• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.391-394
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• 2006

This paper presents soft switching zero voltage switching high frequency inverter for rare gas fluorescent lamp using dielectric-barrier discharge phenomenon. The simple high-frequency inverter can completely achieve stable zero voltage soft switching (ZVS) commutation for wide its output power regulation ranges and load variations under its constant high frequency pulse density modulation (PDM) scheme. Its transient and steady state operating principle is originally described and discussed for a constant high-frequency PDM control strategy under a stable ZVS operation commutation, together with its output effective power regulation characteristics-based on the high frequency PDM strategy. The experimental operating performances of this high frequency Inverter are illustrated as compared with computer simulation results and experimental ones. Its light dimming characteristics due to power regulation scheme are evaluated and discussed on the basis of simulation and experimental results. The feasible effectiveness of this high frequency inverter appliance implemented here is proven from the practical point of view.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.86-91
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• 2016

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.410-413
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• 2002

In this paper, the performance of high-k dielectric is modeled by observing electrical characteristics through the process and device simulation. ZrO$_2$ on Si substrate is used as test structures to characterize the current-voltage and the capacitance-voltage profiles. In order to verify the simulation results, the experimental results are used as a reference. Based on the modeling results, the methodology can be a potential tool to predict the characteristics of the ZrO$_2$ dielectric.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.263-269
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• 2011

In this study, the compositions for the microwave dielectric materials were investigated to obtain the improved dielectric properties, the high temperature stability, and the sintering temperature of less than $900^{\circ}C$, which was necessary for cofiring with the internal conductor of silver. In addition, the dielectric sheets were prepared by the tape casting technique, after which the sheets were laminated and sintered. In this process, the optimum ratio of powder and binder, laminating pressure, temperature, and possibility for cofiring with the internal conductor were studied. Finally, multilayer chip treplexer filter for the 800-2,000 MHz range were fabricated, and the frequency characteristics of the triplexer filter were investigated. When the $0.6TiTe_3O_8-0.4MgTiO_3+3wt%SnO+7wt%H_3BO_3$ ceramics were sintered at $820^{\circ}C$ for 0.3 hours, the microwave dielectric properties of the dielectric constant of 29.91, quality factor of 33,000 GHz, and temperature coefficient of resonant frequency of -2.76 ppm/$^{\circ}C$ were obtained. Using the Advanced Design System (ADS) and High Frequency Structure Simulator (HFSS), the multilayer chip triplexer filter acting at the range of 800-2,000 MHz were simulated and manufactured. The manufactured triplexer filter had the excellent frequency properties in the CDAM800, GPS and PCS frequency regions, respectively.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.391-393
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• 1997

Two kinds of the calculation technique are Investigated with 3D triangular SCM for the arrangement of the dielectric sphere with different resistivity under a uniform electric field. The calculation error of Method I is small outside the sphere, but considerably high Inside. On the other hand, the accuracy is much Improved even Inside the solid dielectric by Method II, which uses double layers of triangular charges on the dielectric boundary.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.615-619
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• 2003

Temperature and frequency dependence of dielectric and electrical properties was investigated in cerium and manganese doped Sr$\_$0.6/Ba$\_$0.4/Nb$_2$O$\_$6/(60SBN) ceramic system. Structural deformation of 60SBN by dopants did not appeared. 1350$^{\circ}C$-10 h sintered specimen had higher densification than 1250$^{\circ}C$-10 h sintered one, to which dielectric properties are related. That the feature of dielectric maxima peaks was typical Diffusive Phase Transition (DPT), it was explained by "random-field Ising model". Even though 60SBN has large dielectric loss at high frequency above 100 ㎑, it is desirable for optical applications because of low dielectric loss at low frequency. From Arrhenius plot of temperature, the activation energy was calculated to 0.45-0.49 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.663-666
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• 2004

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1462-1465
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• 1996

This paper evaluated dielectic characteristics on EPR, Polyester and insulation of these different interface. Dielectric characteristics of insulation rubber, Polyester increace greatly according as temperature increases have no effect on applied voltage and pressure. On the condition that interface exists, we confirmed that dielectric characteristics had been influence on semiconductor which had high $tan{\delta}$.

• Journal of Information Display
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• v.11 no.2
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• pp.52-56
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• 2010

High-efficiency organic light-emitting diodes (OLEDs) based on multilayer transparent electrodes (MTEs) are reported. The dielectric/metal/dielectric (DMD) multilayer electrode based on a thin silver layer achieved high sheet conductance as small as $6{\Omega}/sp$ and a tuning capability in the optical and electrical properties by engineering the inner and outer dielectric layers. In the conventional normal bottom-emitting structure, a DMD-based OLED can be fabricated with 90% higher forward luminous efficiency and 30% higher external quantum efficiency (EQE) compared to ITO-based devices. Special attention was paid to the optimization method of such MTE structure considering both the injection and optical structures.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.90-96
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• 2014

Flexible $ZrO_2$ films as dielectric materials for high-energy-density capacitors were deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $ZrO_2$ films were dependent on the sputtering pressure and gas ratio. Although $ZrO_2$ films were deposited at room temperature, all films showed a tetragonal crystalline structure regardless of the sputtering variables. The surface of the film became a surface with large white particles upon an increase in the $O_2/Ar$ gas ratio. The RMS roughness and crystallite size of the $ZrO_2$ films increased with an increase in the sputtering pressure. The electrical properties of the $ZrO_2$ films were affected by the microstructure and roughness. The $ZrO_2$ films exhibited a dielectric constant of 21~38 at 1 kHz and a leakage current density of $10^{-6}{\sim}10^{-5}A/cm^2$ at 300 kV/cm.