• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.929-932
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• 2014

We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.260-264
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• 2007

We have studied stability in organic light-emitting diode depending on buffer layer and cathode. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. An electron injection energy barrier into organic material is different depending on a work function of cathodes. Theoretically, the energy barriers for the electron injection are 1.2 eV, -0.1 eV, and 0.0 eV for Al, LiAl, and LiF/Al at 300 K, respectively. We considered the cases that holes are injected to organic light-emitting diode. The hole injection energy barrier is about 0.7 eV between ITO and TPD without buffer layer. For hole-injection buffer layers of CuPc and PEDOT:PSS, the hole injection energy barriers are 0.4 eV and 0.5 eV, respectively. When the buffer layer of CuPc and PEDOT:PSS is existed, we observed the effects of hole injection energy barrier, and a reduction of operating-voltage. However, in case of PVK buffer layer, the hole injection energy barrier becomes high(1.0 eV). Even though the operating voltage becomes high, the efficiency is improved. A device structure for optimal lifetime condition is ITO/PEDOT:PSS/TPD/$Alq_3$/LiAl at an initial luminance of $300cd/m^2$.

• 전기전자학회논문지
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• 제24권3호
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• pp.706-712
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• 2020

유기전기발광소자(Organic light diodes, OLEDs)의 전기발광특성을 향상시키기 위해, 본 논문에서는 용액 공정 정공주입층으로 신규 hexaazatrinaphthylene(HATNA) 유도체들을 도입한 고효율 녹색인광 OLED소자의 특성을 연구하였다. HATNA 유도체는 Indium Tin Oxide(ITO)의 일함수와 비슷한 낮은 the lowest unoccupied molecular orbital(LUMO) 에너지 준위를 가져 다른 개념의 정공주입 메커니즘을 보여주었다. HATNA 유도체를 hole injection layer(HIL)로 사용한 OLED소자들은 HTL로의 정공주입장벽을 효과적으로 감소시키고 발광층 내에 전자와 정공의 균형을 최적화 시켜 외부양자효율이 10.8%에서 15.6%로, 전류 효율은 34.3 cd/A에서 42.7 cd/A로 소자 효율이 크게 향상 되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1813-1818
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• 2006

We demonstrate a new approach to form gradient hole injection layer (HIL) in organic light-emitting diodes (OLEDs). Single spincoating of hole-injecting conducting polymer compositions with a perfluorinated ionomer results in gradient workfunction through the layer by self-organization, which lead to remarkably efficient single layer polymer light-emitting diodes (PLEDs) (${\sim}21$ cd/A). The device lifetime was significantly improved (${\sim50$ times) compared with the conventional hole injection layer, poly(3,4-ethylenedioxy-thiophene)/polystyrene sulfonate. This solution processed HIL also produced dramatically enhanced luminous efficiency (${\sim}34$ cd/A) in vacuum- deposited green fluorescent OLEDs while the vacuum deposited HIL gave the luminous efficiency of ${\sim}23$ cd/A in the same device structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.316-319
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• 2001

Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 $cd/m^{2}$ at 8 V

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.316-319
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• 2001

Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 cd/㎡ at 8 V

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1046-1049
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• 2004

The improvement in OLEDS performance is correlated with the surface chemical composition, hole injection and electron injection. In this study, a new hole injection material, HIL202(NPB derivatives), was synthesized and the devices with the structure of ITO/HIL202/NPB/$Alq_3$/Liq/Al were fabricated. The devices with a new hole injection material showed the improved current density, luminance and life time then the NPB or conventional hole injection material based OLEDs, due to the improved adhesion morphology between ITO surface and hole injection material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.309-310
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• 2006

We studied dielectric properties of OLEDs(Organic Light-emitting Diodes) depending on applied voltage (AC) of PTFE(Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (PTFE)/emitting layer, Alq3(Tris(8-hydroxyquinolibe) Alumin)/Al. PTFE is deposited 2 [nm] as rate of 0.2~03 [${\AA}/s$] and $Alq_3$ is deposited 100 [nm] as rate of 1.3~1.5 [${\AA}/s$] m high vacuum ($5{\times}10^{-6}$[torr]). In result of these studies, we can know dielectric properties of OLEDs. Impedance is decreased depending on applied voltage variation, dielectric loss showed peak in specified voltage and showed cole-cole plot of a specimen.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.