• Korean Journal of Materials Research
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• v.7 no.2
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• pp.107-113
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• 1997

$SrBi_{2}Ta_{2}O_{9}(SBT)$ thin films wcre prepared on $Pt/Ti/SiO_{2}/Si$ suhsrrate by pL~snia-enhanced chemical vapor deposition. Sr and Ta huhhling temperatures were kept ,it $120^{\circ}C$ Iron1 X- ray tiiffriict!on. n~icrostruc~ure. and composjrional analysis of SH7' films, respectivels Hi I~ut~t~lmg tempcl.arure was varied SR'I' thin tilrns dcpositcd ar i3i buhbling temperature of $130^{\circ}C$ have dielccrric constanr of 150 anti dissipation factor of 0 02 at IOOkFic. I .eakagc wrrent density of films was ahour $1.0{\times}10^{-8}A/cm^2$ at 20kV/cm. 1.eakage current i11amcrc1istic.s of Sli'l' films nras c.ontrolled by I'oole Frcnkel emission Kenianent polariziit~on and mercivc field oi SR\ulcorner' films annealed at $550^{\circ}C$ were $9{\mu}C/cm^2$ and 70kV/cm, respectively.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.331-340
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• 2008

A method of measuring the current and voltage is suggested in the circuit of cold cathode fluorescent lamps (CCFLs) which are driven at a high frequency of $50{\sim}100\;kHz$ and a high voltage of several kV. It is difficult to measure the current and voltage in the lamp circuit, because the impedance of the probe at high voltage side causes the leakage current and the variation of luminance. According to the analysis of equivalence circuit with the probe impedance and leakage current, the proper measuring method is to adjust the input DC voltage and to keep the specific luminance when the probe is installed at a high voltage circuit. The lamp current is detected with a current probe or a high frequency current meter at the ground side and the voltage is measured with a high voltage probe at the high voltage side of lamp. The lamp voltage($V_C$) is measured between the ballast capacitor and the lamp electrode, and the output voltage($V_I$) of inverter is measured between inverter output and ballast capacitor. As the phases of lamp voltage($V_C$) and current ($I_G$) are nearly the same values, the real power of lamp is the product of the lamp voltage($V_C$) by the lamp current($I_G$). The measured value of the phase difference between inverter output voltage($V_I$) and lamp current($I_G$) is appreciably deviated from the calculated value at $cos{\theta}=V_C/V_I$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.147-151
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• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.53-53
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• Archives of Pharmacal Research
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• v.11 no.2
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• pp.87-92
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• 1988

A number of substituted furodiketochroman derivatives ($lll_{a-f}$) have been synthesized by fusion of aromatic aldehydes with 5-hydroxybergapten and 5-hydroxyisopimpinellin. On the other hand, when the reaction was carried out in a solvent, the corresponding bis-furoccumarin derivatives ($lV_{c-n}$) were obtained. The anticoagulant effect of compounds $lll_{a,b,d}$ and $lv_{b,c,f,g,i,k}$ was tested. They failed to demonstrate any significant effect. The effect of the tested compounds on the arterial blood pressure was studied. Compounds $lV_c$, $lll_d$, $lll_b$, $lV_b$, $lV_k$ and $lV_i$ showed lowering effects on the normal systolic blooc pressure of anaesthetized rats in a decreasing manner.

• Journal of the Korean Chemical Society
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• v.6 no.1
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• pp.61-63
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• 1962

The polarographic behaviors of Tl(I) was investigated in EDTA and NTA as supporting electrolytes for determination of Tl(I). A base solution containing 0.005 % gelatine, 0.1 M EDTA, and 0.05 M NTA was used. The halfwave potential of Tl(I) determined is -0.495 V v.s. S.C.E. in 0.1 M EDTA at pH 4.1 and -0.520V v.s. S.C.E. in 0.05 M NTA at pH 6.3. In this paper, the effects of gelatine concentration and pH values was investigated. The half-wave potentials of common elements was determined and compared with the half-wave potential of Tl(I).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.137-140
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• 1993

