• 한국재료학회지
• /
• 제19권4호
• /
• pp.198-202
• /
• 2009

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.341-341
• /
• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.75-87
• /
• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• 한국수산과학회지
• /
• 제15권4호
• /
• pp.283-290
• /
• 1982

Sardine and mackerel so called dark muscled fish have been underutilized due to the disadvantages in bloody meat color, high content of fat, and postmortem instability of protein. Recent efforts were made to overcome these defects and develope new types of product such as texturized protein concentrates and dark muscle eliminated minced fish. Approach of this study is based on the rapid dehydration of foamed fish-starch paste by dielectric heating. In process comminuted sardine meat was washed more than three times by soaking and decanting in chilled water and finally centrifuged. The meat was ground in a stone mortar added Ivith adequate amounts of salt, foaming agent, and other ingredients for aid to elasticity and foam stability. The ground meat paste was extruded in finger shape and heated in a microwave oven to give foamed, expanded, and porous solid structure by dehydration. Dielectric onstant $(\varepsilon')$ and dielect.ic loss $(\varepsilon")$ values of sardine meat paste were influenced by wavelength and moisture level. Those values at 100 KHz and 15 MHz were ranged 2.25-9.86; 2.22-4,18 for E' and 0.24-19.24; 0.16-1.20 for E", respectively, at the moisture levels of $4.2-13.8\%$. For a formula for fish-starch paste preparation, addition of $20-30\%$ starch (potato starch) to the weight of fish meat, $2-4\%$ salt, and $5-10\%$ soybean protein was adequate to yield 4-5 folds of expansion in volume when heated. Addition of e99 yolk was of benefit to micronize foam size and better crispness. In order to provide better foaming and dehydration, addition of $0.2-0.5\%$sodium bicarbonate, foaming agent, was proper to result in foam size of 0.5-0.7 mm and foam density of $200-400\;/cm^2$ which gave a good crispness. Heating time was depended upon the moisture level of fish-starch paste. For a finger shaped paste (1.0cm. $D\times10cm.L$) heating for 150-200 sec. in a microwave oven (700W. 2.45GHz) was sufficient to generate foams, expand, and solidify the porous structure of fish-starch paste. When the moisture content was above $55\%$ browning and scorching was deepened due to over-expansion and over-heating whereas the crispness was hardened by insufficient expansion at lower moisture content. In quality evaluation of the product, chemical composition of $30\%$ starch and $3\%$ salt added product was moisture $8.8\%$, lipid $2.4\%$, carbohydrate $46.7\%$, protein $36.1\%$, and ash $6.0\%$. Eleven membered panel test evaluated that fish-starch paste was acceptable in color, crisp-ness, taste, except a trace of fishy odour which could be masked by the addition of spice extracts.

• 한국산학기술학회논문지
• /
• 제21권8호
• /
• pp.593-602
• /
• 2020

국내 공장이나 지중에 설치되어 있는 전력 케이블은 제조과정, 설치, 사용 중의 환경여건에 따라 사고가 발생할 수 있는 필연성을 갖고 있다. 전력 케이블에서 사고가 일어났을 때 막대한 경제적 손실과 사회적 혼란을 야기할 수 있어 이를 미연에 방지하고자 진단을 통한 케이블의 예방관리의 중요성이 증대되고 있다. 이에 본 논문에서는 현장에서 발생 될 수 있는 케이블의 설치나 제조결함, 경년열화로 문제가 될 수 있는 부분을 모의하여 진단시료 케이블을 제작하였고, 최근 도입되어 적용되고 있는 VLF(Very Low Frequency)장비를 사용하여 유전정접(tan 𝛿 ; TD), 부분방전(Partial Discharge ; PD)시험을 실시하였고, 0.1Hz 주파수를 갖는 VLF전원을 가압을 한 후 HFCT(High Frequency Current Transformer)를 이용한 부분방전과 AC(상용주파)내압 장비를 이용하여 가압한 후 PD측정을 수행하였다. 그 결과, VLF를 통한 2.0U₀ 전압에서 B, C상 결함시료에서는 내부 부분방전을 측정할 수 있었으며 A상 정상시료에서는 0.5~2.0U₀ 전압에서 모두 노이즈로 측정되었다. 또한, 상용주파수의 AC(60Hz) 내압장비를 통한 1.5U₀전압에서 측정하여 그 실효성을 검증하였다. 활선상태에서의 부분방전은 1.0U₀의 사용전압에서 측정 되어지며, 장비를 설치할 때 위험성이 있고, AC내압장비는 부피나 무게 등에 의해 이동의 어려움이 있어 사선상태의 VLF를 통한 진단방법이 안전과 실효성이 있음을 알 수 있었다.

