• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.113-113
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• 1993

• Journal of the Korean Ceramic Society
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• v.13 no.3
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• pp.13-20
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• 1976

The magnetic properties, especially the magnetostriction, of ferroxplana $Zn_{1-x}$$M_X$Y(x=0.0, 0.2, 0.4, 0.6) were investigated at room temperature. In general, the Curie temperature and the permeability of ferroxplana $Zn_{1-X}$$Mn_X$Y increased while the amount of the other phase decrease with increased concentration of dopant $Mn^{2+} for $Zn^{2+}. The magnetostriction constnats K1, K2, K3 and K4 for ZnY were ＋0.3, -5.0, -4.3 and $-4.8{\times}$$10^{-6} while that for 4Zn^0.8$ $Mn^0.2$Y were ＋2.5, -5.4, -6.0 and $-3.4{\times}10^{-6}$, respectively.

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.254-255
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• 2001

No Abstract.See Full-text

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.285-289
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• 2015

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.214-220
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• 1998

ZnO varistors are characterized by the features of excellent nonlinearity and surge withstand capability. In this paper, in order to investigate the use of ZnO varistor as surge absorption device in low voltage, metal oxide material($TiO_2$) was selected as control material of grain growth. Samples of ZnO varistors were fabricated with varying the contents, and then the microstructures and V-I characteristics were measured. It was observed by SEM that the mean grain size increased with the increase of the additive. From the measurement of V-I characteristics, it was observed that according to the increase of the quantity of $TiO_2$ as additive, the operating voltage was lowered.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.428-432
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• 2015

Sintering and microwave dielectric properties of $Zn_{2-2x}Si_{1+x}O_4$ (x=0~0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=0 whereas $SiO_2$ was detected in that for x=0.05. The composition of $Zn_2SiO_4$ might be close to x=0.02, i.e., $Zn_{1.96}Si_{1.02}O_4$; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=0. For the specimens of $x{\geq}0.05$, the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.05, i.e., $Zn_{1.9}Si_{1.05}O_4$, sintered at $1,400^{\circ}C$ were 96.5%, 6.43, and 115,166 GHz, respectively.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.12-15
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• 2008

The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.238-244
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• 2007

Nano-sized ZnO crystals were successfully incorporated using ion exchange method in TMA-A zeolite synthesized by the hydrothermal method. The optimal composition for the synthesis of TMA-A zeolite was resulted in a solution of $Al(i-pro)_3$:2.2 TEOS:2.4 TMAOH:0.3 NaOH:200 $H_2O$. 0.3g of TMA-A zeolite and 5mol of $ZnCl_2$ solution were employed for the preparation of ZnO incorporated TMA-A zeolite. The ZnO incorporated TMA-A zeolite precursors, prepared from the process of mixing, stirring, centrifugal separation and drying, were calcined at temperatures from 400 to $600^{\circ}C$ for 3 h. The crystallization process of ZnO incorporated TMA-A zeolite was analyzed by X-ray diffraction (XRD). The Brunaur-Emett-Teller (BET) surface area of the ZnO incorporated TMA-A zeolite was measured. Subsequently, the morphology and the particle size depending on the temperature and time were observed using scanning electron microscopy(SEM), transmission electron microscopy(TEM) and particle size analyzer.

• Clean Technology
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• v.16 no.4
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• pp.292-296
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• 2010

We fabricated quantum dot sensitized solar cells(QDSSC) using PbS as a sensitizer and measured the solar energy conversion efficiency. After growing ZnO nanowires on the substrate by low temperature ammonia solution reaction, PbS QDs were deposited on ZnO nanowires by SILAR(Successive ionic layer adsorption and reaction) method. The morphology and crystallinity of PbS/ZnO nanowires were studied by SEM and XRD. In this study, the maximum conversion efficiency of QDSSC using PbS was 0.075% at one sun, which was lower than that of QDSSC using other sensitizers. The reasons it showed relatively low efficiency are i) the probability of type-I band gap arrangement between ZnO and PbS, ii) disturbance of electron migration by the various-sized PbS band gap, iii) stability dip by the chemical reaction of PbS QDs with electrolyte. To solve these problems, researches about controlling the size distribution of PbS and new type electrolyte would be needed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.