• 제목/요약/키워드: high vacuum sublimation

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OTFT 특성향상을 위한 이온빔 정렬처리 통한 펜타센 분자의 비등방 정렬 (Organization of pentacene molecules using an ion-beam treatment for organic thin film transistors)

  • 김영환;김병용;김대현;한정민;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.116-116
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    • 2009
  • This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$ film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer.

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Characteristics of Carbon Tetrafluoride Plasma Resistance of Various Glasses

  • Choi, Jae Ho;Han, Yoon Soo;Lee, Sung Min;Park, Hyung Bin;Choi, Sung Churl;Kim, Hyeong Jun
    • 한국세라믹학회지
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    • 제53권6호
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    • pp.700-706
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    • 2016
  • Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

Surface Segregation of Hydroniums and Chlorides in a Thick Ice Film at Higher Temperatures

  • Lee, Du Hyeong;Bang, Jaehyeock;Kang, Heon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.263-263
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    • 2013
  • This work examines the dynamic properties of ice surfaces in vacuum for the temperature range of 140~180 K, which extends over the onset temperatures for ice sublimation and the phase transition from amorphous to crystallization ice. In particular, the study focuses on the transport processes of excess protons and chloride ions in ice and their segregative behavior to the ice surface. These phenomena were studied by conducting experiments with a relatively thick (~100 BL) ice film constructed with a bottom $H_2O$ layer and an upper $D_2O$ layer, with excess hydronium and chloride ions trapped at the $H_2O$/$D_2O$ interface as they were generated by the ionization of hydrogen chloride. The migration of protons, chloride ions, and water molecules to the ice film surface and their H/D exchange reactions were measured as a function of temperature using the methods of low energy sputtering (LES) and Cs+ reactive ion scattering (RIS). Temperature programmed desorption (TPD) experiments monitored the desorption of water and hydrogen chloride from the surface. Our observations indicated that both hydronium and chloride ions migrated from the interfacial layer to segregate to the surface at high temperature. Hydrogen chloride gas desorbs via recombination reaction of hydronium and chloride ions floating on the surface. Surface segregation of these species is driven by thermodynamic potential gradient present near the ice surface, whereas in the bulk, their transport is facilitated by thermal diffusion process. The finding suggests that chlorine activation reactions of hydrogen chloride for polar stratospheric ice particles occur at the surface of ice within a depth of at most a few molecular layers, rather than in the bulk phase.

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(${\alpha}-Naphthyl$ Group이 치환된 안트라센 염료의 전계발광 특성 (Electroluminescent Properties of Anthracene-Based Dye with ${\alpha}-Naphthylethenyl$ Subsituent)

  • 김홍수;이동규;남기대
    • 한국응용과학기술학회지
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    • 제16권2호
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    • pp.127-133
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    • 1999
  • New electroluminescent materials base on anthracene chromophore, [9.10-bis(${\alpha}$-naph -thylethenyl) anthracene (${\alpha}$-BNA)] were newly synthesized. The anthracene derivatives with bulky substituent possessed high melting point and they gave stable amorphous films through vacuum - sublimation methods. Three types of electroluminescent devices were fabricated with double layer and triple layer structure : ITO/TPD/emission layer/MgAg, ITO/emission layer/ OXD-7 and ITO/ TPD/ emission layer/OXD-7/MgAg, respectively. In three types of devices with the emissive layer of ${\alpha}$-BNA, efficient orange electroluminescence was observed. In the triple layer device whit a emitting layer of 20 nm thickness , maximum luminance was about 10000 cd/ $m^2$ at an applied voltage of 10v and maximum external quantum efficiency was 1.0%.

Electroluminescent Properties of Anthracene Chromophore with Naphthylethenyl Substituents

  • Kim, Hong-Soo;Jeong, Noh-Hee
    • 한국응용과학기술학회지
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    • 제21권1호
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    • pp.24-30
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    • 2004
  • New electroluminescent materials based on anthracene chromophore with naphthylethenyl substituent, 9,10-bis($\alpha$-naphthylethenyl)anthracene (a-BNA), as well as four kinds of its derivatives were synthesized, and luminescent properties of these materials were investigated. Electrolumineecent(EL) emission band was discussed based on their substituent structure differences. It was found that the emission band strongly depends on the molecular structure of introduced substituent. It can be tuned from 557 nm to 591 nm by changing the substituent structures. On the other hand, the anthracene chromophore with bulky substituent possessed high melting point and they gave stable films through vacuum-sublimation. The double layer EL device of ITO/TPD/emission layer/Mg:Ag was employed, and exhibited efficient orange light originating from emitting materials. EL emission with a maximum luminance was observed in the b-BNA emitting material, : maximum luminance was about 8,060 cd $m^{-2}$ at an applied voltage of 10 V and current density of 680 $mA/cm^2$. In conclusion, the electroluminescent properties also showed good difference with their substituent structure.

