• Journal of Korean Vacuum Science & Technology
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• 제2권1호
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• pp.13-19
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• 1998

We have calculated the electronic structure of impurity atoms in metal host by using the tight binding model in the recursion method. For a self-consistent calculation, we assumed that the effect of impurity introduction was localized only at the impurity site and its neighbours. We calculated the Madelung term by limiting the contribution to Vm of the charge perturbations to the first shell around the impurity with Evjen technique. The calculated local density of states and charge transfer values have been compared with the experimental values for a single impurity in metal host. We fund that d-reso-nance state came from the repulsive interaction between impurity d-state and host band, and the position of d-resonance state depended on the difference of valence electrons between the host and the impurity. the results also showed that the charge transfer value between an impurity and host metal was comparable to the ionicity difference between them.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
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• pp.72-73
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• 2009

First-principles calculations were carried out to investigate the effects of Al impurities on bcc Fe magnetism by considering SOC. No significant solid solution hardening effect was found. Albeit the effects of the SOC by Al on spin magnetic moments were minor, there are sizeable orbital magnetic effects. It is concluded that the orbital magnetism due to the Al impurity is strongly related with the impurity screening of the system as seen in Si impurity case [3], but the effects of Al impurity is stronger than those of Si impurity in terms of orbital magnetism.

• Nuclear Engineering and Technology
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• 제55권7호
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• pp.2489-2497
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• 2023

Co and Eu impurities in the SSCs are nuclides that dominantly influence the neutron-induced radioactive inventory in metal and concrete radwastes (radioactive wastes) during NPP decommission. The impurity concentrations provided by NUREG/CR-3474 were used for the practical range of Co and Eu impurity concentrations to be applied to the code calculations. Metal structures near the core were evaluated to be ILW (intermediate-level waste) for the whole range of Co impurity concentration, so the boundary line between ILW and LLW (low-level waste) has no change for the whole concentration range provided by NUREG/CR-3474. Also, the boundary line between VLLW (very low-level waste) and CW (clearance waste) in the concrete shield could alter a little depending on the Eu impurity concentration within the range provided by NUREG/CR-3474. From this work, it is found that the concentration of material impurities of SSCs gives no critical impact on determining radwaste levels.

• 한국세라믹학회지
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• 제54권4호
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• pp.298-302
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• 2017

To investigate the influence of alkaline impurity K content on bubbles of quartz glass, samples were prepared based on $SiO_2$ sand with differing amounts of potassium hydroxide solution added by electric fusion. Bubble properties such as number, diameter and bubble fraction were determined using a stereoscopic microscope. The results of the observations indicated that an alkaline impurity content of 100 ppm had a good effect on bubble decline in quartz glass. The effect on OH was investigated by FTIR(Fourier transform infrared spectroscopy).

• 전자공학회논문지A
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• 제30A권11호
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• pp.99-104
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• 1993

We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.

• 마이크로전자및패키징학회지
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• 제31권2호
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• pp.9-15
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• 2024

칩 온 보드(chip on board) 패키지 적용을 위해 프리프레그(prepreg) 표면에 잔류하는 불순물이 봉지재(encapsulant)의 젖음성에 미치는 영향을 규명하기 위해 전자현미경(scanning electron microscope)과 X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 이용하여 미세구조, 조성 및 화학 결합을 분석하였다. 프리프레그 표면에 잔류 불순물이 존재하는 시편의 경우 잔류 불순물이 존재하지 않는 시편보다 접촉각이 28° 높게 측정되었으며, C-O 결합은 4% 낮게 도출되었다. 이는 공정 중 잔류 불순물인 Na, F이 프리프레그 표면에 존재하는 C와 화학 반응을 하여 C-F 결합 생성으로 인해 프리프레그 표면의 C-O 결합이 끊어지면서 프리프레그 표면에너지가 낮아지게 되고 이로 인해 접촉각이 증가하게 되면서 봉지재의 젖음성이 저하되는 것으로 판단된다.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권1호
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• pp.18-22
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• 2005

We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

• 대한전자공학회논문지
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• 제23권6호
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• pp.929-935
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• 1986

In this paper, we describe the physical modelling and numerical aspects of a program called PRECISE(Program for Efficient Calculation of Impurity Profile in Semiconductor by Elimination) which calcualtes a two-dimensional impurity profile in silicon due to diffusion and ion implantation steps. The PRECISE enables rapid prediction of the two-dimensional impurity profile near the mask edge-or the bird's beak during the local oxidation process. This has been developed by modifying the existing one-dimentional simulator, DIFSIM(DIFfusion SIMulator to include models for arsenic diffusion and emitter dip effect which were found out to agree fairly well with the xperimental data.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.99-102
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• 2003

The electronic structure of ${\beta}-MnO_2$ having impurities in the site of Mn was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}MO_{56}]^{-52}$ (M = transient metals). Madelung potential and spin polarization were considered for more exact calculations. As results of calculations, the energy levels of all electron included in the model were obtained. The energy band gap and positions of impurity levies were discussed in association with impurity 34 orbital that seriously affect electrical properties of $MnO_2$. It was shown that the energy band gap decreased with the increase of the atomic number of transient metal impurity.

• 한국진공학회지
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• 제13권1호
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• pp.22-28
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• 2004

본 논문은 탄탈 박막의 증착시 음의 기판 바이어스에 의한 탄탈 박막내의 불순물 농도변화에 대해서 고찰하였다. 탄탈 박막은 실리콘 기판 위에 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -125 V의 기판 바이어스를 건 상태에서 증착하였다. 탄탈 박막내의 불순물 농도를 관찰하기 위해서 이차이온 질량분석기(secondary ion mass spectrometry)를 이용하였다. 세슘 클러스터 이온에 의한 깊이분석에서, -125 V의 기판 바이어스를 걸어줌으로써 산소, 탄소, 그리고 실리콘 불순물의 농도가 기판 바이어스를 걸지 않은 경우에 비해 상당히 감소한 것을 알 수 있었다. 또한, 세슘 이온빔과 산소 이온빔을 이용한 전체 불순물의 농도분포에서도, 음의 기판 바이어스가 박막 증착시 각각의 불순물 농도에 영향을 준다는 결과를 얻었고 이에 대한 고찰을 하였다.