• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.257-259
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• 1987

The photoelectronic properties of CdTe films sintered with various amounts of $CdCl_2$ and $CuCl_2$ have been investigated by measurements of dark electrical resistivity, photocurrent, thermoelectric power, optical transmission and by observation of microstructure. The grain size and optical transmission of sintered CdTe films increase with increasing amount of $CdCl_2$ indicating that $CdCl_2$ acts as a sintering aid. The photoconductivity gain(A-$cm^2/W$) increases and resistivity($\Omega$-cm) decreases with increasing amount of $CuCl_2$ up to 100ppm due to the occurance of Cu-doping during sintering. The dark resistivity could be reduced farther by post heat treatments. The dark resistivity was still high($10^3{\Omega}$-cm) so that the accurate determination of the hole concentration by Hall measurement or by thermoelectric power measurement was not possible. From the analysis of electrical activation energy, however it can be concluded that the hole concentration is less than $10^{14}/cm^3$ and all grains are depleted of carrier by the trapping centers at grain boundaries.

• Journal of the Korean institute of surface engineering
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• v.30 no.6
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• pp.406-411
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• 1997

Transparent conductive thin films have found many applications in active and passive electronic and opto-electronic devices such as flat panel display electrode, solar cell electrode and window heat mirror, etc. Low resistivity and high transmittance of these films can beotained by controlling deposition parameters which are oxygen partial pressure, substrate temperature and dopant concentration. In this study, non-stoichiometric and Sb-doped thin electrical properties of undoped films have been degraded with increase of substrate temperature and optical properties have been improved in Sb-doped films. The resistivity of $2.5\times10^{-3}\Omega\textrm{cm}$,/TEX>, average transmittance of 80% and sheet resistance of 130$\Omega$/$\square$ at thickess of 2000 $\AA$ could be obrained at optmal condimal conditions which were at $400^{\circ}C$ of substrate temperature, 58% of oxygen partial pressure and 5% of Sb doping concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• Advances in environmental research
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• v.5 no.1
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• pp.61-77
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• 2016

$NanoTiO_2$ was synthesized by ultrasonication assisted sol-gel process and subjected to iron doping and carbon-iron codoping. The synthesized catalysts were characterized by XRD, HR-SEM, EDX, UV-Vis absorption spectroscopy and BET specific surface area analysis. The average crystallite size of pure $TiO_2$ was in the range of 30 - 33 nm, and that of Fe-$TiO_2$ and C-Fe $TiO_2$ was in the range of 7 - 13 nm respectively. The specific surface area of the iron doped and carbon-iron codoped nanoparticles was around $105m^2/g$ and $91m^2/g$ respectively. The coupled semiconductor photo-Fenton's activity of the synthesized catalysts was evaluated by the degradation of a cationic dye (C.I. Basic blue 9) and an anionic dye (C.I. Acid orange 52) with concurrent investigation on the operating variables such as pH, catalyst dosage, oxidant concentration and initial pollutant concentration. The most efficient C-Fe codoped catalyst was found to effectively destruct synthetic dyes and potentially treat real textile effluent achieving 93.4% of COD removal under minimal solar intensity (35-40 kiloLUX). This reveals the practical applicability of the process for the treatment of real wastewater in both high and low insolation regimes.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.180-184
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• 2003

Ce-doped $Y_2$SiO$_{5}$ phosphor particles of spherical morphology, fine size, high crystallinity and high photoluminescence (PL) intensity were prepared by spray pyrolysis. When nitrate precursor solution is adopted, hollow particles were formed by uneven drying rate between surface and inside of droplet. Citric acid and ethylene glycol were introduced as polymeric precursor to control the morphology of particles. When polymeric solution is adopted, polymeric chain is formed by the esterification reaction between carboxyl and hydroxy groups of citric acid and ethylene glycol, and considered as controlling the drying characteristics of droplet. $Y_2$$SiO_{5}$ :Ce phosphor particles prepared from polymeric precursor solution were spherical, filled, fine size and not agglomerate before and after post heat treatment. The optimum doping concentration of cerium was 0.5 mol% of overall solution concentration. The optimum amount of TBOS of high PL intensity and pure crystallinity of X2-type $Y_2$$SiO _{5}$ was 105% of stoichiometric amount. The PL intensity of $Y_2$X$/_{5}$ :Ce phosphor particles prepared using the polymeric precursor solution was 164% of that of the nitrate precursor solution due to homogeneous composition and good morphology.y.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.814-820
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• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.451-457
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• 2014

