• Structural Engineering and Mechanics
• /
• v.49 no.4
• /
• pp.427-448
• /
• 2014

At present, the time of easy oil and gas is over. Now, the largest part of fossil fuels is concentrated in the deepest levels of tectonic structures and in the sea shelves. One of the most cumbersome operations of their extraction is the bore-hole drilling. In connection with austere tectonic and climate conditions, their drivage every so often is associated with great and diversified technological difficulties causing emergencies on frequent occasions. As a rule, they are linked with drill string accidents. A key role in prediction of these situations should play methods of theoretical modelling. For this reason, there is a growing need for development and implementation of new numerical methods for computer simulation of critical and post-critical behavior of drill strings (DSs). In this paper, the processes of non-linear deforming of a DS in cylindrical cavity of a deep bore-hole are considered. On the basis of the theory of curvilinear flexible rods, non-linear constitutive differential equations are deduced. The effects of the longitudinal non-uniform preloading, action of torque and interaction between the DS and the bore-hole surface are taken into account. Owing to the use of curvilinear coordinates in the constraining cylindrical surface and a specially chosen concomitant reference frame, it became possible to separate the desired variables and to reduce the total order of the equation system. To solve it, the method of continuation the solution by parameter and the transfer matrix technique are applied. As a result of the completed numerical analysis, the critical states of the DS loading in the cylindrical channels of inclined bore-holes are found. It is shown that the modes of the post-critical deforming of the DS are associated with its irregular spiral curving prevailing in the zone of bottom-hole-assembly. The possibility of invariant state generation during post-critical deforming is established, condition of its bifurcation is formulated. It is shown that infinite variety of loads can correspond to one geometrical configuration of the DS. They differ each from other by contact force functions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.1
• /
• pp.74-80
• /
• 2009

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum($Alq_3$)/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of hole transport layer (TPD) materials using hole-size of crucible boat. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5{\times}10^{-6}$ Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of $2.5\;{\AA}/s$. When the deposition rate of TPD increased from 1.5 to $3.0\;{\AA}/s$, we studied the efficiency improvement of TPD using the hole-size of crucible is 1.0 mm. When the deposition rate of TPD is $2.5\;{\AA}/s$, we found that the average roughness is rather smoother, the luminous efficiency the external quantum efficiency is superior to the others. Compared to the two from the devices made with the deposition rate of TPD is $2.0\;{\AA}/s$ and $3.0\;{\AA}/s$, the external quantum efficiency was improved by four-times and two-times, respectively.

• Journal of Institute of Control, Robotics and Systems
• /
• v.14 no.4
• /
• pp.365-368
• /
• 2008

Feasibility test for radical reactions in organic light emitting diode(OLED) has been applied on OLED consisting of hole transport layer(HTL) and electron transport layer(ETL). Organic molecules such as 4,4',-Bis[N-(1-naphthyl)-N-phenylamino] biphenyl(NPD) and 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine(m-MTDATA) are chosen for hole transport layer(HTL) and Bathocuproine(BCP) for electron transport layer(ETL) in this study. Informations on energy and shape of frontier orbitals and data on radical reactions of simple aromatics from semiconductor($TiO_2$) photocatalysis have provided basis for determining feasibility for radical reactions in OLED. The outcome of our feasibility test would be useful in designing optimum molecule for organic layer with a view to extending the lifetime of OLED.

• Journal of Welding and Joining
• /
• v.35 no.2
• /
• pp.13-22
• /
• 2017

In laser full penetration welding process, full penetration hole(FPH) is formed as a result of force balance between the vapor pressure and the surface tension of the surrounding molten metal. In this work, a three-dimensional numerical model based on a conserved-mass level-set method is developed to simulate the transport phenomena during laser full penetration welding process, including full penetration keyhole dynamics. Ray trancing model is applied to simulate multi-reflection phenomena in the keyhole wall. The ghost fluid method and continuum method are used to deal with liquid/vapor interface and solid/liquid interface. The effects of processing parameters including laser power and scanning speed on the resultant full penetration hole diameter, laser energy distribution and energy absorption efficiency are studied. The model is validated against experimental results. The diameter of full penetration hole calculated by the simulation model agrees well with the coaxial images captured during laser welding of thin stainless steel plates. Numerical simulation results show that increase of laser power and decrease of welding speed can enlarge the full penetration hole, which decreases laser energy efficiency.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.12 no.4
• /
• pp.35-40
• /
• 1975

