• 한국주조공학회지
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• 제10권5호
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• pp.399-407
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• 1990

The effect of thermal cycling and isothermal exposure on the high temperature microstructural stability of unidirectionally solidified $Al-CuAl_2$ eutectic composite has been studied. A coarsening procedures of lamellar eutectic structures were initiated at growth fault region because of diffusion through low angle boundary at this region. It was considered that thermally induced residual stresses produced by thermal cycling were high enough to increase the dislocation density in Al-rich matrix phase. However, it was also considered that dislocations generated by these high thermal stresses were annihilated at high temperature by stress relaxation. Consequently, the thermal cycling up to 1440 cycles between 20 and $520^{\circ}C$ did not affect the microstructural stability.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 추계학술대회 논문집
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• pp.40-43
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• 2008

High temperature polymer electrolyte membranes incorporating ionic liquids (ILs) in different polymers such as commercial fluorinated polymers, sulfonated polymers and recasted nafion have been developed. ILs based on imidazolium cation and different anions possess high ionic conductivity and good thermal stability and have been used in the present study. The membranes containing IL show conductivity ${\sim}10^{-2}S\;cm^{-1}$ above $100^{\circ}C$ under anhydrous conditions and are thermally stable up to $250-300^{\circ}C$. IL acts as a conducting medium in these electrolytes and plays the same role as played by water in fully hydrated nafion membranes. Due to high conductivity and good thermal stability, these membranes are promising materials for PEFCs at higher temperatures under anhydrous conditions.

• 한국건설순환자원학회논문집
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• 제3권4호
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• pp.374-381
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• 2015

화재에 대한 건축물의 내화성능 확보를 위해서는 온도가 상승하더라도 허용범위 이내로 제어하고 탈락이나 손상 등이 발생하지 않아야 한다. 이에 대한 대책으로 부재 외면에 내화모르타르로 마감을 하는 것이 가장 효율적인 방법이다. 내화 마감모르타르는 고온에서 강도변화가 작고 열적으로 안정하며 열전도율이 낮은 경량재료라면 효과적으로 성능발현이 가능할 것이다. 본 연구는 내화 마감모르타르 개발을 위한 연구로 비교적 내화성능이 우수한 플라이애시 및 메타카올린 기반의 알칼리 활성화 결합재와 펄라이트 및 유리 발포 경량골재의 고온 특성에 대해 검토하였다. 실험결과 열전도율이 낮고 고온에서 비교적 안정적인 특성을 발현하여 내화 마감모르타르로 적용이 가능할 것으로 판단된다.

• 한국세라믹학회지
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• 제53권2호
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• pp.178-183
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• 2016

Ferroelectric relaxor ceramics with $BaTiO_3-NaNbO_3-Bi(Mg_{1/2}Ti_{1/2})O_3$ ternary compositions (BT-NN-BMT) have been prepared by sol-gel powder synthesis and consequent bulk ceramic processing. Through the modified chemical approach, fine and single-phase complex perovskite compositions were successfully obtained. Temperature and frequency dependent dielectric properties indicated typical relaxor characteristics of the BT-NN-BMT compositions. The ferroelectric-paraelectric phase transition became diffusive when NN and BMT were added to form BT based solid solutions. BMT additions to the BT-NN solid solutions affected the high temperature dielectric properties, which might be attributable to the compositional inhomogeneity of the complex perovskite and resulting weak dielectric coupling of the Bi-containing polar nanoregions (PNRs). The temperature stability of the dielectric properties was good enough to satisfy the X9R specification. The quasi-linear P-E response and the temperature- stable dielectric properties imply the high potential of this ceramic compound for use in high temperature capacitors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.192-196
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• 2002

This paper describes on the fabrication and characteristics of a metal thin-film pressure sensor based on Cr strain-gauges for harsh environment applications. The Cr thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Cr thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21 $mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 한국재료학회지
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• 제17권6호
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• pp.298-302
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• 2007

The electrical properties and its stability of Zn-Pr-Co-Cr-Tb-based varistors were investigated for different sintering temperatures. As the sintering temperatures increased, the varistor voltage decreased in the range of $705.2{\sim}299.1$ V/mm, the nonlinear coefficient decreased in the range of $42.4{\sim}31.7$, and the leakage current was in the range of $1.0{\sim}1.7\;{\mu}A$. The stability of electrical characteristics increased with the increase of sintering temperature. The varistors sintered at $1350^{\circ}C$ marked the high electrical stability, with $%\Delta$ $V_{1mA}=+0.1%,\;%\Delta{\alpha}=+3.2%$, and $%{\Delta}I_L=+117.6%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C/24\;h$.

• 한국재료학회지
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• 제16권8호
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• pp.466-472
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• 2006

The electrical, dielectric properties, and its stability of ZPCCL-based varistors were investigated for different sintering temperatures in the range of $1230{\sim}1300^{\circ}C$. As the sintering temperatures increased, the varistor voltage decreased in the range of $777.9{\sim}108$ V/mm, the nonlinear coefficient decreased in the range of $77.9{\sim}7.1$, and the leakage current increased in the range of $0.3{\sim}50.6\;{\mu}A$. The stability of electrical and dielectric characteristics was obtained from sintering temperature of $1260^{\circ}C$. the varistors sintered at $1260^{\circ}C$ marked the high electrical and dielectric stability, with $%{\Delta}{V_{1mA}=+1.9%,\;%{\Delta}{\alpha}=-10.6%,\;%{\Delta}I_L=+20%\;and\;%{\Delta}tan\;{\delta}=+9.9%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C$/24 h.

• 한국분말재료학회지
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• 제5권3호
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• pp.192-198
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• 1998

Microstructure and mechanical properties were examined on rapidly solidified Al-8wt%Fe alloy. High temperature strength test was also undertaken, and it is shown that the refinement in microstructure resulting from extremely rapid cooling rates gives rise to improved high temperature strength, but the elongation to fracture of this material decreases with increasing temperature, particularly in the temperature range up to 30$0^{\circ}C$. Specimens heat-treated for 100 hrs were analyzed with TEM micrographs to understand the thermal stability of this material.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2005년도 춘계 학술기술논문발표대회 논문집
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• pp.77-80
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• 2005

The surface of concrete tiles is weak in moisture that it occurrenced efflorescence, but in the former study we found that it is possible to ensure moisture stability of concrete surface by autoclaving. So this study is to discuss the moisture stability and Physical Properties of high-strength glossy concrete according to time and temperature of autoclave curing. As the results, by increasing time and temperature of autoclave curing, compressive strength and surface hardness increased and glossiness decreased. In the case to 3 hour and $180^{\circ}C$ of autoclave curing, there is not effloescences in mosture stability test.