• Title/Summary/Keyword: hydrogen plasma

Search Result 564, Processing Time 0.022 seconds

Characteristics of LPG fuel Reforming in Plasma Reformer for Hydrogen Production (수소 생성을 위한 플라즈마 개질기에서의 LPG 연료의 개질 특성)

  • Park, Yunhwan;Lee, Deahoon;Kim, Changup;Kang, Kernyong
    • Journal of the Korean Institute of Gas
    • /
    • v.17 no.6
    • /
    • pp.8-14
    • /
    • 2013
  • In this study, characteristics of the geometric design changes of plasma reformer for LPG fuelled vehicles were studied. To improve the yield of hydrogen, reformer 1st, and 2nd were designed. Secondary reformer compared to the primary reformer to increase the volume of the rear part of reformed gas having passed through the plasma and increased reaction time. To compare reforming results of two reformers, various experimental conditions such as, from partial oxidation to total oxidation conditions $O_2/C$ ratios, and total flow rate of 20, 30, 40, 50 lpm conditions, were varied. Results showed that with increasing $O_2/C$ ratios, LPG conversion rate increased, decreased hydrogen selectivity and hydrogen yield optimal point existed and secondary reformer 4.5 times larger than the primary reformer at the same flow rate to 4~14% increase in the yield of hydrogen.

Application of Thermal Plasma for Production of Hydrogen and Carbon Black from Direct Decomposition of Hydrocarbon (탄화수소의 직접분해로부터 수소와 카본블랙을 생성하기 위한 열플라즈마의 응용)

  • Lee, Tae-Uk;Nam, Won-Ki;Baeck, Sung-Hyeon;Park, Dong-Wha
    • Applied Chemistry for Engineering
    • /
    • v.18 no.1
    • /
    • pp.84-89
    • /
    • 2007
  • Direct decomposition of hydrocarbon (methane, propane) was studied using a thermal plasma to produce high purity hydrogen and carbon black. Thermodynamic equilibrium compositions were calculated based on the minimization of Gibb's free energy, and decomposition experiments were performed on the basis of calculation results. The purity of hydrogen was found to be depended strongly on the flow rate of hydrocarbon. The decomposition conditions for high purity hydrogen were investigated. The purity of hydrogen produced from methane decomposition was higher than that from propane. In the case of propane, it was investigated that by products such as methane, acetylene, and ethane etc., by radical recombination under thermal plasma were produced more than that of methane. Produced carbon blacks were characterized by material analyses, such as XRD, Raman spectroscopy, SEM, and particle size analysis. In both methane and propane decompositions, well-crystallized carbon blacks were produced and showed uniform and sphere-like morphologies. The size of carbon black synthesized from methane was observed to be smaller than that from propane.

Improvement of Plasma Reactor Performance for Hydrogen Generation

  • Pavel, Kostyuk;Park, J.Y.;Kim, J.S.;Park, S.H.;Kim, Y.C.;Jeong, M.G.;Lee, H.W.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.06a
    • /
    • pp.519-520
    • /
    • 2006
  • Research was performed to increase the efficiency of a plasma reactor for $H_2$ yield. In the preceding studies $H_2$ was increased by adding Ni as a transitional metal catalyst and $TiO_2$ as a photocatalyst. In these experiments, it was found that distilled water, discharge frequency, and electrode configuration had a significant impact on $H_2$ generation. A substantial amount of hydrogen yield was observed at 2 kHz of discharge frequency and 12 kV of applied voltage. Within this favorable discharge conditions, the weight rate of $TiO_2$ and Ni powders was investigated. Plasma phenomenon was measured by electrical, optical and acoustical devices. It was found that emitted light, electric current and acoustical signals acquired from the discharge demonstrated systematical correlation. Changing the electrode's configuration allowed discharge distribution along the perimeter of the electrode's tip, which increased the density of streamers and plasma energy loadings, as the value of inception voltage for the discharge propagation decreased.

