• 대한화학회지
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• 제30권3호
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• pp.327-332
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• 1986

유도결합 플라스마 공간내의 전자밀도를 측정하였다. 전자밀도의 측정시 유도결합 플라스마의 작동조건은, (1) 냉각기체만 사용할 때, (2) 냉각기체와 운반기체만을 사용할 때, (3) 보통의 작동조건은, 즉 에아로졸을 포함한 운반기체를 사용할 때, (4) 약 88%의 에아로졸을 제거시켰을 때, 그리고 (5) 과량의 리튬을 주입시켰을 때로서 분류하였다. 보통의 작동조건에서 플라스마의 낮은 부분에서는 전자밀도가 상당히 감소하여 플라스마내의 가장 전자밀도가 큰 곳보다 약 80배 감소하였다. 이온화 방해영향을 일으키는 알칼리금속을 과량으로 넣었을 때 전자밀도의 변화는 관찰되지 않았고 유도코일의 power를 증가시키면 전자밀도도 증가하였다.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2003년도 가을 학술논문집
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• pp.48-53
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• 2003

원자력발전소로부터 발생하는 비가연성 고체폐기물의 모사시료에 대해 플라즈마 토치를 이용하여 고온용융처리 시험을 실시하였다 실험은 AP-200L 공동형 플라즈마토치를 사용하여 콘크리트, 흙과 금속이 포함되는 혼합물에 대하여 약 50시간 정도 수행되었다. 처리속도, 토치의 노즐과 용융물 표면과 간격, 토치 회전속도, 토치가스 유속 그리고 용융로의 압력 등 몇몇 실험조건을 사전에 결정하였으며, 냉각수 온도, 배가스 온도, 토치출력변화 등 기본 파라메타를 측정하였다. 유리화된 시료는 SEM/EDS로 분석하였다.

• 한국세라믹학회지
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• 제50권5호
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• pp.326-332
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• 2013

In this study, we prepared yttria stabilized zirconia granules for thermal barrier coatings using a spray drying process. First, we characterized the properties of granules such as flow rate and packing density for utilizing the air plasma spray process. The flow rate and packing density data showed 0.732 g/sec and 2.14 $g/cm^3$, respectively, when we used larger and denser particles, which are better than hollow granules or smaller spherical granules. Second, we chose larger, spherical granules fabricated in alcohol solvent as starting powders and sprayed it on the bondcoat/nimonic alloy by an atmospheric plasma spray process varying the process parameters, the feeding rate, gun speed and spray distance. Finally, we evaluated representative thermal and mechanical characteristics. The thermal expansion coefficients of the coatings were $11{\sim}12.7{\times}10^{-6}/^{\circ}C$ and the indentation stress measured was 2.5 GPa at 0.15 of indentation strain.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.335-337
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• 1989

The Charcteristics of the HCD ion plating system for TiN coating was Investigated. 1-V curvet of the HCD ( hollow cathode discharge ), radiation temperatures of the Ta tube and the Ti pool and the electron density and the temperature of the generated plasma are shown. The preferred orientation and the micro-hardness of coatings performed by HCD process are studied.

• 대한화학회지
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• 제43권3호
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• pp.357-360
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• 1999

• Membrane and Water Treatment
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• 제1권1호
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• pp.83-92
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• 2010

To improve the antifouling characteristics of polypropylene hollow fiber microporous membranes in a submerged membrane-bioreactor for wastewater treatment, the surface-modification was conducted by Ar plasma treatment. Surface hydrophilicity was assessed by water contact angle measurements. The advancing and receding water contact angles reduced after the surface modification, and hysteresis between the advancing and receding water contact angles was enlarged after Ar plasma treatment due to the increased surface roughness after surface plasma treatment. After continuous operation in a submerged membrane-bioreactor for about 55 h, the flux recovery after water cleaning and the flux ratio after fouling were improved by 20.0 and 143.0%, while the reduction of flux was reduced by 28.6% for the surface modified membrane after 1 min Ar plasma treatment, compared to those of the unmodified membrane. Morphological observations showed that the mean membrane pore size after Ar plasma treatment reduced as a result of the deposition of the etched species; after it was used in the submerged membrane-bioreactor, the further decline of the mean membrane pore size was caused by the deposition of foulants. X-ray photoelectron spectroscopy and infrared spectroscopy confirmed that proteins and polysaccharide-like substances were the main foulants in the precipitate.

