• Transactions of the Korean hydrogen and new energy society
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• v.23 no.5
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• pp.461-467
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• 2012

Multi-block sulfonated poly (arylene ether sulfone) (SPES) membranes were synthesized by post-sulfonation and its properties characterized. Two types of oligomers, F-terminated and OH-terminated telechelic oligomers, were synthesized by controlling the feed ratio of dihydroxyl- and difluoro-monomers. Their number of repeating unit (X and Y) was analyzed by GPC and $^1H$ NMR. Copolymerization with F-terminated and OH-terminated telechelic oligomers via nucleophilic aromatic substitution, gave high-molecular-weight multi-block PESs. Each block length was controlled to have different values with X5Y10, X10Y10, X20Y10 and X20Y20. Successful polymerization and its successful sulfonation was confirmed by GPC and $^1H$ NMR. RH dependence of proton conductivity of multi-block SPES membranes was comparable to that of Nafion 212 at high RH conditions.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.167-171
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• 2004

The electroless deposition of copper on the hydrogen-terminated Si(111) surface was investigated by means of attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy, scanning tunneling microscopy (STM), and energy-dispersive spectroscopy (EDS). The hydrogen-terminated Si(111) surface prepared was stable under air atmosphere for a day or more. It was found from ATR-FTIR that two bands centered at 2000 and 2260 $cm^{-1}$ appeared after the H-Si(111) surface was immersed in 40% $NH_4F$ solution containing 10 mM $Cu^{2+}$. On the other hand, STM image included the copper islands with a height of 5 nm and a diameter of 10-20 nm. The EDS data displayed the presence of copper, silicon and oxygen species. The results were rationalized in terms of the redox reaction of surface Si atoms and $Cu^{2+}$ ions in solutions, which are changed into $Si(OH)_x(F)_y$ containing $SiF_6^{2-}$ ions and neutral copper islands.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.4-5
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• 2010

The surface phonon is defined as a coherent vibrational excitation of surface atoms propagating along the surface. It is characterized by a phonon dispersion curves, which were extensively studied in 1990's using helium atom scattering and high-resolution electron-energy-loss spectroscopy (HREELS)[1].The understanding is mainly based on the theoretical framework of a classical bond model or cluster calculations. The recent sample preparation and first principles calculations open the naval way to deep insight for surface phonon problems. The surface phonon dispersion on the hydrogen-terminated Si(111)-($1{\times}1$) surface [H:Si(111)] is the typical system and already reported experimentally [2] and theoretically [3], although the understandingis incomplete. The sample contaminated by the oxygen atoms on the surface and the calculations were also classical. In this study, firstly, we have prepared an ultra-clean H:Si(111) surface [4] and measured the surface phonon dispersion curvesusing HREELS. Secondly, we have performed first-principles density functional calculations with the projector augmented wave functionals, as implemented in VASP, using generalized gradient approximations. We used aslab of six silicon layers and both top and bottom surfaces were terminated with hydrogen atoms. Finally, we have compared with the surface phonon dispersion of deuterium-terminatedSi(111)-($1{\times}1$) surface[5] and led to our conclusions. The Si-H stretching and the bending modes are observed at 258.5 and 78.2 meV, respectively. These energies are the same as the previously reported values [2], but the energy-loss peaks at the lower energy regions are dramatically shifted. Through this combination study, we have formulated the procedure of preparing ultra-clean H:Si(111)/D:Si(111), which was confirmed by HREELS vibrational analysis. The Si surface will be utilized for further nano-physics research as well as for the materials for nano-fubrication.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3279-3281
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• 1999

