• 한국결정성장학회지
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• 제7권1호
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• pp.143-150
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• 1997

본 연구는 수소로 희석된 $B_2H_6$를 도판트 소스 가스로 사용하여 이온 질량 주입(ion mass doping)을 하였을 때 다결정 박막의 전기적 특성과 도판트의 활성화시 방사 손상(radiation damage)의 효과에 대하여 고찰하였다. 다결정 박막에서 보론(boron)의 SIMS 분석과 컴퓨터 시뮬레이션인 TRIM92를 비교해서 가장 주입 확률이 높은 이온의 종류는 $B_2H_x\;^+$(x=1, 2, 3‥‥) 형태의 분자 이온임을 알았다. 높은 에너지의 질량 이온 주입 결과 시간에 따라 변화하는 비정질화된 층의 분율이 다결정 박막 내에 연속적인 비정질 충으로 존재하였다. 주입 이온의 질량 분리가 일어나지 않는 이온 질량 주입법(ion mass doping technique)에 의해 비정질화는 유발된다. 손상된 시편의 중간 열처리 온도 범위에서 도판트 활성화 거동과 역 열처리(reverse annealing) 효과가 관찰되었다. 이와 같은 연구의 결과 p-채널 다결정 박막 트랜지스터의 오프 스테이트(off-state) 전류는 방사 손상(radiation damage)에 의존한다.

• 한국결정성장학회지
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• 제8권2호
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• pp.299-306
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• 1998

비정질 규소가 결정질로 되기 위해서는 활성화가 필요하다. 이 활성화는 레이저 및 로내에서의 열처리로 열에너지를 가하면 달성될 수 있다. 이때 이 열에너지 외에 기계적 에너지 등을 가하면 활성화에 도움이 될 수 있을 것이다. 본 연구에서는 습식연마와 자기이온주입 등의 방법으로 기계적 손상을 주어서 이것이 LPCVD로 증착된 비정질 규소 박막의 결정화에 미치는 영향을 조사하였다. 결정성 확인을 위해서는 XRD와 라만분석법을 사용하였다. 본 연구의 결과, 기계적 손상이 비정질 규소 박막의 결정화를 증진시키는 것을 확인하였다.

• Earthquakes and Structures
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• 제15권6호
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• pp.701-713
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• 2018

Many bridges in Algeria were constructed without taking into account the seismic effect in the design. The implantation of a new regulation code RPOA-2008 requires a higher reinforcement ratio than with the seismic coefficient method, which is a common feature of the existing bridges. For better perception of the performance bridge piers and evaluation of the risk assessment of existing bridges, fragility analysis is an interesting tool to assess the vulnerability study of these structures. This paper presents a comparative performance of bridge piers designed with the seismic coefficient method and the new RPOA-2008. The performances of the designed bridge piers are assessed using thirty ground motion records and incremental dynamic analysis. Fragility curves for the bridge piers are plotted using probabilistic seismic demand model to perform the seismic vulnerability analysis. The impact of changing the reinforcement strength on the seismic behavior of the designed bridge piers is checked by fragility analysis. The fragility results reveal that the probability of damage with the RPOA-2008 is less and perform well comparing to the conventional design pier.

• Nuclear Engineering and Technology
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• 제54권6호
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• pp.1935-1946
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• 2022

The investigations of the coated-particles of nuclear fuel samples are carried out in three stages: front-end, irradiation in the reactor core, and post-irradiation examination. The front-end stage is the initial analysis of the failures rates of produced samples before they are placed in the reactor core. The purpose of the verification is to prepare the particles for an experiment that will determine the degree of damage to the coated particles at each stage. Before starting experiments with the samples, they must be properly prepared. Polishing the samples in order to uncover the inner layers is an important, initial experimental step. The authors of this paper used a novel way to prepare samples for testing - by applying an ion polisher. Mechanical polishing used frequently for sample preparations generates additional mechanical damages in the studied fuel particle, thus directly affecting the experimental results. The polishing methods were compared for three different coated particles using diagnostic methods such as Raman spectroscopy, scanning electron microscopy, and confocal laser scanning microscopy. Based on the obtained results, it was concluded that the ion polishing method is better because the level of interference with the structures of the individual layers of the tested samples is much lower than with the mechanical method. The same technique is used for the fuel particles undergone ion implantation simulating radiation damage that can occur in the reactor core.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.291.2-291.2
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• 2016