• 한국전기전자재료학회논문지
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• 제11권7호
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• pp.571-580
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• 1998

The numerical model that can describe the ignition of pseudospark discharge using hybrid fluid-particle(Monte Carlo )method has been developed. This model consists of the fluid expression for transport of electrons and ions and Poisson's equation in the electric field. The fluid equation determines the spatiotemporal dependence of charged particle densities and the ionization source term is computed using the Monte carlo method. This model has been used to study the evolution of a discharge in Argon at 0.5 torr, with an applied voltage if 1kV. The evolution process of the discharge has been divided into four phases along the potential distribution : (1) Townsend discharge, (2) plasma formation, (3) onset of hollow cathode effect, (4) plasma expansion. From the numerical results, the physical mechanisms that lead to the rapid rise in current associated with the onset of pseudospark could be identified.

• 한국표면공학회지
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• 제48권3호
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• pp.126-130
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• 2015

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition conditions of ${\mu}c-Si:H$ films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of ${\mu}c-Si:H$ film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality ${\mu}c-Si:H$ films becomes wider until $200^{\circ}C$. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.181-181
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• 2016

Hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films have attracted much attention as materials of the bottom-cells in Si thin film tandem photovoltaics due to their low bandgap and excellent stability against light soaking. However, in PECVD, the source gas $SiH_4$ must be highly diluted by $H_2$, which eventually results in low deposition rate. Moreover, it is known that high-rate ${\mu}c-Si:H$ growth is usually accompanied by a large number of dangling-bond (DB) defects in the resulting films, which act as recombination centers for photoexcited carriers, leading to a deterioration in the device performance. During film deposition, Si nanoparticles generated in $SiH_4$ discharges can be incorporated into films, and such incorporation may have effects on film properties depending on the size, structure, and volume fraction of nanoparticles incorporated into films. Here we report experimental results on the effects of nonoparticles incorporation at the different substrate temperature studied using a multi-hollow discharge plasma CVD method in which such incorporation can be significantly suppressed in upstream region by setting the gas flow velocity high enough to drive nanoparticles toward the downstream region. All experiments were performed with the multi-hollow discharge plasma CVD reactor at RT, 100, and $250^{\circ}C$, respectively. The gas flow rate ratio of $SiH_4$ to $H_2$ was 0.997. The total gas pressure P was kept at 2 Torr. The discharge frequency and power were 60 MHz, 180 W, respectively. Crystallinity Xc of resulting films was evaluated using Raman spectra. The defect densities of the films were measured with electron spin resonance (ESR). The defect density of fims deposited in the downstream region (with nonoparticles) is higher defect density than that in the upstream region (without nanoparticles) at low substrate temperature of RT and $100^{\circ}C$. This result indicates that nanoparticle incorporation can change considerably their film properties depending on the substrate temperature.

• 마이크로전자및패키징학회지
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• 제9권4호
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• pp.55-60
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• 2002

본 연구는 $580^{\circ}C$의 저온에서 ICPHFCVD(inductively coupled plasma hot filament chemical vapor deposition)를 이용하여 탄소나노튜브를 수직성장 시키는 것을 나타낸 것이다. 또한, 탄소나노튜브의 끝단에 존재하는 Ni-tip을 비성질 탄소같은 탄소질 물질등의 서로 다른 에칭특성에 기초하여 RF plasma를 이용하여 일회 공정으로 불순물을 정제하고, 고찰하였다. 정제된 이후의 탄소나노튜브는 속이 비어있는 다중벽 탄소나노튜브로 나타났으며, 성장된 탄소나노튜브는 외경과 내경은 50 nm와 25 nm였다. 또한, 탄소나노튜브의 graphite 층의 총수는 약 82개 층으로 구성되었으며, 층과 층간의 거리는 0.34nm였다. 그리고 TEM 관찰 결과, 탄소나노튜브 tip의 Ni촉매는 계속적인 에칭 공정에 의해 효과적으로 제거 되었다.