• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1471-1475
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• 2007

In this paper, a novel embedded ultra wideband (UWB) band-pass filter is presented on a FR-4 package substrate including high Dk resin coated copper (${\varepsilon}_r=30$) film. The proposed UWB filter is comprised of a parallel resonator with meander-type uniform impedance resonator (UIR) and two series resonators with high Q circular stacked spiral inductor and metal-insulator-metal (MIM) capacitor. In order to obtain excellent attenuation characteristics by generating attenuation poles in lower and upper stop bands, a single MIM capacitor is added to each resonator. The fabricated FR-4 embedded UWB filter has insertion loss of -1.0dB and return loss of -11dB, respectively. It has also extremely wide bandwidth (over 50%) and small size ($3.7{\times}4{\times}0.77\;mm^3$) which is compatible with LTCC devices.

• Proceedings of the KIEE Conference
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• 1993.07a
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• pp.460-463
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• 1993

In this paper, The laser transmitter module is designed as the subsystem of the high repetitive laser rangefinder. The module consists of high voltage power supply, high voltage control circuits, high voltage discharger, electro-optic Q-switch driver, and laser resonator. The high voltage power supply is composed of 2-phase flyback converter. And it has 220W power level and 78% conversion efficiency. From the Q-switch driver of the crossed porro resonator, the phase retardation voltage is switched from 600V to -1500V with 200ns falling time. The module can be operated up to 15Hz. And it generates the laser pulse which has 20ns width and 80mJ.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.431-433
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• 1997

We investigated a double ring resonator(DRR)device to improve the resonating Q value of a superconductor resonator. To make a DRR device, we made a large area YBCO film on a MgO substrate by pulsed laser deposition(PLD). Thetransition temperature was 88 K and the film was uniformly deposited. We also deposited 500$\AA$SrTiO$_{3}$on the YBCO thin film to protect the superconducting properties from degradation. The loaded Q value was measured as 50000 from simulation and as 2000 from experiment near 10GHz at 77K.

• Journal of Advanced Navigation Technology
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• v.14 no.2
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• pp.176-182
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• 2010

This paper proposes that an inverse class-E amplifier is used a tunable parallel resonator at output port in order to maintain a high power-added efficiency(PAE) and output power with wide frequency ranges. A tunable circuit has a constant Q factor at operating frequency ranges and because of using varactor diode, the inductor and capacitor values of resonator can be changed. Also, the inductance value for zero-current switching (ZCS) is implemented a lumped element and the capacitance value is made a distributed element for phase compensation. The inverse class E amplifier using tunable parallel resonator is obtained to deliver 25dBm output power and achieve maximum power added efficiency(PAE) of 75% at 65-120MHz frequency ranges.

• Journal of Astronomy and Space Sciences
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• v.18 no.2
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• pp.119-128
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• 2001

The oscillation frequency tuning range of waveguide Gunn oscillator and its stability depend sensitively on the dimensions of the resonator. Therefore the embedding impedances with the various dimensions of the resonator for Q-band (33 ∼ 50 GHz) Gunn oscillator are calculated by using HFSS (High Frequency Structure Simulator). In this paper the comparisons between theoretical results of embedding impedances as a function of frequency and that of experimental results are described. And the oscillation frequency range could be predicted by using the theoretical evaluation methods which were proposed in this paper It shows that post size has an effect on the frequency tuning characteristics of Gunn oscillator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.147-155
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• 2005

In this paper, we propose that three uniform coplanar waveguides(CPWs), such as a conventional, finite grounded(FG), and grounded(G) CPWs, can be coupled with a $TE_{01{\delta}}$ mode dielectric resonator(DR) for a parallel resonant characteristic as a microstrip line coupled with the DR. Coupling characteristics have been investigated by placing the DR on a dielectric support above the CPWs and by moving the DR away from the center of a slot of the CPWs to the ground plane. FEM simulation(HFSS) results in terms of S-parameters agree well with measurement results. Finally, unloaded Q values of the DR coupled with the three uniform CPWs are compared with those of the DR coupled with a microstrip line. The comparison shows that the DR coupled with the three CPWs has higher unloaded Qs than that coupled with a microstrip line and that the GCPW case has the highest unloaded Qs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.156-159
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1984.04a
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• pp.25-28
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• 1984

This paper describes the design of band-pass filter using the dielectric resonator and microstrip line depends mainly upon the magnetic field and is principal parameter as band-pass filter. Because dielectric resonator band~pass filter has a very high-Q, the bandwidth of this filter is very narrow. as a result of experiment, the dielectric resonator bandwidth of this filter is very narrow. As a result of experiment, the dielectric resonator band-pase filter has various modes central frequencies due to the mode change and good characteristric as a band-pass filter.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.365-366
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• 2002

A novel TEM resonator coil was developed for the imaging of small animals. The functional elements of the TEM resonator were 8 inner conductors, distributed in a cylindrical pattern and connected at the ends with capacitors to the cylindrical outer shield. The TEM resonator coil with cavity elements was robust to the surrounding influences due to the self-shielding structure. The TEM resonator coil with high Q factor could provide high quality MR images at 3.0T MRI system. Also, the TEM resonator coil has an advantage for a fine tune with length adjustment of each cavity elements. Thus, The TEM resonator coil at 3.0T, even higher field could be used in the research studies.