• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.319-321
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• 2004

We report on progress in developing high-power excimer lasers as well as UV-optics for creating low-temperature poly silicon (LTPS). A new high-power excimer laser offers 315 Watts with high pulse to pulse energy stability. Larger substrates can now be processed in better quality with either the SLS process or the new optics for line beam excimer laser annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.885-888
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• 2000

The effects of deposition temperature and post annealing process of ferroelectric PbZr$\sub$0.52/Ti$\sub$0.48/O$_3$(PZT) thin films by pulsed laser deposition (PLD) were investigated. The PZT thin films were deposited at 400, 450, 500, and 550$^{\circ}C$, with/without post annealing at 650$^{\circ}C$ for 30 min. The PZT thin films deposited above 500$^{\circ}C$ without post annealing were crystallized into peroveskite phase, but the PZT thin films deposited below 450$^{\circ}C$ had pyrochlore phase. The PZT thin films deposited below 450$^{\circ}C$ with post annealing also crystallized into pure perovskite. Compared to the PZT thin films which were deposited at 450$^{\circ}C$ and post annealed, the films deposited at 550$^{\circ}C$ have a columnar microstructure and high remnant polarization 28 (${\mu}$C/cm$^2$). With in-situ annealing at oxygen ambient, the PZT thin films reduced oxygen vacancies and increased retained polarization.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.375-378
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• 1988

In this paper a newly designed rapid thermal process (RTP) structure is proposed to the slip induced in silicon wafers considerably. The reflectors and a graphite radiation were used to compensate the temperature difference causing slip in silicon wafers. From our experiments it is known that slip can be removed during a rapid thermal annealing at high temperature.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.124-129
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• 2013

In this paper, we manufactured the regenerated FBG by the thermal annealing of seed FBG based on UV irradiation. The writing conditions of regenerated FBGs were investigated in four types of optical fiber. FBGs written in $H_2$-free fiber were erased and not regenerated during the thermal annealing. FBG written in $H_2$ loaded Boron co-doped fiber was erased at the temperature of about $580^{\circ}C$ and regenerated about $590^{\circ}C$. However, the extinction of regenerated FBG started at the temperature over $900^{\circ}C$ and then FBG disappeared out. FBG written in $H_2$ loaded Ge high doped fiber was erased and regenerated around the temperature of $800^{\circ}C$ and maintained until the end of the thermal annealing. The reflection of the regenerated FBG was decreased about 12 dB and the center wavelength of the regenerated FBG was shifted about 0.7 nm compared with that of the seed FBG. The thermal characteristics of the regenerated FBG were analyzed by reheating from room temperature to $980^{\circ}C$. As results, the regenerated FBG had survived without a decrease of reflection and the thermal sensitivity was $15pm^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.150-154
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• 1998

Photoluminescence(PL), XRD, TEM results $5\times1016/\textrm{cm}^2, 1\times10^{17}/\textrm{cm}^2, 3\times10^{17}/\textrm{cm}^2$ Si-implanted $SiO_2$ films on crystalline silicon are reported. At low dose implantation and low annealing temperature, visible PL are observed. The PL spectrum has 7400$\AA$ and 8360$\AA$ peaks. As annealing time increased, the PL intensity are increased and peak positions are changed. The PL spectrum are not observed at high dose implantation and high annealing temperature. For the samples of low dose and high annealing temperature, visible PL are observed at short annealing time (30 minutes) and disappear for more than 1 hour annealing. From XRD and TEM results, silicon cluster are related to nonradiative defects. It is concluded that the origin of visible PL in Si implanted SiO2 films are not nanocrystal but two kinds of radiative defects. The Si-O-O bonding related defects (O rich defects) and Si-Si-O bonding related defects (Si rich defects) are related to the PL spectrum and depend on concentraion of Si implantation, annealing temperature and time.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.138-141
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• 2008

The effects of annealing temperature and time on mechanical properties and microstructures were investigated in cold drawn pearlitic steel wires. During annealing, the increment of the tensile strength at low temperatures found to be due to age hardening, while the decrease in the tensile strength at high temperatures was attributed to age softening, involving the spheroidization of lamellar cementite and recovery of lamellar ferrite. Since tensile strength and the occurrence of the delamination would be closely related to the dissolution of cementite, the lower annealing temperature and the increase of drawing strain caused the higher tensile strength and the easier occurrence of the delamination in cold drawn pearlitic steel wires.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1989-1991
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• 1999

This paper presents characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-$(5{\sim}25%)N_2$). The physical and electrical characteristics of these films investigated with the thickness range $3500{\AA}$ of CrN thin films, annealing temperature $(100{\sim}300^{\circ}C)$ and annealing $(24{\sim}72hr)$. The optimized condition of CrN thin-film strain gauges were thickness range of $3500{\AA}$ and annealing condition($300^{\circ}C$, 48 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, ${\rho}=1147.65{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=$-186ppm/^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. And change in resistance after annealing for the CrN thin-films were quitely linear and stable.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1277_1278
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• 2009

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.580-586
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• 2002

We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

• Journal of Welding and Joining
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• v.25 no.5
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• pp.51-57
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• 2007

The present work was aimed to examine the variation of microstructure and mechanical properties by annealing($100{\sim}620^{\circ}C$, $2{\sim}8hr$) in A3003 Al alloy welded pipes. The A3003 Al alloy pipes with 34 mm in external diameter and 1.3 mm in thickness were manufactured by high frequency induction welding with the V shaped convergence angle $6.7^{\circ}$ and power input 50 kW. The tensile and yield strength decreased with increasing the annealing temperature remarkably, but elongation increased remarkably. Vickers hardness in welds decreased with increasing the annealing temperature remarkably. The primary intermetallic compound of $Al_{12}(Fe,\;Mn)_2Si$ was precipitated in welds as the same base metal. In a certain experimental condition, the welds line in A3003 alloys disappeared at $450^{\circ}C$ for 2 hr because of the same mechanical property and structure between welds and base metal.