This paper describes a method of direct wafer bonding using surfaces activated by a radio-frequency hydrogen plasma. The hydrogen plasma cleaning of silicon in the RIE mode was investigated as a pretreatment for silicon direct bonding. The cleaned silicon surface was successfully terminated by hydrogen, The hydrogen-terminated surfaces were rendered hydrophilic, which could be wetted by Dl water rinse. Two wafers of silicon and silicon dioxide were contacted to each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in an $N_2$ atmosphere for 2 h. From the AFM results, it was revealed that the surface became rougher with the increased plasma exposure time and power. The effect of the plasma treatment on the surface chemistry was investigated by the AES analysis. It was shown that the carbon contamination at the surface could be reduced below 5 at %. The interfacial energy measured by the crack propagation method was 122 $mJ/m^2$ and 384 $mJ/m^2$ for RCA cleaning and hydrogen plasm, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.26-27
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• 2001

• Journal of Integrative Natural Science
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• v.2 no.1
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• pp.28-31
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• 2009

We describe the synthesis and characterization of silicon nanoparticles prepared by the soluton reduction of SiCl4. These reactions produce Si nanoparticles with surfaces that are covalently terminated. The resultant organic derivatized Si nanoparticles as well as a probable distribution of Water-soluble Si nanoparticles are observed and characterized by photoluminescence(PL) spectroscopy. This work focuses originally on the organic- and water-soluble silicon nanoparticles in terms of the photoluminescence. Further this work displays probably the first layout of hydrogen terminated Si nanoparticles synthesized in solution at room temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.159-159
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• 2008

• Journal of Industrial Technology
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• v.24 no.B
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• pp.59-64
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• 2004

GaAs thin films were grown epitaxially by MOCVD method on (001) GaAs substrate. And as a surfactant, Bi(bismuth) thin films were deposited on GaAs buffer layer by using TMBi(trimethylbismuth) source. In-situ reflectance difference spectroscopy(RDS) was used to monitor the surface reconstruction of GaAs and Bi thin films. As the results, under the exposure of TBAs(tertiarybuthylarsine) and hydrogen atmosphere, the surface reconstruction of GaAs was changed from As-rich c($4{\times}4$) to As-rich ($2{\times}4$), which was due to the adsoption and desorption of As dimers. The first bismuth surface related RDS signal was reported. At the deposition temperature of $450^{\circ}C$, Bi-terminated GaAs surface showed the RDS spectrum similar to that of Sb-terminated GaAs surface, possibly a ($2{\times}4$) surface. And Bi surface layers were rapidly evaporated with increasing the deposition temperature($550^{\circ}C$), finally becoming As-terminated ($2{\times}4$) surface.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.3
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• pp.307-315
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• 2023

The physical and chemical changes exhibited by high density polyethylene (HDPE) after treatment with hydrogen at a pressure of 90 MPa followed by rapid release of the hydrogen were studied. X-ray diffraction, differential scanning calorimetry, thermo gravimetric analysis, and attenuated total reflectance (ATR)-fourier transform infrared (FTIR) were used for this purpose. As a result, it was found that the degree of crystallinity of HDPE decreased after hydrogen pressure treatment, while the average thickness of lamellae that constitute the crystals and the melting temperature of the crystalline region actually increased. The decomposition temperature also increased by about 3℃. In addition, it was found that the hydrogen bonding network between -OH groups in the HDPE sample was strengthened and partial chain scission occurred. These cut chains were found to be terminated by oxidative degradation such as cross-linking between chains, -C=O, -C-O, and -CHO, or by the formation of -CH₃ at the chain ends, as confirmed by ATR-FTIR.

• Journal of the Korean institute of surface engineering
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• v.37 no.4
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• pp.215-219
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• 2004

We fabricated protein chip plates coated with silane carboxylate. The silane compound was immobilized by hydrogen bond and/or other chemical bonds on the surface of the plate. The plates were then prepared by binding $Ni^{2+}$ to surfaces terminated with silane carboxylate groups. The carboxylic acid surface was generated by chemical oxidation of the terminal double-bond functions of the silane-deposited layer. The $Ni^{2+}$ ions on the surface reacted readily to His-tagged proteins. A significant increase in His-tagged protein adsorption was achieved on the surface terminated with silane carboxylate with longer alkyl chain, suggesting better availability of these protein chip plates for proteomic studies.