• Title/Summary/Keyword: high-sensitivity strain sensor

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Transparent and Flexible All-Organic Multi-Functional Sensing Devices Based on Field-effect Transistor Structure

  • Trung, Tran Quang;Tien, Nguyen Thanh;Seol, Young-Gug;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.491-491
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    • 2011
  • Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

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The Fabrication of Chromium Nitride Thin-Film Type Pressure Sensors for High Pressure Application and Its Characteristics (고압용 코롬질화박막형 압력센서의 제작과 그 특성)

  • 정귀상;최성규;서정환;류지구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.6
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    • pp.470-474
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    • 2001
  • This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

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Characteristics of thin-film type pressure sensors for high pressure (고압용 박막형 압력센서의 특성)

  • 서정환;최성규;정찬익;류지구;남효덕;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.737-740
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    • 2001
  • This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500${\AA}$ and annealing condition(300$^{\circ}C$, 3 hr) in Ar-10 %N$_2$deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS.

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Fabrication and Characterization of a Flexible PVDF Fiber-based Polymer Composite for High-performance Energy Harvesting Devices

  • Nguyen, Duc-Nam;Moon, Wonkyu
    • Journal of Sensor Science and Technology
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    • v.28 no.4
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    • pp.205-215
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    • 2019
  • A flexible polyvinylidene fluoride (PVDF)/polydimethylsiloxane (PDMS) composite prototype with high piezoelectricity and force sensitivity was constructed, and its huge potential for applications such as biomechanical energy harvesting, self-powered health monitoring system, and pressure sensors was proved. The crystallization, piezoelectric, and electrical properties of the composites were characterized using an X-ray diffraction (XRD) experiment and customized experimental setups. The composite can sustain up to 100% strain, which is a huge improvement over monolithic PVDF fibers and other PVDF-based composites in the literature. The Young's modulus is 1.64 MPa, which is closely matched with the flexibility of the human skin, and shows the possibility for integrating PVDF/PDMS composites into wearable devices and implantable medical devices. The $300{\mu}m$ thick composite has a 14% volume fraction of PVDF fibers and produces high piezoelectricity with piezoelectric charge constants $d_{31}=19pC/N$ and $d_{33}=34pC/N$, and piezoelectric voltage constants $g_{31}=33.9mV/N$ and $g_{33}=61.2mV/N$. Under a 10 Hz actuation, the output voltage was measured at 190 mVpp, which is the largest output signal generated from a PVDF fiber-based prototype.

Characteristics of A Diaphragm-Type Fiber Optic Fabry-Perot Interferometric Pressure Sensor Using A Dielectric Film (유전체 박막을 이용한 다이아프램형 광섬유 Fabry-Perot 간섭계 압력센서의 특성)

  • Kim, M.G.;Yoo, Y.W.;Kwon, D.H.;Lee, J.H.;Kim, J.S.;Park, J.H.;Chai, Y.Y.;Sohn, B.K.
    • Journal of Sensor Science and Technology
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    • v.7 no.3
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    • pp.147-153
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    • 1998
  • The strain characteristics of a fiber optic Fabry-Perot pressure sensor with high sensitivity using a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ (N/O/N) diaphragm is experimentally investigated. A 600 nm thick N/O/N diaphragm was fabricated by silicon anisotropic etching technology in 44 wt% KOH solution. An interferometric fiber optic pressure sensor has been manufactured by using a fiber optic Fabry-Perot intereferometer and a N/O/N diaphragm. The 2 cm length fiber optic Fabry-Perot interferometers in the continuous length of single mode fiber were produced with two pieces of single mode fiber coated with $TiO_{2}$ dielectric film utilizing the fusion splicing technique. The one end of the fiber optic Fabry-Perot interferometer was bonded to a N/O/N diaphragm. and the other end was connected to an optical setup through a 3 dB coupler. For the N/O/N diaphragm sized $2{\times}2\;mm^{2}$ and $8{\times}8\;mm^{2}$, the pressure sensitivity was measured 0.11 rad/kPa and 1.57 rad/kPa, respectively, and both of the nonlinearities were less than 0.2% FS.

