• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1401-1403
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• 2005

We present that the carrier balance can be improved by doping a hole transport layer of 4,4'- bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}$-NPD) with a hole blocking material of 2,9-dimethyl- 4,7-diphenyl-1,10-phenanthroline (BCP). The doping leads to disturb hole transport, which can enhance the balance of electron s and holes concentration in the emitting layer, aluminum tris(8 -hydroxyquinoline) (Alq3), resulting in enhanced electroluminescence (EL) quantum efficiency for the device with the doped ${\alpha}$-NPD.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1381-1382
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• 2005

We report improved efficiency in blue electrophosphorescent organic light emitting diodes by introducing an interfacial exciton blocking layer between light emitting layer (EML) and hole transport layer (HTL). Iridium(III) bis [(4,6-di-fluorophenyl)- pyridinato -N,C2']picolinate (FIrpic) was used as blue phosphorescent dopant and JHK6-3 with carbazole and electron transporting group as host and also as the interfacial layer, resulting in drastic increase in quantum efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.512-515
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• 2009

We have fabricated blue phosphorescent organic light emitting diodes (PHOLEDs) using a 3,5'-N,N'-dicarbazole-benzene (mCP) host and iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$] picolinate (Flrpic) guest materials, The Flrpic was partially doped into the mCP host layer, for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs. The recombination of electrons and holes takes place inside the mCP layer adjacent to the mCP/hole blocking layer interface. The best current efficiency was obtained in a device with an emission layer structure of mCP (10 nm)/mCP:Flrpic (20 nm, 10%). The high current efficiency in this device was attributed to the confinement of Ffrpic triplet excitons by the undoped mCP layer with high triplet energy, which blocks diffusion of Ffrpic excitons to the adjacent hole transport layer with a lower triplet energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1018-1021
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• 2003

We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.306-307
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• 2015

유기태양전지의 대표적 Hole Transporting Layer(HTL)로는 전도성 고분자인 PEDOT:PSS이다. PEDOT:PSS는 약산성의 물질로 전극을 부식시켜 디바이스의 효율을 감소시키기 때문에 PEDOT:PSS를 대체하기 위한 Buffer층에 대한 연구가 활발히 진행되어지고 있다. PEDOT:PSS를 대체할 수 있는 Nickel Oxide(NiO) Buffer 층은 wide band-gab으로 Hole Transporting Layer와 Electron Blocking Layer 역할을 동시에 하여 디바이스의 효율을 향상시킬 수 있으며, 디바이스의 수명을 향상시킬 수 있다는 장점이 있다. NiO는 용액공정과 Sputter 증착 방법으로 형성할 수 있는데, 용액공정은 고온공정이 요구되어지고 Sputter 증착방법은 산화되기 쉬운 전극위에서는 전극의 손상을 발생한다. 본 연구에서는 이러한 단점을 해결하기 위해서 Ni을 Magnetron Sputter로 증착한 후 Ion Beam 처리를 통해 산화시켜 NiO 층을 형성하는 방법을 연구하였다. 본 연구에서 제안한 NiO형성 방법으로 유기태양전지를 제작하여 PEDOT:PSS를 Buffer층으로 사용한 태양전지와 Voc가 0.72 V로 유사하게 나와 NiO가 Buffer층으로 잘 형성된 것을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.139-139
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.165-167
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• 2007

The performance of polymer light emitting diode can be improved significantly by interfacial engineering on anode and/or cathode through adjusting the charge injection barriers for holes and electrons. Studies involve CFx and SAM modifications on ITO, thickness and delay time to baking of PEDOT:PSS, and electron injection/hole blocking layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.956-960
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• 2006

Deep-blue organic light-emitting diodes (OLEDs) with/without ultra-thin LiF layer inserted at the interface between hole-blocking and electron-transporting layers have been fabricated and investigated. The fundamental structures of the OLEDs are ITO/m-MTDATA/NPB/BCP/LiF (with/ without)/ $Alq_3/LiF/Al.Deep$ blue light emission with CIE coordinate of (0.15, 0.11) has been achieved for all devices. Further, by inserting LiF with thickness of 1nm at the interface between BCP and $Alq_3$ layer, the luminous efficiency as well as the power efficiency is much improved compared to that without. The enhancement of electron injection due to insertion of LiF may account for this improvement.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.780-783
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• 2002

We report very efficient white OLEDs consisting of a blue-emitting 4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}$-NPD), a hole-blocking layer of 2,9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) doped with red fluorescent dye of 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro- 1H, 5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2), and green-emitting tris(8-hydroxyquinoline) aluminum ($Alq_3$). The device with the structure of ITO/${\alpha}$-NPD (50 nm)/BCP:DCM2 (0.8 %, 4 nm)/$Alq_3$ (50 nm)/LiF (0.5 nm)/Al shows a white emission with the CIE coordinates (0.329, 0.333). The maximum luminance of 20,800 cd/$m^2$ is obtained at 15.4 V. The power efficiency is 2.6lm/W and the external quantum efficiency is 2.1 % at a luminance of 100 cd/$m^2$ at the bias voltage of 6 V.