• 한국진공학회지
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• 제6권S1호
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• pp.59-65
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• 1997

Efficient Si(100) etching by thermal H atoms at low substrate temperatures has been achieved. Gas-phase etching product $SiH_4$(g) upon H atom bombardment resulting from direct abstraction of $SiH_3$(a) by impinging H atoms was detected with a quadrupole mass spectrometer over the substrate temperature range of 105-408 K Facile depletion of all surface silyl ($SiH_3$) groups the dissociative adsorption product of disilane ($Si_2H_6$) at 105K from Si(100)2$\times$1 by D atoms and continuous regeneration and removal of $SiD_3$(a) were all consumed. These results provide direct evidence for efficient silicon surface etching by thermal hydrogen bombardment at cryogenic temperatures as low as 105K We attribute the high etching efficiency to the formation and stability of $SiH_3$(a) on Si(100) at lowered surface temperatures allowing the $SiH_3$(a) abstraction reaction by additional H atom to produce $SiH_4$((g).

• 전자공학회논문지A
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• 제33A권12호
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• pp.83-89
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• 1996

The electrochemical spike oscillations at the nickel (Ni) electrode/(0.05M KHC$_{8}$H$_{4}$O$_{4}$) buffer solution (pH 9) interface have been studied using voltammetric and chronoamperometric methods. The nature of the periodic cathodic current spikes is the activation controlled currents due to the hydrogen evolution reaction and depends onthe fractioanl surface coverage of the adsorbed hydrogen intermediate or the cathodic potential. There is two kinds of the waveforms corresponding to two kinds of the cathodic current spike oscillations. The widths, periods, and amplitudes of the cathodic current spikes are 4 ms or 5ms, 151 ms or 302 ms, and < 30 mA or < 275 mA, respectively. The fast discharge and recombination reaction steps are 1.5 times and twice and faster than the slow discharge and recombination reaction steps. The fast and slow discharge and recombination reaction steps are 1.5 times and twice faster than the slow discharge and recombination reaction steps. The fast and slow discharge and recombination reactions corresponding to the fast and slow adsorption sites at the Ni cathode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.79-79
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• 2010

The electronic and adsorption structure of O-Phthaladehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface. Through the spectral analysis, we will demonstrate 1-D directional formation of OPA on H-Si(100) surface using NEXAFS and HRPES.

• 한국수소및신에너지학회논문집
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• 제21권3호
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• pp.220-226
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• 2010

The heat transfer performance improvement in closed cooling water system of an electric power generation can be achieved by a corrosion control using corrosion inhibitors. The effect of trisodium phosphate and sodium nitrite upon carbon steel at various $Cl^{-1}$ ion containing water concentrations was examined by an integrated corrosion monitoring system. Nitrite was found to be the most effective inhibitor among tested inhibitors for carbon steel. The inhibiting process is considered as adsorption of nitrite ions in oxide layer which form a passive film on the carbon steel surface.

• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1091-1097
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• 2014

Tageteserecta flower like zinc oxide nanostructures composed of hexagonal nanorods were synthesized via sonochemical method at room temperature. The synthesized nanomaterials exhibited wurtzite hexagonal phase structure with the single crystalline nature. The diameter of the individual nanorods that constitute the flower shaped zinc oxide structures is in the range of 120-160 nm. The sonication time effectively determined the morphological properties of the prepared materials. The catalytic activity of prepared zinc oxide nanostructures towards N-formylation reactions were evaluated without any surface modification and the nanostructures exhibited good reaction yield with the prompt recyclability behavior.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.249-249
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• 2010

The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

• 한국진공학회지
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• 제3권1호
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• pp.17-25
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• 1994

장전자 방출법을 이용하여 Kink 또는 loosely closed pack의 텅스텐 결정면(310) (221) (211) 의 수소흡착에 대한 일함수의 변화를 측정하고 상대 흡착율을 주입량과 일함수의 변화로 결정할 수 있는 방법을 제시 하였다. 또한 (310)면과 (221)면에 대한 수소의 heat of desorption을 측정하였으며 초고진 공 장치내에서 팔라듐의 수소 source로서의 가능성을 확인하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1829-1832
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• 2008

This paper reports a novel gas sensing method by using a thermoelectric device, thermopile in this case, with an embedded tin oxide catalyst. By using a thin catalyst film, the response time and recovery time were remarkably improved. The fabricated gas sensor was characterized through detecting NOx gas with various concentrations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.169-169
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• 2002

• 전기화학회지
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• 제3권1호
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• pp.25-30
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• 2000

다결정 Pt/0.1 M $H_2SO_4$수성 전해질 계면에서 중간주파수 구간의 위상이동 변화와 Langmuir흡착등온식 사이의 관계를 교류임피던스 방법 즉 위상이동 방법을 이용하여 연구 조사하였다. 제안된 계면등가회로는 전해질저항($R_S$), Faraday저항$(R_F)$, 흡착유사용량$(C_\varphi)$의 등가회로 요소($C_P$)의 직렬접속으로 구성된다 지연되는 위상이동$(\varphi)$은 음전위(E) 및 주파수(f)에 따르며, $\varphi=-tan^{-1}[1/2{\pi}f(R_s+R_F)C_p]$이다. 중간주파수(6Hz)에서 위상이동 변화$(\varphi\;vs.\;E)$는 Langmuir흡착등온식$(\theta\;vs.\;E)$의 결정에 적용할 수 있는 실험적인 방법이다. 다결정 $Pt/0.1\;M\;H_2SO_4$ 전해질 계면에서 수소의 흡착평형 상수(K)와 흡착표준자유에너지$({\Delta}G_{ads})$는 각각 $1.8\times10^{-4}$와 21.4kJ/mol이며 과전위 수소흡착(OPD H)에 기인한다.