• Macromolecular Research
• /
• v.14 no.3
• /
• pp.343-347
• /
• 2006

A novel, blue light-emitting polymer, poly(phenyl-9,9-dioctyl-9',9'dihexanenitrile)fluorene (PPFC6N), containing an alkyl and cyano group in the side chain, was synthesized by Suzuki polymerization and characterized. The polymer structure was confirmed by $^1H-NMR$. The number average molecular weight and the weight average molecular weight of the obtained polymer were 9,725 and 9,943 respectively. The resulting polymer was thermally stable with a glass transition temperature ($T_g$) of $93^{\circ}C$, and was easily soluble in common organic solvents such as THF, toluene, chlorobenzene and chloroform. The HOMO and LUMO energy levels of the polymer were revealed as 5.8 and 2.88 eV by cyclic voltammetry study, respectively. The ITO/PEDOT:PSS (40 nm)/PPFC6N (80 m)/LiF (1 nm)/Al (150 nm) device fabricated from the polymer emitted a PL spectrum at 450 nm and showed a real blue emission for pure PPFC6N in the EL spectrum. When t-butyl PBD was introduced as a hole blocking layer, the device performance was largely improved and the EL spectrum was slightly shifted toward deep blue. The device with PPFC6N containing t-butyl PBD layer showed the maximum luminance of 3,200 $cd/m^2$ at 9.5 V with a turnon voltage of 7 V.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.6
• /
• pp.17-23
• /
• 2000

In this study, we prepared red organic light-emitting-diode(OLED) with a fluorescent dye(Sq)-doped and inserted between emission and cathode layer 1,3-bis(5-p-t-butylphenyl)-1,3,4-oxadiazol-2-yl)benzene (OXD7) or/and tris(8-hydroxyquinoline) aluminum ($Alq_3$) layers for increasing electroluminescent(EL) efficiency. This inserting effect has been observed and EL mechanism characteristics have been examined. The hole transfer layer is a N,N'-diphenyl-N,N'-bis-(3-methyl phenyl)-1,1'-diphenyl-4,4'-diamine (TPD), and the host and guest materials of emission layer is $Alq_3$ and bis[1-methyl-3,3'-dimethyl-2-indorindiylmethyl] squaraine (Sq), respectively. For the inserting of $Alq_3$, emission efficiency increased. But we can not obtained highly pure red emission owing to the emission of inserting $Alq_3$ layer. The inserting of OXD7 makes hole block and accumulate. Because of increasing recombination probability of electron and hole, highly pure red color can be held. Simultaneously brightness characteristics and emission efficiency could improve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.267-270
• /
• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Transactions on Electrical and Electronic Materials
• /
• v.2 no.4
• /
• pp.15-18
• /
• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Journal of Korean Society of Water and Wastewater
• /
• v.12 no.1
• /
• pp.88-95
• /
• 1998

The Electron/Hole Pair is generated when the Activation Energy produces by Ultraviolet Ray illumination to the Semiconductor. And $OH^-$ ion produces by Water Photo-Cleavage reacts with Positive Hole. As a result, OH Radical acting as strong oxidant is generated and then Photocatalytic Oxidation Reaction occurs. The Photocatalytic Oxidation can oxidize the chlorophenol to Chloride and Carbon Dioxide easier, safer and shorter than conventional Water Treatment Process With the same degree of chlorination, the $Cl^-$ ion at para (C4) position is most easily replaced by the OH radical. And then, the blocking effect of $OH^-$ ion between the $Cl^-$ ions and $Cl^-$ ions at symmetrical location is easily replaced by the OH radical. For mono-, di-, tri-chlorophenols, there is no obvious difference in decomposition rate, decomposition efficiency and completeness of the decomposition reaction except for 2,3-dichloropheno, 2,4,5-, 2,3,4-trichlorophenol. The decomposition efficiency is higher than 75% and completeness of the decomposition reaction is higher than 70%. Therefore, continuous flow photocatalytic reactor is promising process to remove the chlorinated aromatic compounds which is more toxic than non-chlorinated aromatic compound.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.688-691
• /
• 2004

