• Journal of the Institute of Convergence Signal Processing
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• v.13 no.1
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• pp.39-43
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• 2012

60GHz band RF transceiver was made with the NRD waveguide structure for the point- to-point communication. A dielectric line that of comprising NRD waveguide was the milling process was not easy because a material gets soft, and also compression and expansion according to a temperature were serious, so this line was not suitable for the device in which the resonance characteristic was important. In addition, the thing for comprising amplification module was difficult in the NRD waveguide structure. In this paper, a way in which to overcome mentioned in upper part, the transceiver was made by below technology. Components in which the resonance characteristic was not important were made with the NRD waveguide hybrid IC, and components in which the resonance characteristic was important were made with waveguide. An amplifier packaged and modularizing the bare chip, it equipped at the NRD waveguide within. Manufactured transceiver communicated with FDD method, and it had 10dBm output power, and -60dBm minimum receive sensitivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.581-582
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• 2005

In order to apply the discharge plasma processing. to industrial areas, the control of the chemical reaction mechanism is necessary. The hybrid plasma reactor was designed for the effective treatment of wastewater and hazardous volatile organic substances. This plasma reactor was similar to the barrier discharge, and surface discharge on the dielectric surface was propagated to the water surface strongly for the heterogeneous chemical reaction at the interface between the working gas and the water surface. The discharge emission in this discharge reactor was mainly $N_2$ second positive band in the case of $N_2$ or air gas atmosphere, and intensities from OH radicals in Ar gas atmosphere were stronger than in $N_2$ or air gas atmosphere. From this result, it is necessary to apply Ar gas for the effective generation of OH radicals in this plasma reactor.

• Journal of the Korean Geotechnical Society
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• v.37 no.2
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• pp.5-17
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• 2021

The Moon has been an attractive planet as an outpost for deep space exploration since He-3 and water ice which can be used as energy resources were discovered. In-Situ Resource Utilization (ISRU) construction material fabrication method is required for sustainable space planet exploration. In this paper, the possibility of microwave sintering technology for construction material fabrication was evaluated using lunar regolith that can be easily collected from the Moon surface. Experimental assessment of the influence factors on microwave sintering was conducted using a hybrid sintering system for efficient processing. The heat distribution in the furnace was observed using thermal paper that is coated with a material formulated to change color when exposed to heat. Based on this result, sintered cylindrical KLS-1s with a diameter of 1 cm and a height of 2 cm were fabricated. Densities were measured for the sintered KLS-1s under rotating turntable conditions that have an effect of microwave dispersion. The more dielectrics were arranged, the more microwaves were dispersed reducing the heat concentration, and thus a uniformity of sintered KLS-1s was enhanced.