Electrical properties and thermal annealing effects of $C_{22}$-quinolium(TCNQ) Langmuir-Blodgett(LB) films were studied. Typical current-voltage(I-V) characteristics along the perpendicular direction chow an anomalous behavior of breakdown near the electric-field strength of $10^{6}$V/cm. To see the thermal influence of the specimen, current was measured as a function of temperature(20∼$180^{\circ}C$). It shows that the current increases about 4 orders of magnitude near 60∼$70^{\circ}C$ and remains constant far a while up to ∼$150^{\circ}C$ and then suddenly drops. Such increase of current near 60∼$70^{\circ}C$ seems tn be related to a softness of alkyl chains. Besides the electrical measurements, UV/visible absorption(300∼800 nm) of the thermally annealed sample was measured to see the internal-structure change. It is found that there are four characteristic peaks. At 494 nm, the optical absorption of the thermally annealed specimen at $60^{\circ}C$ starts increase and stays almost constant upto∼ $140^{\circ}C$. And eventually it disappears above $180^{\circ}C$. After heat treatment of the specimen up to $150^{\circ}C$, Uv/visible absorption was measured while cooling.

• Journal of applied mathematics & informatics
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• v.24 no.1_2
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• pp.261-271
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• 2007

The symbol C($m_1^{n_1}m_2^{n_2}{\cdots}m_s^{n_s}$) denotes a 2-regular graph consisting of $n_i$ cycles of length $m_i,\;i=1,\;2,\;{\cdots},\;s$. In this paper, we give some construction methods of cyclic($K_v$, G)-designs, and prove that there exists a cyclic($K_v$, G)-design when $G=C((4m_1)^{n_1}(4m_2)^{n_2}{\cdots}(4m_s)^{n_s}\;and\;v{\equiv}1(mod\;2|G|)$.

• Honam Mathematical Journal
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• v.36 no.4
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• pp.913-919
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• 2014

We investigate the relationships between the space X and the hyperspaces concerning admissibility and connectedness im kleinen. The following results are obtained: Let X be a Hausdorff continuum, and let A, $B{\in}C(X)$ with $A{\subset}B$. (1) If X is c.i.k. at A, then X is c.i.k. at B if and only if B is admissible. (2) If A is admissible and C(X) is c.i.k. at A, then for each open set U containing A there is a continuum K and a neighborhood V of A such that $V{\subset}IntK{\subset}K{\subset}U$. (3) If for each open subset U of X containing A, there is a continuum B in C(X) such that $A{\subset}B{\subset}U$ and X is c.i.k. at B, then X is c.i.k. at A. (4) If X is not c.i.k. at a point x of X, then there is an open set U containing x and there is a sequence $\{S_i\}^{\infty}_{i=1}$ of components of $\bar{U}$ such that $S_i{\longrightarrow}S$ where S is a nondegenerate continuum containing the point x and $S_i{\cap}S={\emptyset}$ for each i = 1, 2, ${\cdots}$.

• Journal of the Korea Society of Computer and Information
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• v.21 no.9
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• pp.79-84
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• 2016

In this paper we consider the problem of finding the triplet (S,${\pi}$,f), where $S{\subseteq}V$, ${\pi}$ is a sequence of nodes in S and $f:V{\backslash}S{\rightarrow}S$ for a given complete graph G=(V,E). In particular, there exist two costs, $c^V_{uv}$ and $c^D_{uv}$ for $(u,v){\in}E$, and the cost of triplet (S,${\pi}$,f) is defined as $\sum_{i=1}^{{\mid}S{\mid}}c^V_{{\pi}(i){\pi}(i+1)}+2$ ${\sum_{u{\in}V{\backslash}S}c^D_{uf(u)}$. This problem is motivated by the integrated routing of the vehicle and drone for urban delivery services. Since a well-known NP-complete TSP (Traveling Salesman Problem) is a special case of our problem, we cannot expect to have any polynomial-time algorithm unless P=NP. Furthermore, for practical purposes, we may not rely on time-exhaustive enumeration method such as branch-and-bound and branch-and-cut. This paper suggests the simple heuristic which is motivated by the MST (minimum spanning tree)-based approximation algorithm and neighborhood search heuristic for TSP.