In this study, we synthesized a new red emitting material of a Red225 doped into $Alq_3$ (tris(8-quinolinolato)aluminum (III)) and fabricated white organic light-emitting diodes (OLEDs) with a simple device structure. With a blue emitting material of DPVBi (4,4'-bis(2,2'-diphenylvinyl)1,1'-biphenyl) that can transfer effectively both a hole and an electron, OLEDs with a narrow emission layer could be possible without a hole-blocking layer. Consequently, the driving voltage and stability of devices have been improved. The devices show the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.36, 0.35) at luminance of 2000 cd/$m^2$. The luminous efficiency is about 3.5 cd/A, luminance is about 12000 cd/$m^2$ and current density is about 350 mA/$cm^2$ at 12 V, respectively.

• Journal of the Korean Applied Science and Technology
• /
• v.17 no.3
• /
• pp.174-177
• /
• 2000

The effect of a-sexithiophene(${\alpha}-6T$) layers on the light emitting diode (LED) were studied. The ${\alpha}-6T$ was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of ${\alpha}-6T$ later thickness. The efficiency of the electroluminescence was proportional to the thickness of ${\alpha}-6T$ layer. The highest efficiency was observed 600A of ${\alpha}-6T$ later, which was about 1.5 times higher than that of device without ${\alpha}-6T$ later. The device with a-6T showed an operation voltage lowered by 2V. The ${\alpha}-6T$ layer can substitute hole blocking layer, and control charge injection properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.497-500
• /
• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.127-127
• /
• 2010

Owing to many advantages on indirect intersubband absorption from the hole miniband to the electron miniband based on the type-II band alignment in InAs/GaSb strained-layer superlattice (SLS), InAs/GaSb SLS infrared photodetector (SLIP) has emerged as a promising system to realize high-detectivity quantum photodetector operating up to room temperature in the spectral range of mid-infrared (MIR) to far-infrared (FIR). In particular, n-barrier-n (n-B-n) structure designed for blocking the majority-carrier dark current makes it possible for MIR/FIR dual-band SLIP whose photoresponse (PR) band can be exclusively selected by the bias polarity. In this study, we present the MIR and FIR photoresponse (PR) mechanism identified by dual-band PR spectra and photoluminescence (PL) profiles taken from InAs/GaSb SLIP. In the MIR/FIR PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion current, and a superposition of MIR-PR in the FIR-PR spectrum is explained by tunnelling of electrons activated in MIR-SLS. The effective FIR-PR spectrum decomposed into three curves for HH1, LH1, and HH2 has revealed the edge energies of 120, 170, and 220 meV, respectively, and the temperature variation of the MIR-PR edge energies shows that the temperature behavior of the SLS systems can be approximately expressed by the Varshni empirical equation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1070-1073
• /
• 2003

We have studied the characteristics of organic light-emitting diodes(OLEDs) with the PTFE buffer layer. The OLEDs have been based on the molecular compounds, N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1, 1'- biphenyl-4, 4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinoline) aluminum (III) ($Alq_3$) as an electron transport and the Polytetrafluoroethylene (PTFE) as a buffer layer. The devices of structure were fabricated ITO/PTFE/TPD(40nm)/$Alq_3$(60nm)/Al( 150nm) to see the effects of the PTFE buffer layer in organic EL devices. The thickness of the PTFE layer varied from 0.5 to 10[nm]. We were measured Current-Voltage-Luminance Characteristics and Luminance efficiency due to the variation of PTFE thickness. the PTFE layer was reported that helped to enhance the hole tunneling injection and effectively impede induim diffusion from the ITO electrode. We have obtained an improvement of luminance efficiency when the PTFE thickness is 0.5[nm] is used. The improvement of efficiency of is expected due to a function of hole-blocking of PTFE in OLEDs.