• 제목/요약/키워드: host spectrum

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Bebq2에 (pq)2Ir(acac)가 선택 도핑된 2-파장 유기발광다이오드 (2-Wavelength Organic Light-Emitting Diodes Using Bebq2 Selectively Doped with (pq)2Ir(acac))

  • 김민영;지현진;장지근
    • 한국재료학회지
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    • 제21권4호
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    • pp.212-215
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    • 2011
  • New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20${\AA}$ and 40${\AA}$ in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20${\AA}$-thick doped emitter is referred to as "D-1" and the device with a 4${\AA}$-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 $cd/m^2$ and 6620 $cd/m^2$, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.

Heterologous Expression of Human $\beta$-Defensin-1 in Bacteriocin-Producing Laetoeoeeus lactis

  • CHOI HAK JONG;SEO MYUNG JI;LEE JUNG CHOUL;CHEIGH CHAN ICK;PARK HOON;AHN CHEOL;PYUN YU RYANG
    • Journal of Microbiology and Biotechnology
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    • 제15권2호
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    • pp.330-336
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    • 2005
  • Lactococcus lactis A164 is a nisin Z-producing strain isolated from kimchi. Its antimicrobial spectrum has been found to be active against most Gram-positive bacteria tested, yet inactive against Gram-negative bacteria [3]. Accordingly, to overcome this drawback, the current study attempted to express human $\beta$-defensin-l (hBD-l), which kills both Gram-positive and Gram-negative bacteria in L. lactis AI64. When the hBD-l cDNA was introduced using a nisin Z-controlled expression cassette, the L. lactis A164 transformants grew very poorly, due to the bactericidal effect of the expressed hBD-l against the transformants. Therefore, a gene fusion system was designed to reduce the toxicity of the expressed heterologous protein against the host cells. As such, the hBD-l gene was fused to the DsbC- Tag of pET -40b(+), then introduced to L. lactis A 164. The transformants expressed an intracellular 35.6-kDa DsbC-hBD-l fusion protein that exhibited slight activity against the host cells, yet not enough to strongly inhibit the cell growth. To obtain the recombinant hBD-l, the DsbC-hBD-l fusion protein was purified by nickel-affinity column chromatography, and the DsbC-Tag removed by cleaving with enterokinase. The cleaved mature hBD-l exhibited strong bactericidal activity against E. coli JM109, indicating that the recombinant L. lactis A 164 produced a biologically active hBD-I. In addition, the recombinant L. lactis A 164 was also found to produce the same level of nisin Z as the wild-type.

Synthesis of rhombohedral-structured zinc germanate thin films and characteristics of divalent manganese-activated electroluminescence

  • Yoon, Kyung-Ho;Kim, Joo-Han
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.453-453
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    • 2010
  • In this study, zinc germanate ($Zn_2GeO_4$) thin films has been synthesized by using radio frequency magnetron sputtering and the divalent manganese-activated luminescence was characterized. X-ray diffraction patterns of the as-deposited $Zn_2GeO_4$:Mn films showed only a broad feature, indicative of an amorphous structure. Scanning electron microscopy images revealed that the as-deposited $Zn_2GeO_4$:Mn has a smooth surface morphology. The $Zn_2GeO_4$:Mn films were found to be crystallized by annealing in air ambient at temperatures as low as $700^{\circ}C$. The annealed $Zn_2GeO_4$:Mn possessed a rhombohedral polycrystalline structure. The broad-band photoluminescent emission spectrum from 470 to 650nm was obtained at room temperature from the $Zn_2GeO_4$:Mn films. The emission peak was centered at around 535nm in the green range, which originates from the intrashell transition of manganese $3d^5$ electrons from $^4T_1$ excited-state level to the $^6A_1$ ground state. The PL emission spectrum had an asymmetric line shape, which results from the $^3d_5$ electron transitions of divalent manganese ions located at different sites of the zinc germanate host crystal lattice. Electroluminescent devices were fabricated using $Zn_2GeO_4$:Mn as an emission layer. The fabricated devices showed a green EL emission similar to the PL emission. The CIE chromaticity color coordinates of the EL emission were determined to be x=0.308 and y=0.657.

