• 전력전자학회논문지
• /
• 제17권4호
• /
• pp.322-329
• /
• 2012

This paper proposes a non-isolated bidirectional soft-switching converter with high voltage for high step-up/down and high power applications. Compared to the conventional boost converter the proposed converter can achieve approximately doubled voltage gain using the same duty cycle. The voltage ratings of the switch and diode are reduced to half, which result in the use of devices with lower $R_{DS(ON)}$ and on drop leading to reduced conduction losses. Also, voltage ratings of the passive components are reduced, and therefore the total energy volume is reduced to half. Further, the switch is turned on with ZVS in the CCM operation which results in negligible surge caused leading to reduced switching losses. The validity of the proposed converter is proved through a 10kW prototype.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제13권6호
• /
• pp.622-634
• /
• 2013

The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be observed that ISE-SON based inverter shows better performance in terms of Voltage Transfer Characteristics, noise margin, switching current, inverter gain and propagation delay. The reliability issues of the various devices in terms of supply voltage, temperature and channel length variation has also been studied in the present work. Logic circuits (such as NAND and NOR gate) and ring oscillator are also implemented using different architectures to illustrate the capabilities of ISE-SON architecture for high speed logic circuits as compared to other devices. Results also illustrates that ISE-SON is much more temperature resistant than SON and ISE MOSFET. Hence, ISE-SON enables more aggressive device scaling for low-voltage applications.