• Journal of Chest Surgery
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• v.12 no.3
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• pp.289-296
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• 1979

For years, physicians and anatomists have been interested in the heart that has one functioning ventricle. Various terms have been suggested for this entity including single ventricle, common ventricle, double-inlet left ventricle, cor biatriatum triloculare, and primitive ventricle. In this report, the term "single ventricle" is utilized as suggested by Van Praagh, and is defined as that congenital cardiac anomaly in which a common or separate atrioventricular valves open into a ventricular chamber from which both great arterial trunks emerge. An outlet chamber, or infundibulum, may or may not be present and give rise to the origin of either of the great arteries. This definition excludes the entity of mitral and tricuspid atresia. An 11 year old cyanotic boy was admitted chief complaints of exertional dyspnea and frequent upper respiratory infection since 2 weeks after birth. He was diagnosed as inoperable cyanotic congenital heart disease, and remained without any corrective treatment up to his age of 11 year when he suffered from aggravation of symptoms and signs of congestive heart failure for 2 months before this admission. On 22nd of May 1979, he was admitted for total corrective operation under the impression of tricuspid atresia suggested by a pediatrician. Physical check revealed deep cyanosis with finger and toe clubbing, and grade V systolic ejection murmur with single second heart sound was audible at the left 3rd intercostal space. Development was moderate in height [135 cm] and weight[28Kg]. Routine lab findings were normal except increased hemoglobin [21.1gm%], hematocrit [64 %], and left axis deviation with left ventricular hypertrophy on EKG. Cardiac catheterization and angiography revealed 1-transposition of aorta, pulmonic valvular stenosis, double inlet of a single ventricle with d-loop, and normal atriovisceral relationship [Type III C solitus according to the classification of Van Praagh]. At operation, longitudinal incision at the outflow tract of right ventricle in between the right coronary artery and its branch [LAD from RCA] revealed high far anterior aortic valve which had fibrous continuity with mitral annulus, and pulmonic valve was stenotic up to 4 mm in diameter positioned posterolaterally to the aorta. Ventricular septum was totally defective, and one markedly hypertrophied moderator band originated from crista supraventricularis was connected down to the imaginary septum of the ventricular cavity as a pseudoseptum of the ventricle. Size of the defect was 3X3 cm2 in total. Patch closure of the defect with a Teflon felt of 3.5 x 4 cm2 was done with interrupted multiple sutures after cut off of the moderator band, which was resutured to the artificial septum after reconstruction of the ventricular septum. Pulmonic valvotomy was done from 4 mm to 11 mm in diameter thru another pulmonary arteriotomy incision, and right ventriculotomy wound was closed reconstructing the right ventricular outflow tract with pericardial autograft of 3 x 4 cm2. Atrial septal defect of 2 cm in diameter was closed with 3-0 Erdeck suture, and atrial wall was sutured also when rectal temperature reached from 24`C to 35.5`C. Complete A-V block was managed with temporary external pacemaker with a pacing rate of 110/min. thru myocardial wire, and arterial blood pressure of 80/50 mmHg was maintained with Isuprel or Dopamine dripping under the CVP of 25-cm saline. Consciousness was recovered one hour after the operation when his blood pressure reached 100 /70 mmHg, but vital signs were not stable, and bleeding from the pericardial drainage and complete anuria were persisted until his heart could not capture the pacemaker impulse, and patient died of low output syndrome 320 min after the operation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.11
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• pp.1011-1020
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• 2017

This study was conducted to investigate the material properties of stainless steel 316L specimens of untreated and UNSM treated material, hydrogen attacked material(100 bar, $300^{\circ}C$ at 120 h) and UNSM treated hydrogen attacked material at room temperature. Results demonstrated that the hydrogen attacked materials showed a tendency toward a slightly decreased fatigue strength, while the hydrogen embrittlement effect was smaller than the S-N curve of conventional untreated material. As compared to untreated material, the fatigue limit of the UNSM treated material increased by 43.8%, while it was 57.1％ higher in the UNSM treated hydrogen attacked material than in untreated hydrogen attacked material. The plastic deformation layer was ${\sim}152{\mu}m$ thick, as confirmed by maps showing the level of local plastic deformation affected by the UNSM treatment in three ways: an image quality map, inverse pole figure map, and kernel average misorientation map captured via electron back scatter diffraction. Owing to hydrogen embrittlement, about 90％ of surface cracks were smaller than the average grain size of $35{\mu}m$.

