation time as well as crack growth rate were systematically varied as a function of dissolved hydrogen concentration in high temperature water, supporting the postulation. In order to understand how the oxide film composition can vary with water chemistry, this study was conducted to characterize oxide films on Alloy 600 by an in-situ Raman spectroscopy. Based on both experimental and thermodynamic prediction results, Ni/NiO thermodynamic equilibrium condition was defined as a function of electrochemical potential and temperature. The results agree well with Attanasio et al.'s data by contact electrical resistance measurements. The anomalously high PWSCC growth rate consistently observed in the vicinity of Ni/NiO equilibrium is then attributed to weak thermodynamic stability of NiO. Redox-induced phase transition between Ni metal and NiO may undermine the integrity of NiO and enhance presumably the percolation of oxidizing environment through the oxide film, especially along grain boundaries. The redox-induced grain boundary oxide degradation mechanism has been postulated and will be tested by using the in-situ Raman facility.

In situ 광전자분광/역광전자분광 분석을 이용한 유기물 계면의 전자구조 연구 (In situ photoemission and inverse photoemission studies on the interfacial electronic structures of organic materials)

  • 이연진
    • 진공이야기
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    • 제2권2호
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    • pp.4-11
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    • 2015
  • 본 글에서는 광전자 분광 및 역광전자 분광을 이용한 유기분자 시스템의 전자구조 연구에 대하여 기술하였다. 다양한 유기물간의 계면 연구가 급속도로 늘어나고 있으며, 폴리머, 거대 분자 등 기존의 in situ 분석 방법으로 실험이 어려운 물질까지도 연구의 필요성이 늘어나고 있다. Electrospray 증착 방법이 이러한 새로운 물질들의 계면 전자구조 연구를 가능하게 할 수 있음을 살펴보았으며, 다양한 새로운 분석 기법들의 출현을 기대해 본다. 몇 가지 예에서 살펴본 바와 같이 전자구조는 소자 구동 특성을 직접적으로 지배하는 핵심적인 물리량이며, 전자구조의 이해를 통해 전자소자의 구동 원리, 성능 최적화 및 소자 특성 열화의 원인을 파악할 수 있다. 현재, 유기물 소자 관련 기술의 성숙도는 전자구조 분석과 같은 기초 연구 결과 없이는 더 이상 발전할 수 없는 정도에 이르러, 관련 분석 기술에 대한 수요가 더욱 늘어날 것으로 전망된다.

실시간 In-situ IR을 이용한 Glycidyl Azide Monomer(GAM)의 양이온중합 반응속도 연구 (Kinetic Study on the Cationic Polymerization of Glycidyl Azide Monomer(GAM) by Real-Time In-suti IR)

  • 김형석;김관영;강신춘;노시태;김진석;유재철;최근배
    • 한국군사과학기술학회지
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    • 제12권2호
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    • pp.228-235
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    • 2009
  • We synthesized glycidyl azide monomer(GAM) as a monomer for polymerization of glycidy azide polymer(GAP) which is a promising energetic prepolymer for a plastic-bonded explosive. Using quantitative real-tim in-situ infrared(in-situ IR) spectroscopy, kinetic study on the cationic ring opening polymerization of GAM was carried out. The reaction rate was obtained from monitoring the change of ether C-O stretching band($1050cm^{-1}$) in series IR spectra. The reaction was in accordance with the first-order reaction law for each of reaction temperature at 100/1 mole ratio of [GAM]/[$BF_3*etherate$]. In the ring opening polymerization of GAM, with ratio of [GAM]/[$BF_3*etherate$] to equal 100/1 at various temperature, the activation parameters obtained from the evaluation of kinetic data were ${\Delta}H^*$=14.34kcal/mol, ${\Delta}S^*=-12.31cal/mol{\cdot}K$ and $E_a$=14.89kcal/mol.

웨이블렛과 신경망을 이용한 플라즈마-유도 X-Ray Photoelectron Spectroscopy 고장 패턴의 인식 (Recognition of Plasma- Induced X-Ray Photoelectron Spectroscopy Fault Pattern Using Wavelet and Neural Network)

  • 김수연;김병환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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    • pp.135-137
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    • 2006
  • To improve device yield and throughput, faults in plasma processing equipment should be quickly and accurately diagnosed. Despite many useful information of ex-situ sensor measurements, their applications to recognize plasma faultshave not been investigated. In this study, a new technique to identify fault causes by recognizing X-ray photoelectron spectroscopy (XPS) using neural network and continuous wavelet transformation (CWT). The presented technique was evaluated with the plasma etch data. A totalof 17 experiments were conducted for model construction. Model performance was investigated from the perspectives of training error, testing error, and recognition accuracy with respect to various thresholds. CWT-based BPNN models demonstrated a higher prediction accuracy of about 26%. Their advantages over pure XPS-based models were conspicuous in all three measures at small networks.

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