• Nuclear Engineering and Technology
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• 제30권1호
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• pp.17-25
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• 1998

Transport of carbon and boron impurity ions parallel to magnetic field lines in the tokamak SOL (scrape-off layer) is numerically investigated for a one-dimensional steady state. The spatial distributions of density and velocity of the impurity ions in a steady state are calculated by finite difference method for a single-fluid model. The calculated results show that among forces acting on SOL particles thermal force produced tv plasma temperature gradient is a principal force determining the feature of impurity distribution profiles in the tokamak edge. However, strong collisional friction forces appearing dominant in front of the diverter plate restrain impurity ion flows due to temperature gradients from moving toward the midplane. Consequently, the stagnation point develops in the impurity flow by these two forces near the diverter region, in which ion flows change their directions. Impurity ions turn out to be accumulated at the stagnation points, where peaked profiles of highly-ionized state ions are relatively predominant over those of low-ionized state ions.

• 공업화학
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• 제8권3호
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• pp.389-394
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• 1997

경각형 결정화에 의하여 벤젠-사이클로헥산 혼합물로부터 벤젠의 결정화에서 결정에 내포된 불순물(사이클로헥산)의 분포가 조사되었다. 결정의 순도에 미치는 결정성장속도의 영향을 파악하였으며 모든 실험결과는 Wintermantel 모델에 의해 도시될 수 있었다. 결정의 순도는 과냉각 정도가 클수록, 주입조성이 낮을 수록, 결정성장속도가 클 수록 낮았으며 결정성장속도는 불순물의 내포를 지배하는 가장 중요한 변수이다. 결정화 초기에 형성된 결정은 불순물을 많이 내포하고 있으며 결정의 두께가 증가함에 따라 불순물은 잔여용융액쪽으로 이동되어 배제됨을 알 수 있었다. 경막결정화에서 결정에 내포된 불순물은 일정두께의 결정층에 온도구배를 이용하여 결정을 부분용해시키면 불순물의 확산에 의하여 제거될 수 있음을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1034-1040
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• 2004

The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.51-54
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• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.

• 한국진공학회지
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• 제9권2호
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• pp.150-154
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• 2000

Impurity-free vacancy diffusion 방법을 이용하여 압축 응력을 가진 InGaAs/InGaAsP 다중 양자 우물 구조에서 열처리 온도에 따른 무질서 정도를 조사하였다. InGaAs/SiO$_2$ cap 구조가 InP/$SiO_2$ cap 구조보다 급속열처리 (rapid thermal annealing : RTA) 과정에서 더 많은 청색 천이를 나타내었다. 열처리 온도 $700^{\circ}C$에서, InGaAs/$SiO_2$ cap 구조의 경우 다중양자우물의 밴드갭 파장은 1.55 $\mu\textrm{m}$대역에서 1.3 $\mu\textrm{m}$ 대역으로 이동하였으며, InGaAs/$SiO_2$ cap 구조와 InP/$SiO_2$ cap 구조의 밴드갭 파장차이는 195 nm (123 meV)로 높은 선택성을 나타내었다. 또한, DCXRD 스펙트럼으로부터 다중양자우물 구조에서 균일한 합금형태로 완전히 무질서화되는 것을 볼 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.101-103
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• 2009

Minimizing the residual impurity level on the MgO layer is the key factor for reducing temporal dark image sticking on bright screen. In this paper, to reduce the residual impurity level on the MgO layer of 50-in. full-HD ac-PDP with He (35%) - Xe (11%) contents, RF-plasma treatments on the MgO layer are adopted under various gases for plasma treatment. As a result of monitoring the difference in the display luminance between the before and after 5-min. sustain discharge with a square-type image at peak luminance, the Ar and Ar>$O_2$ plasma treatments can reduce the temporal dark image sticking on the bright screen in an ac-PDP.

• 한국진공학회지
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• 제12권S1호
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Progress in Superconductivity
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• 제10권1호
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

• Corrosion Science and Technology
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• 제5권4호
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• pp.149-152
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• 2006

$BaTiO_3$ coatings were prepared by micro arc oxidation (MAO) method. Only $Ba(OH)_2$ was dissolved in the electrolyte and process time was less than 30 min. Commercial purity $Ba(OH)_2$ (97%) containing $BaCO_3$ as impurity was used in preparing the electrolyte. XRD showed that the coating was composed of largely $BaTiO_3$, and in some process conditions, small quantity of impurity, $BaCO_3$, was characterized in the coating layer. The quantity of $BaCO_3$ could be controlled to negligible quantity by regulating the applied voltage and duration time of the MAO process.

• 한국진공학회지
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• 제8권4A호
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.