3D semiconductor material of silicon that is used throughout the semiconductor industry currently faces a physical limitation of the development of semiconductor process technology. The research into the next generation of nano-semiconductor materials such as semiconductor properties superior to replace silicon in order to overcome the physical limitations, such as the 2-dimensional graphene material in 2D transition-metal dichalcogenide (TMD) has been researched. In particular, 2D TMD doping without severely damage of crystal structure is required different conventional methods such as ion implantation in 3D semiconductor device. Here, we study a p-type doping technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of hydrochloric acid through Raman spectroscopy and electrical/optical measurements. Where the performance parameters of WSe2 - based electronic device can be properly designed or optimized. (on currents increasing and threshold voltage positive shift.) We expect that our p-doping method will make it possible to successfully integrate future layered semiconductor devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.421-424
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• 1998

In this paper are presented a newly proposed 3D monte carlo (MC) damage model for the dynamic simulation in order to more accurately and consistently predict the implant-induced point defect distributions of the various ions in crystalline silicon. This model was applied to phosphorus implants for the ULSI CMOS technology developement. In additon, a newly applied 3D-trajectory split method has been implemented into our model to reduce the statistical fluctuations of the implanted impurity and the defect profiles in the relatively large implanted area as compared to 1D or 2D simulations. Also, an empirical electronic energy loss model is proposed for phosphorus and silicon implants. The 3D formations of the amorphous region and the ultra-shallow junction around the implanted region could be predicted by using our model, TRICSI(Transport ions into crystal-silicon).

• 전자공학회논문지D
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• 제35D권7호
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• pp.94-101
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• 1998

To form 0.2 .mu.m p$^{+}$-n junctions, BF$_{2}$ ions with the energy of 20keV and the dose of 2*10$^{15}$ cm$^{-2}$ were implanted into the crystalline and preamorphized silicon substrates. Th epreamorphization was performed using 45keV, 3*10$^{14}$ cm$^{-2}$ As or Ge ions. Th efurnace annealing and rapid thermal annealing were empolyed to annihilate the implanted damage and to activate the implanted boron ions.The junction properties were analyzed with the measured values of the junction depth, sheet resistances, residual defects, and leakage currents. The thermal cycle of furnace annela followed by rapid thermal annela shows better characteristics than the annealing sequence of rapid thermal anneal and furnace annela.Among the premorphization species, Ge ion exhibited the better characteristics than the As ion.n.

• 전자공학회논문지D
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• 제35D권3호
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• pp.28-38
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• 1998

In our paper is reported a new 3D(dimensional) trajectory split approach with greatly improved efficiency for the Monte Carlo simulation of the 3D profiles of implanted ionand point defect concentrations in single-crystal silicon. This approach has been successfully implemented in our TRICSI Monte Carlo code. Combined with the previously developed model for damage accumalation in our TRICSI code, this model allows phasically based dynamic simulation of 3D profiles over an subsequent process simulation such as diffusion modeling and simulation. A typical time saving of over 10 timeshas been achieved for 3D simulation. Our method ensures much better region aground the implanted area. For 1-D simulation, the optimized condition for trajectory split has set to 3,000 pseudoparticles with 2 split branches.

• 의료법학
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• 제10권1호
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• pp.77-116
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• 2009

Owing to the development of Biotechnology, the involvement of humans in life before birth has been increasing. This means the need for the protection of unborn life takes on new importance. The respect for life and human beings which is based on fundamental constitutional principle should still be respected under civil law. This study examines how methods of respect for life are embodied in civil liability law. In particular, it enunciates the protection of unborn life within time-flow. Lastly, it studies the instruments of the civil liability law and the extent of protection for a fetus from the process of fertilization of an ovum by a sperm, development into an embryo and implantation. Especially, it looks into when and how the subject of the right changes. Besides, it critically scrutinizes the opinions of leading case lawyers and the Constitutional Court which conclude that, in order for a fetus to become the subject of Damage law, it is required to be born alive to comply with precedent. Furthermore, it suggests an alternative interpretation theory.