• Korean Journal of Materials Research
• /
• v.12 no.4
• /
• pp.235-239
• /
• 2002

In this study mesh-type PECVD system was suggested to minimize the hydrogen concentration. The main structural difference between the triode system and a conventional system is that, a third electrode, a mesh, is inserted between the powered and the ground electrode. We investigated several conditions to compare with conventional PECVD. The main effect of mesh was to minimize the substrate damage by ion bombardment and to enhance the surface reaction to induce hydrogen desorption. It was also found that hydrogen concentration decreased but deposition rate increased as increasing applied bias. Applied DC-bia s enhanced sputtering process. Intense ion bombardment causes the weakly bonded hydrogen or hydrogen-containing species to leave the growing film and increased adatom mobility. Furthermore, addition of hydrogen gas enhance the surface diffusion of adatom.

• Journal of Hydrogen and New Energy
• /
• v.25 no.3
• /
• pp.305-310
• /
• 2014

This study examined the morphological changes in lithium surface immersed in 1mol $dm^{-3}$ (M) $LiPF_6 $ dissolved in propylene carbonate (PC) containing different 1,2-dimethoxyethane (DME) concentrations as a co-solvent. A passivation film was formed on the surface of lithium metal by electrolyte decomposition. The passivation film formation reactions were significantly affected by the amount of co-solvent, DME, in electrolyte solution. A stable film was obtained from the 1 M $LiPF_6 $ / PC:DME (67:33) solution in which lithium electrode showed good electrochemical performances. Atomic force microscope (AFM) and electrochemical impedance spectroscopy (EIS) results revealed that there were no direct correlations between changes in the surface morphology of lithium metal and the resistance behavior of its passivation film.

• Journal of the Korean Ceramic Society
• /
• v.30 no.9
• /
• pp.701-708
• /
• 1993

Pd-doped SnO2 thin films for hydrogen gas sensing were fabricated by reactive fo magnetron sputtering and were studied on effects of film thickness and Pd doping content. Pd doping caused the optimum sensor operation temperature to reduce down to ~25$0^{\circ}C$ and also enhanced gas sensitivity, compared with undoped SnO2 film. Gas sensitivity depended on the film thickness. The sensitivity increased with decreasing the film thickness, showing maximum sensitivities at the thickness of 730$\AA$ and 300~400$\AA$ for the undoped SnO2 and the Pd-doped SnO2 film, respectively. Further decrease of the film thickness beyond these thickness ranges, however, resulted in the reduction of sensitivity again.

• Korean Journal of Metals and Materials
• /
• v.49 no.2
• /
• pp.187-191
• /
• 2011

In order to obtain a suitable back contacting electrode for $Cu(InGa)Se_2$-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of $MoO_3$ powder. A $MoO_2$ thin film was successfully deposited on substrates by using the CVT of volatile $MoO_3(OH)_2$ at $550^{\circ}C$ for 60 min in a $H_2$ atmosphere. The Mo thin film was obtained by reduction of $MoO_2$ at $650^{\circ}C$ in a $H_2$ atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately $1{\Omega}/sq$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.228-231
• /
• 2002

We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

• Journal of the Korean Chemical Society
• /
• v.19 no.6
• /
• pp.420-422
• /
• 1975

The chemisorption of hydrogen and carbon monoxide, as well as the hydrogen titration of prechemisorbed oxygen was studied at $110^{\circ}$C on evaporated platinum and platinum-tungsten films. The results suggest that hydrogen titration of prechemisorbed oxygen may be used to determine the platinum surface area of platinum-tungsten film.

• Journal of the Korean Vacuum Society
• /
• v.5 no.1
• /
• pp.73-76
• /
• 1996

We have prepared hydrogenated amophous silicon (a-si : H) films with superlattice structure by hydrogen radical anneling(HRA) technique. We have studied the preparation of a-Si :H films by HRA and the optical & electronic characteristics. Optical band gap and the hydrogen contents in the a Si : H film is decreased as HRA time increased. We first report a -Si : H film prepared by periodicdeposition of a-Si : H layer and HRA have the superlattice structure using TEM . After 1 hour light soaking on the a-Si :H film prepared by HRA, there are no difference in the temperatre dependence of dark conductivity and the conductivity activation energy. An excellent stability for light in a-Si :H films by HRA can be explained using the long-range structural relaxation of the amorphous network and the propertiesof light -induced defects(LID) proposed by Fritzsche.

• Journal of Hydrogen and New Energy
• /
• v.1 no.1
• /
• pp.48-54
• /
• 1989

Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.119-126
• /
• 2001

Hydrogenated amorphous carbon (a-C:H) films were deposited by ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) method with deposition conditions such as ECR plasma source power, gas composition of methane and hydrogen, deposition time and substrate bias voltage. The hydrogen content in the films has been measured by ERDA (elastic recoil detection analysis) using 2.5 MeV $He^{++}$ ion beam. From the results of AES (Auger electron spectroscopy), RBS (Rutherford backscattering spectrometry) and ERDA, the composition elements of deposited film were confirmed the carbon atom and the hydrogen atom. It was observed by FTIR (Fourier transform infrared) that the hydrogen contents in the film varied according to the deposition conditions. In deposition condition of substrate bias voltage, the hydrogen contents were decreased remarkably because the amount of dehydrogenation in films was increased as the substrate bias voltage increased. In the rest deposition conditions, the hydrogen contents in the film were measured in the range 45~55%.

• Journal of Hydrogen and New Energy
• /
• v.10 no.4
• /
• pp.191-196
• /
• 1999

4-probe resistivity measurement technique was used to study hydrogen A-D(Absorption-Desorption)kinetics on Pd films(18 to 67nm thick) from 25 to $50^{\circ}C$, from 0 to 5 torr hydrogen pressure. Pd films were made on sapphire substrate by thermal evaporation technique under high vacuum at room temperature. Upto about 100 hydrogen A-D cyclings, no pulverization was observed, but film was detached partially from substrate. Forward reaction and backward reaction rate were analyzed separately. The activation energies of hydrogen A-D processes were obtained from the Arrhenius plot of the reaction rates. The activation energies of Pd films are not strongly dependent on the thickness of the film. But the activation energy of very thin film( l8nm thick) was smaller than the others.