• 센서학회지
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• 제24권4호
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• pp.219-223
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• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• 한국진공학회지
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• 제12권S1호
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• pp.88-91
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• 2003

Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.29-33
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• 2015

This paper presents the results of the optical characteristics of ITO thin film with different buffer layer thicknesses of $SiO_2$ and $Nb_2O_5$ for touch sensor application. $SiO_2$ and $Nb_2O_5$ buffer layers were deposited using RF magnetron sputtering equipment. The buffer layers were inserted between glass and ITO layers. In order to compare with the experimental results, the Essential Macleod Program (EMP) was adopted. Based on EMP simulation, the [$Nb_2O_5{\mid}SiO_2{\mid}ITO$] multi-layered thin film exhibited high transmittance of more than 85% in the visible region. The actual experimental results also showed transmittance of more than 85% in the visible region, indicating that the simulated results were well matched with the experimental results. The sheet resistance of ITO based film was about $340{\Omega}/sq$. The surface roughness maintained a relatively small value within the range of 0.1~0.4 nm when using the $Nb_2O_5$ and $SiO_2$ buffer layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.114-114
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• 2010

In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

• 한국표면공학회지
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• 제38권4호
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• pp.150-155
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• 2005

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.62.1-62.1
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• 2011

The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

• 한국진공학회지
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• 제7권1호
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• pp.43-50
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• 1998

원격플라즈마화학증착(RPCVD)에 의하여 파이렉스 유리 기판 위에 투명전도성 산화 주석막을 제조하였다. RPCVD공정의 주요한 조절변수는 증착시간, 사메틸주석, 산소 및 아 르곤의 유속, 라디오 주파수 출력, 및 기판온도를 포함했다. 양질의 산화주석막을 제조하고 RPCVD공정을 보다 잘 이해하기 위하여 이들 파라미터에 대한 증착속도, 전기적 저항, 광 학적 투과도 및 결정구조의 의존성을 체계적으로 살펴보았다. 산화주석막의 성질에 미치는 이들 파라미터의 영향은 복잡하게 서로 연관되어 있다. 최적화된 증착조건에서 제조된 산화 주석막은 102$\AA$/min의 증착속도, $9.7\times 10^{-3}\Omega$cm의 비저항 및 ~80%의 가시선 투과도를 나 타냈다.

• 한국염색가공학회지
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• 제18권6호
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• pp.49-56
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• 2006

Surface treatment using UV irradiation was carried out to improve optical properties of polarizing films. The effects of UV energy of the UV-treated PVA films were investigated by measuring reflectance, surface roughness, contact angles, ESCA, and ATR. Reflectance decreased at wavelength of 450 nm or less and surface roughness increased with increasing UV energy. Water contact angle increased in the irradiated PVA films and surface energy decreased with increase in w energy. An analysis showed that the OH groups were broken and some new groups were introduced such as C=C and C=O bonds together with increased $O_{1s}/C_{1s}$, resulting in the observed surface modification effect. Surface modified PVA polarizing films showed improvement in light transmittance of polarizing films at high wavelength region without deteriorating polarization efficiency, which was not affected by UV irradiation sequence during manufacturing processes such as coloring and drawing.

• 한국표면공학회지
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• 제40권3호
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• pp.144-148
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• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.