• Advances in materials Research
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• v.2 no.3
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• pp.133-140
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• 2013

This paper aims to focus on the microwave processing of thick films which is a fast, cheap technique and could be the alternative to the currently used conventional high temperature processing technique. Microwave processing has gained worldwide acceptance as a novel method for heating and sintering a variety of materials, as it offers specific advantages in terms of speed, energy efficiency, process simplicity, finer microstructures and lower environmental hazards. Silver conducting thick films were prepared and processed in the household microwave oven. The films sintered at different time period by keeping the other parameter such as microwave power, film thickness etc constant. The microstructure analysis revealed that the surface morphology of the microwave processed films become compact with respect to the processing time. The sheet resistance for microwave sintered silver films is in the range of 0.003 to $1.207{\Omega}/{\Box}$ where as the films fired at 750 and $850^{\circ}C$ showed the resistance of 0.009 and $0.003{\Omega}/{\Box}$ which can be comparable. The results revealed that the microstructure of the microwave sintered films has more uniform and compact surface than that of the conventionally fired films. The paper reports upon the preparation of silver thick film by screen printing technique and processing the same by microwave which also compared with the conventionally processed thick films.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.1
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• pp.105-113
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• 2013

In this work, using a ${\pi}$-type multiple coupled microstrip line structure (MCMLS) and RCR (Resistor Capacitor Resistor) structure, we fabricated ultra-compact and high isolation Wilkinson power divider on GaAs MMIC (Monolithic Microwave Integrated Circuit). The line length of the Wilkinson power divider was reduced to about ${\lambda}$/46, and its size was 0.304 [$mm^2$], which is 12.1 % of conventional one. Compared with conventional Wilkinson power divider, isolation characteristic of the proposed Wilkinson power divider was highly improved by using RCR insertion method. The proposed Wilkinson power divider showed good RF performances in C/X band.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1078-1080
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• 2003

This paper proposes the boost input type resonant power supply for driving the magnetron device of the high-capacity microwave oven. Circuit topology of the proposed power supply is the boost input type resonant converter which uses the resonance between transformer leakage inductance and resonance capacitance. Proposed power supply obtains high power factor more than 98% through continuous current mode pulse width modulation. To verify the validity of the proposed power supply, operation principle in the steady state is analyzed and experimental results are presented.

• ETRI Journal
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• v.33 no.5
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.3
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• pp.264-272
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• 2009

In this paper, a Ka-band 10 W power amplifier module is designed and fabricated using MIC(Microwave Integrated Circuit) module technology which combines multiple power MMIC(Monolithic Microwave Integrated Circuit) chips on a thin film substrate. Modified Wilkinson power dividers/combiners are used for millimeter wave modules and CBFGC-PW-Microstrip transitions are utilized for reducing connection loss and suppressing resonance in the high-gain and high-power modules. The power amplifier module consists of seven MMIC chips and operates in a pulsed mode. for the pulsed mode operation, a gate pulse control circuit supplying the control voltage pulses to MMIC chips is designed and applied. The fabricated power amplifier module shows a power gain of about 58 dB and a saturated output power of 39.6 dBm at a center frequency of the interested frequency band.

• Current Industrial and Technological Trends in Aerospace
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• v.7 no.2
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• pp.33-39
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• 2009

On 1968 Dr. Peter Glaser introduced the concept of a large solar power satellite system in a high geosynchronous orbit for collection and conversion of solar energy into an electromagnetic microwave beam to transmit usable energy to rectennas on earth. With respect to it, U.S.A, Japan, E.U., etc. noted the Space Solar Power(SSP) as a future new energy resource, performed a substantial research and the concept design, and recently announced detailed plans for realizing SSP projects. While the new technology of SSP is developing, U.S.A. and Japan have a plan to provide the electric service by using SSP 2030. This paper presents the technology trend of advanced countries and the domestic strategies on the SSP development as a green energy and a new energy resource.

• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.218.1-218.1
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• 2014

In order to measure the absolute plasma density, various probes are proposed and investigated and microwave probes are widely used for its advantages (Insensitivity to thin non-conducting material deposited by processing plasmas, High reliability, Simple process for determination of plasma density, no complicate assumptions and so forth). There are representative microwave probes such as the cutoff probe, the hairpin probe, the impedance probe, the absorption probe and the plasma transmission probe. These probes utilize the microwave interactions with the plasma-sheath and inserted structure (probe), but frequency range used by each probe and specific mechanisms for determining the plasma density for each probe are different. In the recent studies, behaviors of each microwave probe with respect to the plasma parameters of the plasma density, the pressure (the collision frequency), and the sheath width is abundant and reasonably investigated, whereas relative diagnostic characteristics of the probes by a comparative study is insufficient in spite of importance for comprehensive applications of the probes. However, experimental comparative study suffers from spatially different plasma characteristics in the same discharge chamber, a low-reproducibility of ignited plasma for an uncertainty in external discharge parameters (the power, the pressure, the flow rate and so forth), impossibility of independently control of the density, the pressure, and the sheath width as well as expensive and complicate experimental setup. In this paper, various microwave probes are simulated by finite-different time-domain simulation and the error between the input plasma density in FDTD simulations and the measured that by the unique microwave spectrums of each probe is obtained under possible conditions of plasma density, pressure, and sheath width for general low-temperature plasmas. This result shows that the each probe has an optimum applicable plasma condition and reliability of plasma density measurement using the microwave probes can be improved by the complementary use of each probe.

• Journal of Environmental Science International
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• v.22 no.9
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• pp.1097-1103
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• 2013

Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

• Journal of Ginseng Research
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• v.40 no.4
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• pp.415-422
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• 2016

Background: Rare ginsenosides in Panax quinquefolius L. have strong bioactivities. The fact that it is hard to obtain large amounts of rare ginsenosides seriously restricts further research on these compounds. An easy, fast, and efficient method to obtain different kinds of rare ginsenosides simultaneously and to quantify each one precisely is urgently needed. Methods: Microwave-assisted extraction (MAE) was used to extract nine kinds of rare ginsenosides from P. quinquefolius L. In this article, rare ginsenosides [20(S)-Rh1, 20(R)-Rh1, Rg6, F4, Rk3, 20(S)-Rg3, 20(R)-Rg3, Rk1, and Rg5] were identified by high performance liquid chromatography (HPLC)-electrospray ionization-mass spectrometry. The quantity information of rare ginsenosides was analyzed by HPLC-UV at 203 nm. Results: The optimal conditions for MAE were using water as solvent with the material ratio of 1:40 (w/v) at a temperature of $145^{\circ}C$, and extracting for 15 min under microwave power of 1,600 W. Seven kinds of rare ginsenosides [20(S)-Rh1, 20(R)-Rh1, Rg6, F4, Rk3, Rk1, and Rg5] had high extraction yields, but those of 20(S)-Rg3 and 20(R)-Rg3 were lower. Compared with the conventional method, the extraction yields of the nine rare ginsenosides were significantly increased. Conclusion: The results indicate that rare ginsenosides can be extracted effectively by MAE from P. quinquefolius L. in a short time. Microwave radiation plays an important role in MAE. The probable generation process of rare ginsenosides is also discussed in the article. It will be meaningful for further investigation or application of rare ginsenosides.