• Bulletin of the Korean Chemical Society
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• v.32 no.spc8
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• pp.3031-3038
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• 2011

Ion-coordinating ruthenium complexes [cis-Ru(dcbpy)(L)(NCS)$_2$, where dcbpy is 4,4'-dicarboxylic acid-2,2'-bipyridine and L is 1,4,7,10-tetraoxa-13-azacyclopentadecane, JK-121, or bis(2-(2-methoxy-ethoxy)ethyl) amine, JK-122] have been synthesized and characterized using $^1H$ NMR, Fourier transform IR, UV/vis spectroscopy, and cyclic voltammetry. The effect of $Li^+$ in the electrolyte on the photovoltaic performance was investigated. With the stepwise addition of $Li^+$ to a liquid electrolyte, the device shows significant increase in the photo-current density, but a small decrease in the open circuit voltage. The solar cell with a hole conductor, the addition of $Li^+$ resulted in a 30% improvement in efficiency. The JK-121 sensitized cells in the liquid and solid-state electrolyte give power conversion efficiencies of 6.95% and 2.59%, respectively, under the simulated sunlight.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.196.2-196.2
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• 2015

There are various issues fabricating the successful and efficient solar cell structures. One of the most important issues is band alignment technique. The solar cells make the carrier in their active region over the p-n junction. Then, electrons and holes diffuse by minority carrier diffusion length. After they reach the edge of solar cells, there exist large energy barrier unless the good electrode are chosen. Many various conductor with different work functions can be selected to solve this energy barrier problem to efficiently extract carriers. Tungsten oxide has large band gap known as approximately 3.4 eV, and usually this material shows n-type property with reported work function of 6.65 eV. They are extremely high work function and trap level by oxygen vacancy cause them to become the hole extraction layer for optical devices like solar cells. In this study, we deposited tungsten oxide thin films by sputtering technique with various sputtering conditions. Their electrical contact properties were characterized with transmission line model pattern. The structure of tungsten oxide thin films were measured by x-ray diffraction. With x-ray photoelectron spectroscopy, the content of oxygen was investigated, and their defect states were examined by spectroscopic ellipsometry, UV-Vis spectrophotometer, and photoluminescence measurements.

• International Journal of Precision Engineering and Manufacturing
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• v.4 no.4
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• pp.51-56
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• 2003

Generally, the build-up printed circuit board manufactured by a sequential process involving etching, plating, drilling, etc, which requires many types of equipments and long lead time. Etching process is suitable for mass production, however, it is not adequate for manufacturing a prototype in the development stage. In this study, we introduce a screen printing technology for prototyping a build-up printed circuit board. As for the material, photo/thermal curable resin and conductive paste are used for the formation of dielectric and conductor. The build-up structure is made by subsequent processes such as formation of a liquid resin thin layer, solidification by a UV/IR light, and via hole filling with a conductive paste. By use of photo curable resin, productivity is greatly enhanced compared with thermal curable resin. Finally, the basic concept and the possibility of build-up printed circuit board prototyping are proposed in comparison with the conventional process.

• Journal of the Korean Ceramic Society
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• v.16 no.4
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• pp.213-224
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• 1979

The present work was undertaken: (1) to determine if CaO-partially stabilized $ZrO_2$ prepared by Hot Petroleum Drying Method would show better ionic conductor as an oxygen sensor in molten metals than that prepared by Oxide Wet Mixing Method and than CaO-fully stabilized $ZrO_2$, and (2) to understand the nature of conduction mechanism of CaO-partially stabilized $ZrO_2$ by a comparison of measured electrical conductivity data with theory on defect structure of pure monoclinic $ZrO_2$ and fully stabilized cubic $ZrO_2$. The DC electrical conductivity was measured by 3-probe technique and the AC electrical conductivity by 2-probe technique as a function of temperature in the range 973-1373 K and oxygen partial pressure in the range 10-1-10-25Mpa. The results of the experiments were as follows: 1. CaO-partially stabilized $ZrO_2$ prepared by Hot petroleum Drying Method showed at T=1094-1285 K and $Po_2$=10-7-10-25 MPa a nearly ionic conduction with 4 times higher conductivity than that prepared by Oxide Wet Mixing Method. 2. High-oxygen pressure conductivity tends toward a Po_2^{+1/5}-Po_2^{+1/6}$dependence. An analysis of possible defect structures suggests that CaO-partially stabilized $ZrO_2$ has an anti-Frenkel defect in which singly or doubly ionized oxygen interstitials and defect electrons predominate at T=1094-1285 K and $Po_2$=10-1-10-7MPa. 3. The activation energy for pure electron hole-conduction and ionic conduction of CaO-partially stabilized $ZrO_2$ was found to be 130 KJ/mol at T=973-1373 K, $Po_2$=2, 127 10-2 MPa(air) and 153KJ/mol at T=1094-1285 K respectively.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.299-303
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• 2015

The electrolyte is an important component in determining the performance of Fuel Cells. Especially, investigation of the conduction properties of electrolytes plays a key role in determining the performance of the electrolyte. The electrochemical properties of Yttrium stabilized zirconia (YSZ) were measured to allow the use of this material as an electrolyte for solid oxide fuel cells (SOFC) in the temperature range of $700-1000^{\circ}C$ and in $0.21{\leq}pO_2/atm{\leq}10^{-23}$. A Hebb-Wagner polarization experimental cell was optimally manufactured; here we discuss typical problems associated with making cells. The partial conductivities due to electrons and holes for 8YSZ, which is known as a superior oxygen conductor, were obtained using I-V characteristics based on the Hebb-Wagner polarization method. Activation energies for holes and electrons are $3.99{\pm}0.17eV$ and $1.70{\pm}0.06eV$ respectively. Further, we calculated the oxygen ion conductivity with electron, hole, and total conductivity, which was obtained by DC four probe conductivity measurements. The oxygen ion conductivity was dependent on the temperature; the activation energy was $0.80{\pm}0.10eV$. The electrolyte domain was determined from the top limit, bottom limit, and boundary (p=n) of the oxygen partial pressure. As a result, the electrolyte domain was widely presented in an extensive range of oxygen partial pressures and temperatures.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.