  • PDF

A Study on the Pd-Ni Alloy Hydrogen Membrane using the Porous Nickel Metal Support (다공성 Ni 금속 지지체를 사용한 Pd-Ni 합금 수소 분리막 연구)

  • Kim Dong-Won;Um Ki-Youn;Kim Sang-Ho;Park Jong-Su
    • Journal of the Korean institute of surface engineering
    • /
    • v.37 no.5
    • /
    • pp.289-295
    • /
    • 2004
  • A dense palladium-nikel (Pd-Ni) alloy composite membrane has been fabricated on microporous nickel support mixed with submicron/micron nickel powder instead of mesoporous stainless steel support. Plasma treatment process is introduced as pre-treatment process instead of HCI activation. Pd-Ni alloy composite membrane prepared by electro plating was fairly a uniform and dense surface morphology. The membrane was characterized by permeation experiments with hydrogen and nitrogen gases at temperature 773 K and pressure 2.2 psi. The results showed that hydrogen ($H_2$) permeance was 27 ml/$\textrm{cm}^2$ㆍatmㆍmin and hydrogen/ nitrogen ($_H2$$N_2$) selectivity was 8 at 773 K.

Hydrogen Production for PEMFC Application in Plasma Reforming System (PEMFC용 플라즈마 개질 시스템의 수소 생산)

  • Yang, Yoon Cheol;Chun, Young Nam
    • Korean Chemical Engineering Research
    • /
    • v.46 no.5
    • /
    • pp.1002-1007
    • /
    • 2008
  • The purpose of this paper studied the optimal hydrogen production condition of plasma reforming system to operate the PEMFC. Plasma reforming reactor used with Ni catalyst reactor at the same time, So $H_2$ concentration increased. Also the WGS and PrOx reactor were designed to remove CO concentration under 10 ppm, because CO has effect on catalyst poisoning of PEMFC. The maximum $H_2$ production condition in plasma reforming system was S/C ratio 3.2, $CH_4$ flow rate 2.0 L/min, catalytic reactor temperature $700{\pm}5^{\circ}C$ and input power 900 W. At this time, the concentration of produced syngas was $H_2$ 70.2%, CO 7.5%, $CO_2$ 16.2%,$CH_4$ 1.8%. The hydrogen yield, hydrogen selectivity and $CH_4$ conversion rate were 56.8%, 38.1% and 92.2% respectively. The energy efficiency and specific energy requirement were 37.0%, 183.6 kJ/mol. In additional, The experiment of $CO_2/CH_4$ ratio proceeded. Also WGS reactor experiment was proceeding on optimum condition of plasma reactor and the exit concentration were $H_2$ 68%, CO 337 ppm, $CO_2$ 24.0%, $CH_4$ 2.2%, $C_2H_4$ 0.4%, $C_2H_6$ 4.1%. At this time, experiment result of PrOx reactor were $H_2$ 51.9%, CO 0%, $CO_2$ 17.3%.

Plasma pretreatment of the titanium nitride substrate fur metal organic chemical vapor deposition of copper (Cu-MOCVD를 위한 TiN기판의 플라즈마 전처리)

  • Lee, Chong-Mu;Lim, Jong-Min;Park, Woong
    • Korean Journal of Materials Research
    • /
    • v.11 no.5
    • /
    • pp.361-366
    • /
    • 2001
  • It is difficult to obtain high Cu nucleation density and continuous Cu films in Cu-MOCVD without cleaning the TiN substrate prior to Cu deposition. In this study effects of plasma precleaning on the Cu nucleation density were investigated using SEM, XPS, AES, AFM analyses. Direct plasma pretreatment is much more effective than remote plasma pretreatment in enhancing Cu nucleation. Cleaning effects are enhanced with increasing the rf-power and the plasma exposure time in hydrogen plasma pretreatment. The mechanism through which Cu nucleation is enhanced by plasma pretreatment is as follows: Hydrogen ion\ulcorner in the hydrogen plasma react with TiN to form Ti and $NH_3$ Cu nucleation is easier on the Ti substrate than TiN substrate.