• Applied Biological Chemistry
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• v.40 no.2
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• pp.134-138
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• 1997

The objective of this study was to examine the effect of phosphorus deficiency on nitrogen fixation and photosynthesis of nitrogen fixing soybean plant under $CO_2$ enrichment condition. The soybean plants(Glycine max [L.] Merr.) inoculated with Bradyrhizobium japonicum MN 110 were grown with P-stressed(0.05 mM-P) and control(1 mM-P) treatment under control$(400\;{\mu}l/L\;CO_2)$ and enrichment$(800\;{\mu}l/L\;CO_2)$ enviromental condition in the phytotron equipped with high density lamp$(1000\;{\mu}Em^{-2}S^{-1})$ and $28/22^{\circ}C$ temperature cycle for 35 days after transplanting(DAT). At 35 DAT, phosphorus deficiency decreased total dry mass by 64% in $CO_2$ enrichment condition, and 51% in control $CO_2$ condition. Total leaf area was reduced significantly by phosphorus deficiency in control and enriched $CO_2$ condition but specific leaf weight was increased by P deficiency. Phosphorus deficiency significantly reduced photosynthetic rate(carbon exchange rate) and internal $CO_2$ concentration in leaf in both $CO_2$ treatments, but the degree of stress was more severe under $CO_2$ enrichment condition than under control $CO_2$ environmental condition. In phosphorus sufficient plants, $CO_2$ enrichment increased nodule fresh weight and total nitrogenase activity(acetylene reduction) of nodule by 30% and 41% respectively, but specific nitrogenase activity of nodule and nodule fresh weight was not affected by $CO_2$ enrichment in phosphorus deficient plant at 35 DAT. Total nitrogen concentrations in stem, root and nodule tissue were significantly higher in phosphorus sufficient plant grown under $CO_2$ enrichment, but nitrogen concentration in leaf was reduced by 30% under $CO_2$ enrichment. These results indicate that increasing $CO_2$ concentration does not affect plant growth under phosphorus deficient condition and phosphorus stress might inhibit carbohydrate utilization in whole plant and that $CO_2$ enrichment could not increase nodule formation and functioning under phosphorus deficient conditions and phosphorus has more important roles in nodule growth and functioning under $CO_2$ enrichment environments than under ambient condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Membrane Journal
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• v.30 no.3
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• pp.173-180
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• 2020

As the demand for fossil fuels continues to increase worldwide, carbon dioxide (CO₂) concentration in the air has increased over the centuries. The way to reduce CO₂ emissions to the atmosphere, carbon capture and sequestration (CCS) technology have been developed that can be applied to power plants and factories, which are primary emission sources. According to the climate change mitigation policy, direct air capture (DAC) in air, referred to as "negative emission" technology, has a low CO₂ concentration of 0.04%, so it is focused on adsorbent research, unlike conventional CCS technology. In the DAC field, chemical adsorbents using CO₂ absorption, solid absorbents, amine-functionalized materials, and ion exchange resins have been studied. Since the absorbent-based technology requires a high-temperature heat treatment process according to the absorbent regeneration, the membrane-based CO₂ capture system has a great potential Membrane-based system is also expected for indoor CO₂ ventilation systems and immediate CO₂ supply to smart farming systems. CO₂ capture efficiency should be improved through efficient process design and material performance improvement.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.398-402
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• 2000