Growth and characterization of $Cu_2ZnSnSe_4$ (CZTSe) thin films by sputtering of binary selenides and selenization

  • Munir, Rahim;Jung, Gwang-Sun;Ahn, Byung-Tae
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.98.2-98.2
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    • 2012
  • Thin film solar cells are growing up in the market due to their high efficiency and low cost. Especially CdTe and $CuInGaSe_2$ based solar cells are leading the other cells, but due to the limited percentage of the elements present in our earth's crust like Tellurium, Indium and Gallium, the price of the solar cells will increase rapidly. Copper Zinc Tin Sulfide (CZTS) and Copper Zinc Tin Selenide (CZTSe) semiconductor (having a kesterite crystal structure) are getting attention for its solar cell application as the absorber layer. CZTS and CZTSe have almost the same crystal structure with more environmentally friendly elements. Various authors have reported growth and characterization of CZTSe films and solar cells with efficiencies about 3.2% to 8.9%. In this study, a novel method to prepare CZTSe has been proposed based on selenization of stacked Copper Selenide ($Cu_2Se$), Tin Selenide ($SnSe_2$) and Zinc Selenide (Zinc Selenide) in six possible stacking combinations. Depositions were carried out through RF magnetron sputtering. Selenization of all the samples was performed in Close Space Sublimation (CSS) in vacuum at different temperatures for three minutes. Characterization of each sample has been performed in Field Emission SEM, XRD, Raman spectroscopy, EDS and Auger. In this study, the properties and results of $Cu_2ZnSnSe_4$ thin films grown by selenization will be presented.

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FRICTION UNITS FOR THE MOON

  • Drozdov, Yu.N.
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.389-396
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    • 2002
  • In XXI century it is necessary to expect the recommencement and development of activities on mastering the Moon. In the long term it is construction of manned lunar bases with industrial, astrophysical, procuring, repair equipment and services. Interplanetary flights from the Moon demand smaller power expenditures, than from the Earth, therefore it is favourable to use its surface for the construction of space-vehicle launching sites. Flights of devices in libration points in the system 'Earth - Moon' are considered. Experience of engineering system creation for the Moon displays the great complexity in provision of serviceability and reliability of friction units. Open friction units should operate under following conditions on the Moon: pressure of environment (vacuum) $p\;>10\;^{-10}$ Pa; wide range of temperature change $+150^{\circ}C\;...170^{\circ}C$; high evaporability of lubricants; influence of temperature gradients and warping of constructions; sublimation of elements of constructional materials; irradiation of different physical nature; effect of micrometeorites; reduced gravitation; influence of abrasive particles of lunar ground; requirements on minimization of size and weight characteristics of a construction (high tension); undesirability (impossibility) of application of liquid and plastic lubricants; vibration, shock, acoustic loadings during start and landings to the Earth; difficulties in repair-regenerative operations in conditions of the Moon etc. Adhesive interaction of conjugated surfaces is the principal reason of possible failures of rubbed units on the Moon. In the research of the Moon automatic interplanetary stations of 'Luna' (USSR), 'Surveyer', 'Apollo' (USA) series were used. Stations executed functions of flying, landing, artificial satellites of the Moon, moon-rovers and manned spacecrafts such as 'Apollo'. The experimental- theoretical researches carried out in the sixtieth years on tribology for conditions of the Moon appeared to be rather useful to engineering of an outer space exploration and the decision of complex problems for the friction units operating in extreme conditions on the Earth. For the creation of highly loaded friction units for the long service life on the Moon it is required not only to use accumulated experience and designed technologies, but also to carry out wide scientific research.

