• Journal of the Korean Electrochemical Society
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• v.7 no.2
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• pp.108-123
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• 2004

Imaging of surfaces and structures by near-field scanning optical microscopy (NSOM) has matured and is routinely used for studies ranging from biology to materials science. Of interest in this review paper is a versatility of modified or multi-functional NSOM (mf-NSOM) to enable high resolution imaging in several modes: (1) Concurrent fluorescence and Topographical Imaging (gases) (2) Microspectroscopy (gases) (3) Concurrent Scanning Electrochemical and Topographical Imaging (SECM) (liquids) (4) Concurrent Photoelectrochemical and Topographical Imaging (PEM) (liquids) The present study will summarize some of the recent advances in mf-NSOM work confirmed and supported by the results from several other imaging techniques of optical, fluorescence, electron and electrochemical microscopy. The studies are directed at providing local information on pitting precursor sites and vulnerable areas on metal and semiconductor surfaces, and at reactive sites on heterogeneous, catalytic substrates, especially on Al 2024 alloy and polycrystalline Ti. In addition, we will introduce some results related to the laser-induced nanometal (Ag) synthesis using mf-NSOM.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1128-1132
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• 2014

A kinetic study on aminolysis of 4-chloro-2-nitrophenyl X-substituted-benzoates (6a-i) in MeCN is reported. The Hammett plot for the reactions of 6a-i with piperidine consists of two intersecting straight lines, while the Yukawa-Tsuno plot exhibits an excellent linear correlation with ${\rho}_X$ = 1.03 and r = 0.78. The nonlinear Hammett plot is not due to a change in rate-determining step (RDS) but is caused by the resonance stabilization of substrates possessing an electron-donating group in the benzoyl moiety. The Br${\phi}$nsted-type plot for the reactions of 4-chloro-2-nitrophenyl benzoate (6e) with a series of cyclic secondary amines is linear with ${\beta}_{nuc}$ = 0.69, an upper limit for reactions reported to proceed through a concerted mechanism. The aminolysis of 6e in aqueous medium has previously been reported to proceed through a stepwise mechanism with a change in RDS on the basis of a curved Br${\phi}$nsted-type plot. It has been concluded that instability of the zwitterionic tetrahedral intermediate ($T^{\pm}$) in MeCN forces the reaction to proceed through a concerted mechanism. This is further supported by the kinetic result that the amines used in this study are less reactive in MeCN than in $H_2O$, although they are more basic in MeCN over 7 $pK_a$ units.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.62-68
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• 2000

Ultra thin TiN films (50∼700nm thickness) were deposited on AISI 304 stainless steel substrates using a reactive DC magnetron sputtering deposition process to investigate their wear and friction properties. Dry sliding wear tests of the films were carried out against hardened steel and alumina counterparts using a pin-on-disk type wear tester at room temperature. Variation of friction coefficient was measured as a function of film thickness, load, sliding speed and roughness of the substrate. Worn surfaces of the film were examined by a scanning electron microscope. Wear resistance of the TiN film increased with the increase of the film thickness. The TiN film showed relatively high wear resistance in spite of its ultra thin thickness when it is mated by the steel counterpart, while it showed poor wear resistance with the alumina counterpart. The good wear resistance with the steel counterpart was explained by the formation of oxide layers on the film surface and sound interface character between the ultra thin film and the substrate.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.519-523
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• 2003

We report the synthesis of cubic spinel $ZnCo_2$$O_4$thin films and the tunability of the conduction type by control of the oxygen partial pressure ratio. Zinc cobalt oxide films were grown on$ SiO_2$(200 nm)/Si substrates by reactive magnetron sputtering method using Zn and Co metal targets in a mixed Ar/$O_2$atmosphere. We found from X-ray diffraction measurements that the crystal structure of the zinc cobalt oxide films grown under an oxygen-rich condition (the $O_2$/Ar partial pressure ratio of 9/1) changes from wurtzite-type $Zn_{1-x}$ $Co_{X}$O to spinel-type $ZnCo_2$$O_4$with the increase of the Co/Zn sputtering ratio,$ D_{co}$ $D_{zn}$ . We noted that the above structural change accompanied by the variation of the majority electrical conduction type from n-type (electrons) to p-type (holes). For a fixed $D_{co}$ $D_{zn}$ / of 2.0 yielding homogeneous spinel-type $_2$O$ZnCo_4$films, the type of the majority carriers also varied, depending on the$ O_2$/Ar partial pressure ratio: p-type for an $O_2$-rich and n-type for an Ar-rich atmosphere. The maximum electron and hole concentrations for the Zn $Co_2$ $O_4$films were found to be 1.37${\times}$10$^{20}$ c $m^{-3}$ and 2.41${\times}$10$^{20}$ c $m^{-3}$ , respectively, with a mobility of about 0.2 $\textrm{cm}^2$/Vs and a high conductivity of about 1.8 Ω/$cm^{-1}$ /.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.343-348
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• 2003

Indium tin oxide (ITO) thin films (170 nm) were grown by DC magnetron sputtering deposition on Coming glass substrates without a post annealing. The electrical transport and optical properties of the films have been investigated as a function of deposition temperature $T_{s}$ (10$0^{\circ}C$$\leq$ $T_{s}$$\leq$35$0^{\circ}C$) and oxygen partial pressure $P_{o_{2}}$, (0 $P_{o_{2}}$ $\leq$ 10$^{-5}$ torr). Films were deposited from a high density (99% of theoretical density) ITO target (I $n_2$ $O_3$: Sn $O_2$= 90 wt% : 10 wt%) made of ITO nano powders. With an increase of $T_{s}$ the electrical resistivity p of ITO thin films was found to decrease, but the mobility $\mu$$_{H}$ was found to increase. The carrier density nu shows the maximum value of 6.6$\times$10$^{20}$ /㎤ at $T_{s}$ = 30$0^{\circ}C$. At fixed Is, with an increase of the oxygen partial pressure, $n_{H}$ and $\mu$$_{H}$ were found to decrease, but p was found to increase. The minimum resistivity and maximum mobility values of the ITO films were found to be 0.3 mΩ.cm and 39.3 $\textrm{cm}^2$/V.s, respectively. The visible transmittance of the ITO films was above 80%.. 80%..