Three kinds of $Al_3Ti-Cr$ alloys, namely, $Al_{67}Ti_{25}Cr_8,\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{59}Ti_{26}Cr_{15}$, were prepared by induction melting followed by the thermomechanical treatment. The corrosion behavior in 3.5% NaCl solution and the high-temperature oxidation behavior at 1000, 1100 and $1200^{\circ}C$ for the prepared alloys were investigated. Electrochemical results indicated increased resistance to localized corrosion with increasing Cr content. Cr additions were found to prevent passive film from undergoing brittle fracture. XPS results revealed the passive films of $Al_3Ti-Cr$ alloys were composed mainly of $Al_2O_3$ that coexisted with $TiO_2$ and $Cr_2O_3$. The overall oxidation resistance of the prepared alloys were excellent. Specifically, the oxidation resistance increased in the order of $Al_{59}Ti_{26}Cr_{15},\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{67}Ti_{25}Cr_8$. As the Al content in the base alloys increased, the $Al_2O_3$ formation was facilitated leading to the increased oxidation resistance.

• Applied Chemistry for Engineering
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• v.27 no.6
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• pp.633-638
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• 2016

In this study, we used three kinds of commercially available cation, anion, and mixed-ion exchange resins to separate radioactive ions from a polluted water containing Cs, I, and other radioactive ions. The experiment was conducted at a room temperature with a batch method, and a comparative analysis on the decontamination ability of each resin for the removal of Cs and I was performed by using different quantities of resins. The concentration was analyzed using ion chromatography and the ion exchange resin product from company D showed an overall high ion exchange ability. However, for most of the experiments when the amount of ion exchange resin was decreased, the decontamination ability of the resins against mass increased. When the mass of company D's cation exchange resin was small, the ion exchange ability against Cs and I ions were measured as 0.199 and 0.344 meq/g, respectively. When the mixed ion exchange resin was used, the ion exchange ability against I ions was measured as 0.33 meq/g. All in all, company D's ion exchange resins exhibited a relatively higher ion exchange ability particularly against I ions than that of other companies' exchange ions.

• Korean Journal of Food Science and Technology
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• v.33 no.3
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• pp.333-337
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• 2001

The effect of roasting of Omija (Schizandra chinensis Baillon) on the physicochemical properties and the sensory quality of the extract was investigated in order to improve the quality of Omija beverage. The response surface methodology was introduced to optimize the roasting condition of Omija based on the sensory quality of the extract. The titratable acidity, the soluble solid content and the reducing sugar content of the extract increased with a mild roasting, but decreased with an excessive roasting. Prolonged roasting at high temperature decomposed red pigment making the color of the extract lighter, less red and less yellow. A mild roasting of Omija improved the sensory quality of the extract, and the highest sensory quality of the extract was provided with the roasting at $180^{\circ}C$ for 10 min, indicating the optimum roasting condition of Omija. The extract of the roasted Omija was superior in sensory properties to that of the unroasted one.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.7 no.12
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• pp.1063-1069
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• 1997

For me1t-spun Fe-Nd-C alloys, variation of phase development and magnetic properties with the variety of alloy compositions and production conditions were investigated. To find out whether hard magnetic $Fe_{14}Nd_2C$ is crystallized direct1y from the melt by rapid quenching, the phase development of the as-spun ribbons spun at various speed was a1so studied. For the ribbons spun at 10m/s, ${\alpha}-Fe$ was the primary crystallization phase followed by the secondary $Fe_{17}Nd_2C$. At 20m/s ${\alpha}-Fe$ was suppressed so that the primary $Fe_{17}Nd_2C$ coexisted with the secondary ${\alpha}-Fe$ and the amorphous phase. Above 30m/s the ribbons were a1most amorphous, and the amorphization was complete at 40m/s. $Fe_{14}Nd_2C$ therefore was not found in as-spun state but obtained after heat treating the ribbons. The effective temperature range ($700{\sim}900^{\circ}C$) in which $Fe_{14}Nd_2C$ can be obtained was wider than that of a cast alloy. An alloy made with the wheel speed of 20 or 30m/s yielded higher coercivities after heat treatment. In iron-rich Fe-Nd-C, the composition range in which a high coercivity (more than 10kOe) is expected is narrow, i.e., 77~78 Fe and 7~8 C(at.%).