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Luminescence of $Eu^{3+}$ and $Sm^{3+}$ Doped Potassium Tungstate Phosphor

  • Lee, Gwan-Hyoung;Kim, Tae-Hyung;Kang, Shin-Hoo
    • Journal of Information Display
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    • 제6권2호
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    • pp.25-29
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    • 2005
  • The luminescent properties of $Eu^{3+}$ and $Sm^{3+}$ doped potassium tungstate phosphor are investigated. The $K_{4-3x}(WO_4)_2:Eu^{3+}\;_x,Sm^{3+}\;_y$ phosphor is produced by firing the mixed precursors, followed by re-firing with a flux. The re-firing process results in the defect-free surface and uniform growth of the particles. The strong absorption in the region of ultra violet light is observed due to the 4f-4f electron transitions of the $Eu^{3+}$ and $Sm^{3+}$ ions. The doping concentration of europium into potassium tungstate is relatively high, compared to other host materials. It is revealed that the crystal structure is a monoclinic with space group, C2/c. This crystal structure facilitated the $Eu^{3+}$ ions to be located with the Eu-Eu distance larger than 5 ${\AA}$ so that concentration quenching does not occur even at high doping concentration. The excitation spectrum could be adjusted by the introduction of the samarium. A small amount of the $Sm^{3+}$ ions that acts as a sensitizer increases the energy absorption peak around 405 nm.

EML에서 Ir(ppy)3와 CBP의 도핑 위치에 따른 녹색 인광 OLED 특성 변화 연구

  • 임기원;최병덕
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.229.2-229.2
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    • 2016
  • 본 연구에서는 Host와 Dopant $Ir(ppy)_3$의 도핑 위치 변화에 따른 bottom emission 인광 OLED를 제작하여 발광 효율 및 특성을 분석하였다. 소자의 EML은 $Ir(ppy)_3/CBP$$CBP/Ir(ppy)_3$ 순으로 증착하여 제작하였다. $Ir(ppy)_3/CBP$은 낮은 구동 전압에서 큰 전류밀도와 큰 luminance을 측정하였고, 반대로 $CBP/Ir(ppy)_3$은 높은 구동 전압에서 $CBP/Ir(ppy)_3$은 큰 전류밀도와 큰 luminance가 측정되었다. 이는 $Ir(ppy)_3/CBP$에서 HTL과 EML 사이에 hole direct injection이 발생으로 Hole이 증가하지만 charge balance 불일치로 roll-off가 발생하고, $CBP/Ir(ppy)_3$에서 electron direct injection에 의한 electron 증가로 charge balance가 향상된다. EL spectrum 측정에서 $Ir(ppy)_3$은 파장 512nm 발광이 일어나고, CBP와 NPB은 각각 파장 380nm, 433nm로 분석된다. 각 물질의 triplet의 전달은 energy level이 큰 곳에서 작은 곳으로 전달되는데 이러한 이유로 전압에 따른 recombination zone 변화로 각 물질에서 나오는 파장의 intensity가 달라지는 것을 확인하였다. $Ir(ppy)_3/CBP$은 낮은 전류 밀도에서는 CBP의 영향으로 380nm 파장대가 크고, 높은 전류 밀도에서는 $Ir(ppy)_3$의 영향으로 512nm 파장대가 크게 나오는 것을 확인했고, $CBP/Ir(ppy)_3$에서는 낮은 전류 밀도에서 512nm 파장대가 커지고, 큰 전류 밀도에서는 CBP에서 NPB로의 triplet 에너지 전달의 증가로 433nm 파장대가 커지는 것을 확인하였다.

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Response of Commercial Cotton Cultivars to Fusarium solani

  • Abd-Elsalam, Kamel A.;Omar, Moawad R.;El-Samawaty, Abdel-Rheem;Aly, Aly A.
    • The Plant Pathology Journal
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    • 제23권2호
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    • pp.62-69
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    • 2007
  • Twenty-nine isolates of Fusarium solani, originally isolated from diseased cotton roots in Egypt, were evaluated for their ability to cause symptoms on four genetically diverse cotton cultivars. Analysis of variance showed highly significant variance among cultivars, and isolates as well as the isolate x genotype interactions were highly significant(p < 0.0001). Although most isolates showed intermediate pathogenicity, there were two groups of isolates that showed significant differences in pathogenicity on all four cultivars. None of the cultivars were found to be immune to any of the isolates. On all cultivars, there were strong significant positive correlations between dry weight and each of preemergence damping-off, survival, and plant height. Considering 75% similarity in virulence, two groups comprising a total of 29 isolates were recognized. Ninety-three percent of the isolates have the same pathogenicity patterns with consistently low pathogenicity, and narrow diversity of virulence. Isolates Fs4 and Fs5 shared the same distinct overall virulence spectrum with consistently high pathogenicity. There was no clear-cut relationship between virulence of the isolates based on reaction pattern on 4 cultivars and each of host genotype, previous crop, and geographic origin.