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Sensing the Stress: the Role of the Stress-activated p38/Hog1 MAPK Signalling Pathway in Human Pathogenic Fungus Cryptococcus neoformans

  • Bahn, Yong-Sun;Heitman, Joseph
    • Proceedings of the Microbiological Society of Korea Conference
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    • 2007.05a
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    • pp.120-122
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    • 2007
  • All living organisms use numerous signal-transduction pathways to sense and respond to their environments and thereby survive and proliferate in a range of biological niches. Molecular dissection of these signalling networks has increased our understanding of these communication processes and provides a platform for therapeutic intervention when these pathways malfunction in disease states, including infection. Owing to the expanding availability of sequenced genomes, a wealth of genetic and molecular tools and the conservation of signalling networks, members of the fungal kingdom serve as excellent model systems for more complex, multicellular organisms. Here, we employed Cryptococcus neoformans as a model system to understand how fungal-signalling circuits operate at the molecular level to sense and respond to a plethora of environmental stresses, including osmoticshock, UV, high temperature, oxidative stress and toxic drugs/metabolites. The stress-activated p38/Hog1 MAPK pathway is structurally conserved in many organisms as diverse as yeast and mammals, but its regulation is uniquely specialized in a majority of clinical Cryptococcus neoformans serotype A and D strains to control differentiation and virulence factor regulation. C. neoformans Hog1 MAPK is controlled by Pbs2 MAPK kinase (MAPKK). The Pbs2-Hog1 MAPK cascade is controlled by the fungal "two-component" system that is composed of a response regulator, Ssk1, and multiple sensor kinases, including two-component.like (Tco) 1 and Tco2. Tco1 and Tco2 play shared and distinct roles in stress responses and drug sensitivity through the Hog1 MAPK system. Furthermore, each sensor kinase mediates unique cellular functions for virulence and morphological differentiation. We also identified and characterized the Ssk2 MAPKKK upstream of the MAPKK Pbs2 and the MAPK Hog1 in C. neoformans. The SSK2 gene was identified as a potential component responsible for differential Hog1 regulation between the serotype D sibling f1 strains B3501 and B3502 through comparative analysis of their meiotic map with the meiotic segregation of Hog1-dependent sensitivity to the fungicide fludioxonil. Ssk2 is the only polymorphic component in the Hog1 MAPK module, including two coding sequence changes between the SSK2 alleles in B3501 and B3502 strains. To further support this finding, the SSK2 allele exchange completely swapped Hog1-related phenotypes between B3501 and B3502 strains. In the serotype A strain H99, disruption of the SSK2 gene dramatically enhanced capsule biosynthesis and mating efficiency, similar to pbs2 and hog1 mutations. Furthermore, ssk2, pbs2, and hog1 mutants are all hypersensitive to a variety of stresses and completely resistant to fludioxonil. Taken together, these findings indicate that Ssk2 is the critical interface protein connecting the two-component system and the Pbs2-Hog1 pathway in C. neoformans.

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Bending Characteristics Change of Long-Period fiber Grating due to Co-doping of Boron for Optical fiber Sensors (광섬유 센서 구성을 위한 보론 첨가에 따른 장주기 광섬유 격자의 구부림 특성 변화)

  • Moon, Dae-Seung;Chung, Young-Joo
    • Journal of the Korean Society for Nondestructive Testing
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    • v.25 no.5
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    • pp.339-342
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    • 2005
  • In long-period fiber grating (LPFG) to be made up optical fiber sensors, resonance coupling occurs between the forward-propagating core mode and cladding modes at the wavelength that satisfy the Phase matching condition. The resonance wavelength and the coupling strength depends strongly on the external environment like temperature, strain, and ambient index. These characteristics can be utilized for various applications as optical fiber sensors. fabrication of optical fiber gratings is typically based on the photosensitivity effect, i.e. the permanent change of the refractive index upon irradiation of the UV beam, and therefore, fabrication of the optical fiber with high phososensitivity is an important part of the research on optical fiber gratings. In this work, we measured the effort of to-doping of boron on the index difference between the core and cladding of the optical fiber and the sensitivity of the LPFC to the temperature and bending changes. We observed that the index difference between the core and the cladding decreased by $(1.69{\times}10^{-4}/SCCM)$ and the temperature sensitivity of the resonance wavelength shirt decreased by $(0.01145nm/^{\circ}C/SCCM)$. The dependence or the bending-induced changes or the transmission characteristics of LPFG on the tore-cladding index difference was investigated experimentally. The measurement results indicate that the bending sensitivity increases as the index difference decreases.