  • PDF

The effect of $Ar\;+\;H_2$ Plasma on the Low Temperature ITO Film Synthesized on Polymer (폴리머 기판상에 합성된 저온 ITO 박막에 미치는 $Ar\;+\;H_2$ 플라즈마의 영향)

  • Moon, Chang-S.;Chung, Yun-M.;Lee, Ho-Y.;Kim, Yong-M.;Kim, Kab-S.;Gaillard, M.;Han, Jeon-G.
    • Journal of the Korean institute of surface engineering
    • /
    • v.39 no.5
    • /
    • pp.206-209
    • /
    • 2006
  • Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at room temperature by pulsed DC magnetron sputtering. By the control of introducing hydrogen to argon atmosphere, the resistivity of ITO films was obtained at $5.27\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ without substrate heating in comparison with $2.65\;{\times}\;10{-3}\;{\Omega}{\cdot}cm$ under hydrogen free condition. ITO film synthesized at Ar condition was changed from amorphous to crystalline. These result from the enhancement of electron temperature in $Ar\;+\;H_2$ plasma, which induces the increase of ionization of target materials and argon. The dominant increase of ions such as In II and O II and neutral Sn I was monitored by optical emission spectroscopy (OES). Thermal energy required for the crystalline film formation is compensated by kinetic energy transfer through ion bombardments to substrate.

Effect of the Process Parameters on the Fe Nano Powder Formation in the Plasma Arc Discharge Process (플라즈마 아크 방전법에서 Fe 나노 분말 형성에 미치는 공정변수의 영향)

  • 이길근;김성규
    • Journal of Powder Materials
    • /
    • v.10 no.1
    • /
    • pp.51-56
    • /
    • 2003
  • To investigate the effect of the parameters of the plasma arc discharge process on the particle formation and particle characteristics of the iron nano powder, the chamber pressure, input current and the hydrogen volume fraction in the powder synthesis atmosphere were changed. The particle size and phase structure of the synthesized iron powder were studied using the FE-SEM, FE-TEM and XRD. The synthesized iron powder particle had a core-shell structure composed of the crystalline $\alpha$-Fe in the core and the crystalline $Fe_3O_4$ in the shell. The powder generation rate and particle size mainly depended on the hydrogen volume fraction in the powder synthesis atmosphere. The particle size increased simultaneously with increasing the hydrogen volume fraction from 10% to 50%, and it ranged from about 45nm to 130 nm.

Manufacturing of Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition Reactor and Si Wafer Surface Cleaning by Hydrogen Plasma (초고진공 전자 사이클로트론 공명 화학 기상증착장치의 제작과 수소 플라즈마를 이용한 실리콘 기판 표면 세정화)

  • 황석희;태흥식;황기웅
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.31A no.4
    • /
    • pp.63-69
    • /
    • 1994
  • The Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition(UHV-ECRCVD) system whose base pressure is 1${\times}10^{9}$ torr has been constructed. In-situ cleaning prior to the epitaxial growth was carried out at 56$0^{\circ}C$ by ECR generated uniform hydrogen plasma whose density is $10^{10}/cm{3}$. The natural oxide was effectively removed without damage by applying positive DC bias(+10V) to the substrate. RHEED(Reflection High Energy Electron Diffraction) analysis has been used to confirm the removal of the surgace oxide and the streaky 2$\times$1 reconstruction of the Si surface, and the suppression of the substrate damage is anaylized by X-TEM(cross-sectional Transmission Electron Microscopy). Surface cleaning technique by ECR hydrogen plasma confirmed good quality epitaxial growth at low temperature.

  • PDF

Characterization of microcrystalline silicon thin films prepared by layer-by-layer technique with a OECVD system

  • Kim, C.O.;Nahm, T.U.;Hong, J.P.
    • Journal of Korean Vacuum Science & Technology
    • /
    • v.3 no.2
    • /
    • pp.116-120
    • /
    • 1999
  • Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

  • PDF