• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.305-306
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• 2009

In this study, we have invastigated the recombination zone in the blue phosphorescent organic light-emitting devices with various partially doped structures. The basic device structure of the blue PHOLED was anode / hole injection layer (HIL) / hole transport layer (HTL) / emittingvastigated the recombination zone in the blue layer (EML) / hole blocking layer (HBL) / electron transport layer (ETL) / electron injection layer (EIL) / cathode. After the preparation of the blue PHOLED, the current density (J) - voltage (V) - luminance (L) and current efficiency characteristics were measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.116-119
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• 1997

In this paper A double-layer organic electroluminescent(EL) device was fabricated using a TPD(N,N'-dipheny] -N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4.4'-diamine: aromatic diamine), as a hole-transport material and tris (8-hydroxy quinolinate) aluminum(Alq$_3$) as a an emiting material and its performance characteristics were investigated. structure of devices is ITO/TPD/Alq$_3$/Al. we have fabricated hole transport layer of two types. Doping material of Hole Transport material is Poly(methyl methacrylate)(PMMA) and PEI(Poly-Ether-Imide). Carrier injection from the electrodes to the doped PMMA and PEI layer through the dopants and concomitant electroluminescence from Alq$_3$were observed. Green emission with luminance of 40cd/m$^2$was achieved at a drive voltage of 30V

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.393-398
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• 2019

A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).

• 접착 및 계면
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• 제23권2호
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• pp.17-24
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• 2022

양자점은 수 나노미터 크기의 반도체 나노입자로 우수한 발광 특성 및 색순도, 간단한 밴드갭 조절의 장점 때문에 이를 발광원으로 사용한 양자점 디스플레이가 차세대 디스플레이로 주목받고 있다. 하지만 전하 주입 불균형 문제로 인해서 소자의 효율 및 안정성에 큰 문제가 발생하고 이를 해결하기 위한 많은 연구가 진행되었다. 본 논문에서는 전자 및 정공 수송층에 중간층을 삽입하여 양자점 디스플레이의 발광과 수명 특성을 향상시킨 연구와 정공 수송층의 구조 변화를 통해서 정공 수송 능력을 향상시킨 연구들에 대해서 소개하고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.927-930
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• 2001

We studied the electrical properties of Copper(II)-phthalocyanine (Cu-Pc) as a hole transport layer in organic light emitting devices (OLEDs). OLEDs were constructed with ITO/CU-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline) aluminum ( Alq$_3$) + 4- (Dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/Al. It was consisted of a thin DCM in Alq$_3$emission layer. We observed that the change of recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of Cu-Pc layer increased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.691-693
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• 2007

We report on a highly conductive and stable hole transporting layer comprising of N,N'-di(1- naphthyl)-N,N'-diphenylbenzidine $({\alpha}\;-NPD)$ doped with molybdenum oxide $(MoO_3)$. Compared to the reference device, the device with $MoO_3-doped$ hole transporting material exhibits higher conductivity and thermal stability. The temperature dependence of the current-voltage characteristics are studied for various $(MoO_3)$ doping concentration.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.814-816
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• 2009

We have investigated the effect of host on the device charactistics of green phosphorescent organic light emitting devices consising of mCP, CBP and TPBi. Electrons were confined within the device by inserting hole transport layer between the electro transport and the emitting layer. When the appropriate interlayers were added, the device with TPBI host layer performances were found to be dramatically enhanced, with current efficiency and lifetime of 18cd/A and 18hour.

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.89-92
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• 2017

The performance of three-layered organic light-emitting diodes (OLEDs) was investigated using TPD hole-transport and injection layers, Teflon-AF, and the electron-injection layer of $Li_2CO_3$ and LiF. The OLEDs were manufactured in a structure of TPD/$Alq_3$/LiF, TPD/$Alq_3$/$Li_2CO_3$, and AF/$Alq_3$/LiF using low-molecular organic materials. In three different three-layered OLEDs, it was found that the device with the TPD/$Alq_3$/LiF structure shows higher performance in maximum luminance, and maximum external quantum efficiency compared to those of the device with TPD/$Alq_3$/$Li_2CO_3$ and TPD/$Alq_3$/LiF by 35% and 17%, and 193% and 133%, respectively. It is thought that the combined LiF/Al cathode contributes to a reduced work function and improves an electrical conduction mechanism due to the electron injection rather than the hole transport, which then increases a recombination rate of charge carriers.

• 마이크로전자및패키징학회지
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• 제14권4호
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• pp.37-42
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• 2007

본 연구에서는 ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al의 구조를 갖는 고분자 유기발광다이오드를 제작하여 정공 주입층으로 사용되는 PEDOT:PSS의 두께 변화와 PVK 정공 수송층을 도입하여 ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al 구조를 갖는 고분자 유기발광 다이오드를 제작하여 정공수송층이 유기발광다이오드의 전기 광학적 특성에 미치는 영향에 대하여 조사, 비교하였다. 실험에 사용된 모든 유기물은 플라즈마 처리된 ITO/glass 기판위에 스핀 코팅법으로 도포하였다. 정공 주입층인 PEDOT:PSS 두께를 약 80 nm에서 50 nm로 감소한 경우 PLED 소자의 휘도는 약 $220cd/m^2$ 에서 $450cd/m^2$으로 크게 증가하였다. 이러한 결과는 정공 주입층의 두께가 감소할수록 ITO 전극에서 발생한 정공이 보다 쉽게 발광막으로 전달되기 때문이다. 또한 PVK 정공 수송층을 도입한 PLED소자에서 최대 전류밀도와 휘도는 $268mA/cm^2$ 와 $540cd/m^2$ (at 12V)의 값을 각각 나타내었다. PVK 정공 수송층이 도입되지 않은 소자에 비해 전류밀도는 약 14%, 휘도는 약 22%의 특성개선을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1401-1403
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• 2005

We present that the carrier balance can be improved by doping a hole transport layer of 4,4'- bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}$-NPD) with a hole blocking material of 2,9-dimethyl- 4,7-diphenyl-1,10-phenanthroline (BCP). The doping leads to disturb hole transport, which can enhance the balance of electron s and holes concentration in the emitting layer, aluminum tris(8 -hydroxyquinoline) (Alq3), resulting in enhanced electroluminescence (EL) quantum efficiency for the device with the doped ${\alpha}$-NPD.