We developed a high-performance methane gas sensor based on a $SnO_2$ hollow hemisphere array structure of nano-thickness. The sensor structures were fabricated by sputter deposition of Sn metal over an array of polystyrene spheres distributed on a planar substrate, followed by an oxidation process to oxidize the Sn to $SnO_2$ while removing the polystyrene template cores. The surface morphology and structural properties were examined by scanning electron microscopy. An optimization of the structure for methane sensing was also carried out. The effects of oxidation temperature, film thickness, gold doping, and morphology were examined. An impressive response of ~220% was observed for a 200 ppm concentration of $CH_4$ gas at an operating temperature of $400^{\circ}C$ for a sample fabricated by 30 sec sputtering of Sn, and oxidation at $800^{\circ}C$ for 2 hr in air. This high response was enabled by the open structure of the hemisphere array thin films.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.833-836
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• 2005

Nano-gap trench is fabricated by the novel electrochemical etching technique using forward biased PN junction formed at the backside of the wafer. PN junction is formed using boron nitride wafer and the concentration of the boron doping is the high value of $1{\times}10^{19}$ $cm^{-3}$. The electro-chemical etching is performed in the 5% HF solution under the forward bias voltage of $1{\sim}2V$. The relationship between the etch rate of the trench and the voltage of the forward bias is investigated and the dependence of the gap for the voltage also examined. The etch rate increase from 0.027 ${\mu}m/min$ to 0.031 ${\mu}m/min$ as the value of the applied voltage increase from 1V to 2V, but the the gap is kept constant value of 40 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.984-987
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• 2003

The electrophosphorescent emission properties were investigated in polymer light-emitting diodes (PLEDs) based on a poly(9-vinylcarbazole) (PVK) doped with a green phosphorescent dye of fac-tris(2-phenylpyridine) iridium (III) [$Ir(ppy)_3$]. A green light peaked at 516 nm was emitted from devices with a configuration of ITO/PEDOT:PSS/PVK:$Ir(ppy)_{3}$/BCP/$Alq_{3}$/LiF/Al. The optimal doping concentration of $Ir(ppy)_{3}$ in PVK was found at 2% by weight, under which maximum current efficiency of 24.3 cd/A and peak external quantum efficiency of 6.8% were achieved at the high luminance of 4240 $cd/m^{2}$. The external quantum efficiency of 5% and current efficiency of 18 cd/A can be sustained even at the very high luminance of 35000 $cd/m^{2}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.57-60
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• 2002

In generally, the guest-emitter doped system has been reported to give a bright electroluminescence(EL). The purpose of using doped system is to improve for increasing lifetime and efficiency, and tuning multicolor light. This indicates an enhanced electron-hole recombination rate in emitting layer. The purpose of this study is to obtain the high performance EL devices for flat panel display with red emission. We fabricated EL devices using the guest-host system. where DCM derivatives were taken as a dopant. The devices are fabricated in multilayer system with various concentration of the dopant (red light emitting dye). We measured the I-V characteristics and EL spectra from these devices. and we compared with photoluminescence(PL) quantum yield among the DCM derivatives. The emission mechanism of devices is participated in energy transfer. The energy transfer from these hosts to DCM generates luminescence spectra that vary from yellow red to red, depending on DCM derivatives. Absorption and emission spectra of organic materials composing the devices depend on the emission materials doped with the DCM derivatives. We demonstrated that the high EL efficiency can be achieved by doping host material with DCM derivatives and molecular steric structures