($Eu^{2+}$, $Nd^{3+}$를 도핑시킨 $BaAl_{2}O_{4}$ 형광체의 광학 및 장잔광특성 (Optical and Long After-Glow Characteristics of $Eu^{2+}$, $Nd^{3+}$ doped $BaAl_{2}O_{4}$ Phosphorescent Crystals)

  • 김정환;김병규;이동규
    • 한국응용과학기술학회지
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    • 제19권3호
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    • pp.174-180
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    • 2002
  • In recent days, the study of a new phosphorescent phosphor has been performed in order to overcome the defect of sulfide phosphor and increase the brightness and long after-glow characteristic of phosphorescent phosphor. Particularly, sulfide phosphor usually used is so chemically unstable that the study of oxide phosphors are processing. $Eu^{2+}$, $Nd^{3+}$ doped Ba-Al-O phosphors sintered at $600{\sim}1500^{\circ}C$ for 2hours had the PL emission spectrum and after-glow over $1200^{\circ}C$. In this system, as the mole concentration of alumina increases, emission bands of phosphors moved from 500nm to 380nm. The optimum concentration of flux was 5wt% and after-glow characteristics of phosphors were found at the host material molar ratio ($BaCO_{3}:Al_{2}O_{3}$), 1:1 and 1:3.

Device Characteristics of white OLED using the fluorescent and phosphorescent materials coupled with interlayer

  • Lee, Young-Hoon;Kim, Jai-Kyeong;Yoo, Jai-Woong;Ju, Byeong-Kwon;Kwon, Jang-Hyuk;Jeon, Woo-Sik;Chin, Byung-Doo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1437-1439
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    • 2007
  • We fabricated white organic light emitting device (WOLED) with the layered fluorescent blue material and phosphorescent green/red dye-doped materials. Addition of the non-doped phosphorescent host material between the fluorescent and phosphorescent light emitting layers provided the result of broadband white spectrum, with improved balance, higher efficiency, and lower power consumption. In our devices, there was no need of exciton-blocking layer between the each emission layer for the further confinement of the diffusion of excitons.

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$Zn_2AgGaSe_4$$Zn_2AgGaSe_4$ : $Co^{2+}$ 결정의 광학적 특성 (Optical properties of $Zn_2AgGaSe_4$ and $Zn_2AgGaSe_4$ : $Co^{2+}$ crystals)

  • 김형곤;김병철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 전문대학교육위원 P
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    • pp.10-12
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    • 1999
  • Optical properties of $Zn_2AgGaSe_4$ and $Zn_2AgGaSe_4$:$Co^{2+}$ crystals are investigated in the visible and near-infrared regions at 298K. The direct band gap at 298K is 1.630eV for the $Zn_2AgGaSe_4$ and 1.567eV for the $Zn_2AgGaSe_4$:$Co^{2+}$ crystals, respectively. In the optical absorption and PAS spectrum of the $Zn_2AgGaSe_4$:$Co^{2+}$, we observed five impurity absorption peaks at $4220cm^{-1}$, $5952cm^{-1}$, $12422cm^{-1}$, $12987cm^{-1}$ and $14184cm^{-1}$. These impurity absorption peaks are attributed to the electronic transitions between the split energy levels of $Co^{2+}$ ions with Td symmetry of $Zn_2AgGaSe_4$ host lattice. The crystal field parameter Dq, the Racah parameter B and the spin-orbit coupling parameter $\lambda$ are given by $442cm^{-1}$, $425cm^{-1}$ and $440cm^{-1}$, respectively.

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Micro Lens Array Film을 이용한 백색 OLED의 발광 특성 (Emission Characteristics of White Organic Light-Emitting Diodes Using Micro Lens Array Film)

  • 천현동;나현석;양재웅;주성후
    • 한국표면공학회지
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    • 제46권2호
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    • pp.93-97
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    • 2013
  • We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with co-doping and blue/co-doping emitting layer (EML) structures were fabricated using a host-dopant system. The total thickness of light-emitting layer was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir(acac)$ in UGH3, respectively. In case of co-doping structure, applying micro lens array film showed efficiency improvement from the current efficiency 78.5 cd/A and power efficiency 40.4 lm/W to the current efficiency 131.1 cd/A and power efficiency 65 lm/W and blue / co-doping structure showed efficiency improvement from the current efficiency 43.8 cd/A and power efficiency 22 lm/W to the current efficiency 69 cd/A and power efficiency 32 lm/W.