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묵은 배추김치의 휘발성 성분 특성 (Characterization of Volatile Compounds in Low-Temperature and Long-Term Fermented Baechu Kimchi)

  • 김지윤;박은영;김영석
    • 한국식생활문화학회지
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    • 제21권3호
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    • pp.319-324
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    • 2006
  • 묵은 배추김치의 휘발성 성분들을 고진공승화법을 이용하여 분리, 농축하였으며, GC-MS로 분석하였다. 총 62가지의 휘발성 성분들이 검출되었으며, 7개의 sulfur-containing compounds, 8개의 terpenes, 5개의 esters, 8개의 acids, 15개의 alcohols, 2개의 nitriles, 2개의 ketones, 11개의 aliphatic hydrocarbons, 4개의 miscellaneous compounds등으로 구성되어 있었다. 이 중 특히, acids인 acetic acid와 butanoic acid가 높은 함량을 나타내었다. 묵은 배추김치에서 향기활성성분을 규명하기 위해 고진공승화법을 이용하여 휘발성 성분들을 분리 및 농축 후 향 추출물 희석분석법으로 flavor dilution(FD) factor($Log_3FD$)를 구하였으며, GC-MS 및 GC-Olfactometry(GC-O)법으로 휘발성 성분들을 동정하였다. 이 결과 묵은 배추김치에서 총 16종의 화합물이 검출되었다. 이중 시큼한 냄새, 군덕내의 특성을 지닌 acetic acid, butanoic acid가 높은 FD factor를 보였으며, acids외에 높은 (FD > 9)를 나타내는 성분들로는 linalool, 2-vinyl-4H-1,3-dithin 등이 있었다.

반다공성 재질에 유류된 지문의 CA 훈증 후 p-dimethylaminobenzealdehyde(DMAB) 형광시약 적용 시 표면적과 주변 온도, 기압이 형광착색에 미치는 효과에 관한 연구 (Enhancement of cyanoacrylate-developed marks using p-dimethylaminobenzaldehyde (DMAB) on semi-porous surfaces and analysis of the influence factors on fluorescence intensity)

  • 유제설;김주하
    • 분석과학
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    • 제27권4호
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    • pp.187-195
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    • 2014
  • 잠재지문이 유류된 배경과 지문과의 대조비를 높이기 위한 증강작업 시에 잠재지문의 훼손을 최소화하는 것은 매우 중요하다. 본 실험은 반다공성 표면에 유류된 잠재지문을 시아노아크릴레이트 훈증 처리 후 p-dimethylaminobenzealdehyde (DMAB) 증강시약을 사용하여 그 효과를 확인하고, 증강효과에 미치는 환경적 요인을 분석한 것이다. 실험에 사용된 모든 지문은 시아노아크릴레이트 진공 훈증 후 실온에서 24 시간 건조해 사용하였다. 시아노아크릴레이트 훈증물의 DMAB 형광염색을 위해 표면적, 온도, 기압을 달리한 조건에서 12 시간 단위로 48 시간 동안 승화시켰다. 표면적 영향에 대한 실험에서 물질의 입자크기와 용기의 크기는 DMAB의 승화속도와 형광세기에 영향을 주었다. 또한 무용매접촉법을 적용한 DMAB 형광염색은 36 시간 승화 후 최대 형광세기를 보였고, 일정 표면적 이상에서는 형광세기에 미치는 영향이 저조하였다. 온도에 관한 실험에서 DMAB는 $20^{\circ}C$의 실온에서 가장 잘 승화하였고, 최대형광 세기를 얻을 수 있는 승화시간이 48 시간에서 36 시간으로 단축되었다. 또한 $30^{\circ}C$이상의 상온에서는 오히려 적정 형광세기를 나타내는 승화시간이 길어지고, 형광세기에 미치는 영향도 미약했다. 또한 압력에 관한 실험에서는 압력의 변화가 매우 크지 않는 이상 형광세기가 비진공상태에서의 형광세기보다 약했다.

스퍼터링 증확 CdTe 박막의 두께 불균일 현상 개선을 위한 화학적기계적연마 공정 적용 및 광특성 향상 (Application of CMP Process to Improving Thickness-Uniformity of Sputtering-deposited CdTe Thin Film for Improvement of Optical Properties)

  • 박주선;임채현;류승한;명국도;김남훈;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.375-375
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    • 2010
  • CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

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