• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.303-303
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• 2010

비정질 실리콘 박막 태양전지의 수광부인 i-layer는 비정질의 특성 상 많은 defect을 함유하고 있다. 이러한 defect들은 빛에 의하여 생성된 전자정공 재결합에 있어서 주도적으로 작용하게 된다. $H_2$는 이러한 defect들의 생성을 줄여주어 박막의 특성을 향상시켜주는 것으로 알려져 있다. 본 논문에서는 비정질 박막 태양전지의 수광부로 사용되어지는 i-layer의 $H_2$ gas flow rate의 변화에 따른 태양전지의 특성을 simulation해 보았다. $H_2$는 1:0에 1:5까지 변화시켰고 그에 따른 태양전지의 QE, LIV, DIV 곡선을 통하여 특성을 알아보았다. 또한 추가적으로 i-layer의 두께에 따른 효율의 변화도 simulation해 보았다.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.189-194
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• 2014

In this study, from a new x-ray detector that combines a columnar CsI:Na scintillation layer with a photosensitive mercuric iodide layer was investigated. In this structure, X-rays are converted into visible light on a thick CsI:Na layer, which is then converted to electric charges in a thin $HgI_2$ bottom layer. The thin coplanar mercuric iodide films as a photosensitive converter requiring only a few tens of volts of bias, associated with a thick columnar coating of phosphor layer, were simulated and designed. The results of this research suggest that the new coplanar x-ray detector with a hybrid-type structure can resolve the following problems: high voltage from the a-Se, and low conversion efficiency from the indirect conversion method. The results of this research suggest that the new CsI:Na/$HgI_2$ x-ray detector with a double-layer type structure can resolve the following problems: high voltage from the direct conversion method, and low conversion efficiency from the indirect conversion method.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.204-204
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• 2003

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.15-23
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• 1998

Single crystalline I $n_{x}$G $a_{1-x}$ N thin film was grwon by MOCVD on (001) sapphire substrate for the blue light emitting devices. A good quality of I $n_{0.13}$G $a_{0.87}$N/GaN heterostructure grwon above 700.deg. C was confiremed by various characterization techniques of AFM, RHEED and DC-XRD. Through PL measurement at room temperautre for the Si-Zn co-doped I $n_{x}$G $a_{a-x}$N/GaN structure grwon at 800.deg. C to obtain blue wavelength emission, 460-470 nm and 425 nm emission peak were observed, which are believed to be from donor-to-acceptor pair transition and band edge emission of In/x/G $a_{1-x}$ N, respectively. The result of PL measurement of the undoped MQW I $n_{x}$G $a_{1-x}$ N layer at low temperature confirmed that the strong MQW peak was resulted by exciton from the GAN barrier and carrier of DA pair confined into the well layer.ll layer.yer.r.

• Journal of Sericultural and Entomological Science
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• v.31 no.1
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• pp.20-24
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• 1989

The purpose of this experiment was to obtain the basic information on heterosis and inbreeding depression of quantitative characters in the silkworm by diallel crosses of seven varieties differing widely in each character. Period of 5th instar cocoon weight, cocoon layer weight, cocoon layer ratio, boiling off ratio, raw silk percent, bave length, bave weight, bave size, weight of first molting larva and fourth molting larva were investigated. The results obtained were summarized as follows : The degrees of positive heterosis of cocoon weight and cocoon layer weight were higher. Period of 5th instar and boiling off ratio were negative heterosis. In F1 generation, cocoon weight and bave weight showed positive heterobeltiosis, while fifth instar-period, cocoon layer ratio and boiling off ratio showed negative heterobeltiosis in the F1 and F2 generation. Inbreeding depression was observed in cocoon layer ratio and boiling off ratio.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.8A
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• pp.640-647
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• 2009

IEEE 802.11i is an amendment to the original IEEE 802.11/b,a,g standard specifying security mechanism by stipulating RSNA for tighter security. The RSNA uses TKIP(Temporal Key Integrity Protocol) and CCMP(Counter with CBC-MAC Protocol) instead of old-fashioned WEP(Wired Equivalent Privacy) for data encryption. This paper describes a design of a communication security engine for IEEE 802.11i MAC layer. The design includes WEP and TKIP modules based on the RC4 encryption algorithm, and CCMP module based on the AES encryption algorism. The WEP module suffices for compatibility with the IEEE 802.11 b,a,g MAC layer. The CCMP module has about 816.7Mbps throughput at 134MHz, hence it satisfies maximum 600Mbps data rate described in the IEEE 802.11n specifications. We propose a pipelined AES-CCMP cipher core architecture, which has lower hardware cost than existing AES cores, because CBC mode and CTR mode operate at the same time.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.995-997
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• 2005

A plastic substrate for flexible display is developed. The gas barrier and optical properties of the substrate is improved through depositing silicon oxide/nitride layer and coating polymer layer on plastic film by sputtering process and wet coating process. Roll to roll processes will guarantee the productivity in the whole production process of the plastic substrate.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 1998.06a
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• pp.352-357
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• 1998

Conventional marketing research generally focuses on a single layer's benefit. A notable example is the consumer layer providing managers with partial market information to evaluate relevant strategies. As generally known, marketing management encounters complex supply and demand behaviors, thereby necessitation that a successful marketing strategy adopt multi-layer considerations, such as the consumer layer, channel-retailer layer, and marketing planner layer. In light of above situation, this study applies fuzzy theory and the analytic hierarchy process(AHP) technique to analyze the performances of marketing strategies under multi-layer benefits, In addition, conventional marketing research has difficulty in efficiently allocating the limited budget so that each desired criterion can be significantly enhanced by a group of events. Therefore, a weighting structure among the goal, layers, criteria, and strategies(i.e. a group of events) is also developed herein to trace the influential process and assist marketing managers in efficiently allocating resources(i.e.budget).

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.