• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.137-146
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• 2004

Laser Induced Breakdown Spectroscopy(LIBS) system is being developed as an in-situ analysis system for the radioactive waste glass in the cold crucible melter. In order to complete the LIBS system, a spectrometer, a detector, and a laser were structured. An ESA 3000 (LLA Instruments GmbH, Germany) including a calibrated Kodak KAF-1001 CCD detector was selected as the spectrometer. A Q-switched Nd-YAG Brilliant(Quantel, France) laser was selected as an energy source. As the first research stage, the excitation temperatures of Fe(I) as a function of the detector's delay intervals(500, 1000, 1500, 2000ns) were evaluated using the Einstein-Boltzmann equation. The optimized excitation temperature of Fe (I) was 7820k at the delay time of 1500㎱ using the 532nm Nd-YAG laser pulse. This LIBS system will be optimized under the real environment vitrification facility in the near future and then used to be in-situ analyzed the glass compositions in the melter qualitatively.

• Journal of the Korean institute of surface engineering
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• v.57 no.2
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• pp.71-85
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• 2024

This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.193-193
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• 2003

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.176-186
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• 1998

Pure Pt, Co and their alloy thin films with three different compositions (Pt66-Co34, Pt40-Co60 and Pt18-Co82) were deposited on Si(100) wafers and proposed as a set of certified reference materials (CRM) for the quantification and standardization of surface compositional analysis. The compositions of the binary alloy thin films were controlled by in-situ XPS analyses and the certified compositions of the films have been determined by ICP-AES and RBS analyses after thin film growth. Through comparison of the compositions determined by in-situ XPS with those by ICP, relatively accurate compositions could be obtained with a matrix effect correction. Standard deviations of XPS and AES round robin tests with the Pt-Co alloy thin films were large up to about 4%. On the other hand, the average compositions of the Pt-Co alloy thin films by two methods were in a good agreement within 1%. The formation of a Pt rich surface layer by ion beam sputtering indicates that the surface modification by preferential sputtering must be understood for a better compositional analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.92-92
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• 2014

Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

• Corrosion Science and Technology
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• v.3 no.5
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• pp.198-208
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• 2004

Although there has been no general agreement on the mechanism of primary water stress corrosion cracking (PWSCC) as one of major degradation modes of Ni-base alloys in pressurized water reactors (PWR's), common postulation derived from previous studies is that the damage to the alloy substrate can be related to mass transport characteristics and/or repair properties of overlaid oxide film. Recently, it was shown that the oxide film structure and PWSCC initiation time as well as crack growth rate were systematically varied as a function of dissolved hydrogen concentration in high temperature water, supporting the postulation. In order to understand how the oxide film composition can vary with water chemistry, this study was conducted to characterize oxide films on Alloy 600 by an in-situ Raman spectroscopy. Based on both experimental and thermodynamic prediction results, Ni/NiO thermodynamic equilibrium condition was defined as a function of electrochemical potential and temperature. The results agree well with Attanasio et al.'s data by contact electrical resistance measurements. The anomalously high PWSCC growth rate consistently observed in the vicinity of Ni/NiO equilibrium is then attributed to weak thermodynamic stability of NiO. Redox-induced phase transition between Ni metal and NiO may undermine the integrity of NiO and enhance presumably the percolation of oxidizing environment through the oxide film, especially along grain boundaries. The redox-induced grain boundary oxide degradation mechanism has been postulated and will be tested by using the in-situ Raman facility.

• Vacuum Magazine
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• v.2 no.2
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• pp.4-11
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• 2015

During last two decades, remarkable progresses have been made in organic electronic devices, such as organic light-emitting device, organic photovoltaic and many other applied devices. Many of these progress are attributed to the multilayered/heterojunction device architectures, which could be achieved from the control of "interfacial energetics". In that sense, the interfacial electronic structures in organic electronic devices have a decisive role in device performance. However, the prediction of the interfacial electronic structures from each separate material is not trivial. Many complex phenomena occur at the interface and these can be only understood from thorough measurements on interfacial electronic structures in situ. Photoemission and inverse photoemission spectroscopy have been known as the most proper measurement tools to analyze these interfacial electronic structures. In this review, the basic principles of (inverse) photoemission spectroscopy and typical measurement results on organic/inorganic interfaces are introduced.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.2
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• pp.228-235
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• 2009

We synthesized glycidyl azide monomer(GAM) as a monomer for polymerization of glycidy azide polymer(GAP) which is a promising energetic prepolymer for a plastic-bonded explosive. Using quantitative real-tim in-situ infrared(in-situ IR) spectroscopy, kinetic study on the cationic ring opening polymerization of GAM was carried out. The reaction rate was obtained from monitoring the change of ether C-O stretching band($1050cm^{-1}$) in series IR spectra. The reaction was in accordance with the first-order reaction law for each of reaction temperature at 100/1 mole ratio of [GAM]/[$BF_3*etherate$]. In the ring opening polymerization of GAM, with ratio of [GAM]/[$BF_3*etherate$] to equal 100/1 at various temperature, the activation parameters obtained from the evaluation of kinetic data were ${\Delta}H^*$=14.34kcal/mol, ${\Delta}S^*=-12.31cal/mol{\cdot}K$ and $E_a$=14.89kcal/mol.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.135-137
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• 2006

To improve device yield and throughput, faults in plasma processing equipment should be quickly and accurately diagnosed. Despite many useful information of ex-situ sensor measurements, their applications to recognize plasma faultshave not been investigated. In this study, a new technique to identify fault causes by recognizing X-ray photoelectron spectroscopy (XPS) using neural network and continuous wavelet transformation (CWT). The presented technique was evaluated with the plasma etch data. A totalof 17 experiments were conducted for model construction. Model performance was investigated from the perspectives of training error, testing error, and recognition accuracy with respect to various thresholds. CWT-based BPNN models demonstrated a higher prediction accuracy of about 26%. Their advantages over pure XPS-based models were conspicuous in all three measures at small networks.