• 마이크로전자및패키징학회지
• /
• 제27권4호
• /
• pp.97-105
• /
• 2020

최근 초고속 이더넷(ethernet)의 데이터 및 동작주파수 속도가 증가하고 있으며, 이에 따라 EMI(electromagnetic interference)가 증가하고 있다. 이러한 EMI의 발생은 주변 전자기기들에 영향을 미쳐 오동작 원인이 될 가능성이 높다. 본 연구에서는 고속 이더넷 스위치 EMI 발생의 주요 원인인 DC-DC SMPS (switching mode power supply)에서 발생하는 EMI 저감을 위해 EMI 필터를 적용하였다. EMI 필터소자는 소형화, 양산화에 장점을 가지며, 내전압(dielectric voltage) 특성이 우수한 MLCC (multi-layer ceramic capacitor)를 사용하였다. MLCC 필터는 X-커패시터 및 X, Y-커패시터로 구성되어 있다. X-커패시터는 10 nF 및 100 nF 용량의 2개의 MLCC와 1개의 마일러 콘덴서(mylar capacitor)로 구성하였다. Y-커패시터는 용량 27 nF의 6개의 MLCC를 사용하여 구성하였다. X-커패시터만을 EMI 필터로 적용한 경우, 전도성(conductive) EMI는 150 kHz ~ 30 MHz의 주파수 대역에서 EMI 전계강도가 허용 한계치를 초과함을 알 수 있었다. 또한 방사성(radiative) EMI도 특정 주파수에서 EMI 전계 강도가 높고, 허용 마진폭도 매우 적음을 알 수 있었다. 반면 X, Y-커패시터를 적용하였을 경우, 전 주파수 대역에서 전도성 EMI가 크게 감소하였으며, 방사선 EMI도 충분한 마진이 확보됨을 알 수 있었다. 또한 X, Y-커패시터의 전기적인 신뢰성을 평가하기 위하여 절연 저항(insulation resistance) 및 내전압 성능을 측정하였으며, 절연 저항 및 내저항 성능이 모두 전기적 신뢰성 기준을 만족함을 알 수 있었다. 결론적으로 MLCC 필터를 X, Y-커패시터로 사용하여 전도성 및 방사성 EMI 노이즈가 효과적으로 감소되었고, 우수한 전기적인 신뢰성도 확보됨을 알 수 있었다.

• 한국세라믹학회지
• /
• 제49권5호
• /
• pp.475-483
• /
• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.10-10
• /
• 2008

Silicide is inevitable for CMOSFETs to reduce RC delay by reducing the sheet resistance of gate and source/drain regions. Ni-silicide is a promising material which can be used for the 65nm CMOS technologies. Ni-silicide was proposed in order to make up for the weak points of Co-silicide and Ti-silicide, such as the high consumption of silicon and the line width limitation. Low resistivity NiSi can be formed at low temperature ($\sim500^{\circ}C$) with only one-step heat treat. Ni silicide also has less dependence of sheet resistance on line width and less consumption of silicon because of low resistivity NiSi phase. However, the low thermal stability of the Ni-silicide is a major problem for the post process implementation, such as metalization or ILD(inter layer dielectric) process, that is, it is crucial to prevent both the agglomeration of mono-silicide and its transformation into $NiSi_2$. To solve the thermal immune problem of Ni-silicide, various studies, such as capping layer and inter layer, have been worked. In this paper, the Ni-silicide utilizing Pd stacked layer (Pd/Ni/TiN) was studied for highly thermal immune nano-scale CMOSFETs technology. The proposed structure was compared with NiITiN structure and showed much better thermal stability than Ni/TiN.

• 한국자기학회지
• /
• 제17권1호
• /
• pp.47-50
• /
• 2007

최근 geometrical frustration 현상 및 멀티페로익 효과가 Cr 이온의 나선 스핀 구조에 기인하는 것으로 해석되고 있다. 이에 본 연구에서는 Cr 이온 자리에 Fe을 치환하여 $CoCrFeO_4$를 제조하였고, $M\"{o}ssbauer$ 분광법에 의해 자기적 미세 구조의 상관관계를 연구하였다. 졸겔법을 이용하여 Fd3m의 cubic 스피넬 구조를 갖는 $CoCr_2O_4,\;CoCrFeO_4$ 단일상을 합성하였고, Rietveld 법에 의한 분석결과 격자상수는 $a_0=8.340$에서 $8.377{\AA}$로 증가 하였으며, Cr, Fe 이온은 모두 팔면체 구조에 위치하는 것으로 분석되었다. 자기 상전이 온도는 $T_N=97K$에서 320 K로 증가하였으며, 상호작용의 변화에 따라서 field cooled 온도에 따른 자화 곡선의 변화를 관측하였다. $M\"{o}ssbauer$ 스펙트럼 분석결과 4.2 K에서 공명흡수선에 대한 초미세자기장($H_{hf}$) 값은 각각 507, 492 kOe 정도로 나타났으며, 이성질체 이동치($\delta$)는 0.33, 0.34 mm/s 정도로 Fe 이온상태가 둘 다 +3 가의 이온상태임을 알 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.171.2-171.2
• /
• 2016

The 2-dimensiona electron gas (2DEG) layers have opened tremendous interests in the heterooxide interfaces formed between two insulating materials, especially between LaAlO3 and $SrTiO_3$. The 2DEG layers exhibit extremely high mobility and carrier concentrations along with metallic transport phenomena unlike the constituent oxide materials, i.e., $LaAlO_3$ and $SrTiO_3$. The current work inserted artificially the interfacial layer, $Sr_xCa_{1-x}TiO_3$ between $LaAlO_3$ and $SrTiO_3$, with the aim to controlling the 2-dimensional transports. The insertion of the additional materials affect significantly their corresponding electrical transports. Such features have been probed using DC and AC-based characterizations. In particular, impedance spectroscopy was employed as an AC-based characterization tool. Frequency-dependent impedance spectroscopy have been widely applied to a number of electroceramic materials, such as varistors, MLCCs, solid electrolytes, etc. Impedance spectroscopy provides powerful information on the materials system: i) the simultaneous measurement of conductivity and dielectric constants, ii) systematic identification of electrical origins among bulk-, grain boundary-, and electrode-based responses, and iii) the numerical estimation on the uniformity of the electrical origins. Impedance spectroscopy was applied to the $LaAlO_3/Sr_xCa_{1-x}TiO_3/SrTiO_3$ system, in order to understand the 2-dimensional transports in terms of the interfacial design concepts. The 2-dimensional conduction behavior system is analyzed with special emphasis on the underlying mechanisms. Such approach is discussed towards rational optimization of the 2-dimensional nanoelectronic devices.