The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.2
• /
• pp.89-92
• /
• 2017

The performance of three-layered organic light-emitting diodes (OLEDs) was investigated using TPD hole-transport and injection layers, Teflon-AF, and the electron-injection layer of $Li_2CO_3$ and LiF. The OLEDs were manufactured in a structure of TPD/$Alq_3$/LiF, TPD/$Alq_3$/$Li_2CO_3$, and AF/$Alq_3$/LiF using low-molecular organic materials. In three different three-layered OLEDs, it was found that the device with the TPD/$Alq_3$/LiF structure shows higher performance in maximum luminance, and maximum external quantum efficiency compared to those of the device with TPD/$Alq_3$/$Li_2CO_3$ and TPD/$Alq_3$/LiF by 35% and 17%, and 193% and 133%, respectively. It is thought that the combined LiF/Al cathode contributes to a reduced work function and improves an electrical conduction mechanism due to the electron injection rather than the hole transport, which then increases a recombination rate of charge carriers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.5
• /
• pp.393-398
• /
• 2019

A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.61.2-61.2
• /
• 2015

In the past decades, green energy, such as solar energy, wind power, hydropower, biomass energy, geothermal energy, and so on, has been widely investigated and developed to solve energy shortage. Recently, organic solar cells have attracted much attention, because they have many advantages, including low-cost, flexibility, light weight, and easy fabrication [1-3]. Organic solar cells are as a potential candidate of the next generation solar cells. In this abstract, to improve the power conversion efficiency and the stability, the inverted polymer solar cells with various structures were developed [4-6]. The novel cell structures included the P3HT:PCBM inverted polymer solar cells with AZO nanorods array, with pentacene-doped active layer, and with extra P3HT interfacial layer and PCBM interfacial layer. These three difference structures could respectively improve the performance of the P3HT:PCBM inverted polymer solar cells. For the inverted polymer solar cells with AZO nanorods array as the electronic transportation layer, by using the nanorod structure, the improvement of carrier collection and carrier extraction capabilities could be expected due to an increase in contact area between the nanorod array and the active layer. For the inverted polymer solar cells with pentacene-doped active layer, the hole-electron mobility in the active layer could be balanced by doping pentacene contents. The active layer with the balanced hole-electron mobility could reduce the carrier recombination in the active layers to enhance the photocurrent of the resulting inverted polymer solar cells. For the inverted polymer solar cells with extra P3HT and PCBM interfacial layers, the extra PCBM and P3HT interfacial layers could respectively improve the electron transport and hole transport. The extra PCBM interfacial layer served another function was that led more P3HT moving to the top side of the absorption layer, which reduced the non-continuous pathways of P3HT. It indicated that the recombination centers could be further reduced in the absorption layer. The extra P3HT interfacial layer could let the hole be more easily transported to the MoO3 hole transport layer. The high performance of the novel P3HT:PCBM inverted polymer solar cells with various structures were obtained.

• Journal of Korea Society of Industrial Information Systems
• /
• v.10 no.2
• /
• pp.76-81
• /
• 2005

This research approached electrical characteristics of organic light emitting diodes getting into the spotlight by next generation display device. Basic mechanism of OLED's emitting is known as that electron by cathode of lower work function and hole by anode of higher work function are driven and recombine exciton-state being flowed in emitting material layer passing carrier transport layer In order to make many electron-hole pairs, we must manufacture device in multi-layer structure. There are Carrier Injection Layer(CIL), Carrier Transport Layer(CTL) and Emitting Material Layer(EML) in multi-layer structure. It is important that regulate thickness of layer for high luminescence efficiency and set mobility of hole and electron.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.724-726
• /
• 2004

Highly efficient blue organic light-emitting devices (OLEDs) utilizing the idea of copper phthalocyanine (CuPc)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl- 4,4'-diamine (NPB) composite hole transport layer (CPHTL) have been fabricated. The effect of inserting CPHTL upon the performance of blue OLEDs with 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) as the blue emitter has been investigated. Compared with the luminous efficiency of the standard blue device without CPHTL (1.33 cd/A), that of the device with 40:60 CuPc/NPB CPHTL has been increased by more than twice up to 2.96 cd/A with a Commission Internationale d'Eclairage (CIE) coordinates of(x = 0.15, y = 0.10) and a power efficiency of 1.46 lm/W (20 mA/$cm^2$) at 6.39 V. The increased device efficiency is attributed to an improved balance between hole and electron currents arriving at the recombination zone.