• 한국재료학회지
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• 제9권5호
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• pp.484-490
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• 1999

Pt/SiOz!Si의 기판위에 $(Pb,La)TiO_3$(PLT) 박막을 졸-겔 방법으로 제작하여 La 첨가량 및 후속열처리 온도에 따른 결정학적, 전기적 특성율 조사하였다. $600^{\circ}C$ 이상의 온도에서 열처리된 PLT 박막 시료의 경우 La 도핑량에 관계없이 전형적인 perovskite 결정구조를 보여 주었다. La이 전혀 첨가되지 않은 $(Pb,La)TiO_3$(PT) 시료에 10 mole% La을 첨가할 경우 (PLT-I0 시료) c축 배향도는 약 63%에서 26%로 크게 감소하였다. PLT-1O 박막시료의 깊이에 따른 AES 분석결과 박막내의 각 성분원소 들이 비교척 균일하게 분포되어 았고 하부전극(Pt)과 PLT 박막층 사이에는 상호반응없이 비교적 안정된 막을 형성하고 있음을 알 수 있었다. $600^{\circ}C$에서 열처리된 PLT-1O 박막의 유전상수$({\varepsilon}r)$ 와 유전정접 (tan$\delta$) 은 약 193과 0.02의 값을 나타내였다. 후속열처리 온도를 $600^{\circ}C 에서 700^{\circ}C$로 증가함에 따라 잔류분극$(2Pr,Pr_+-Pr_-)$은 약 $4\muC\textrm{cm}^2 에서 약 16\muC\textrm{cm}^2$로 크게 증가하였으며 잔류 분극값의 증가는 후속열처리에 의해 결정성이 개선되었기 때문이라 판단된다. $30^{\circ}C$ 온도부근에셔 초전계수($\gamma$)는 약 $4.0nC/\textrm{cm}^2{\cdot}^{\circ}C$의 값을 냐타내었다.

• 한국표면공학회지
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• 제29권6호
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• KSBB Journal
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• 제21권2호
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• pp.151-156
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• 2006

본 연구에서는 용매증발법을 이용하여 대표적 생리활성 물질인 Vitamin-C의 불안정성을 극복하기 위하여 HP-${\beta}$-CD와의 포접복합체를 제조하고 수용액상에서의 안정성을 분석하였다. Vitamin-C와 HP-${\beta}$-CD 간의 몰비를 변화시켜 제조한 포접복합체의 안정성 시험 결과 포접 몰비는 1:1로 추정되며, 포접복합체 제조에 사용된 용매의 유전상수가 커질수록 Vitamin-C의 안정성이 향상되는 것을 확인할 수 있었다. 3차 증류수를 용매로 하여 제조된 포접복합체의 경우 순수한 Vitamin-C보다 Vitamin-C의 겉보기 1차 분해속도 상수 값이 감소하는 것을 확인하였는데 이는 결과적으로 Vitamin-C의 안정성이 향상되었음을 의미한다. 따라서 HP-${\beta}$-CD와의 포접복합체 형성은 Vitamin-C의 안정성을 향상시켜 생체이용률을 향상시킬 수 있음을 확인하였으며 불안정한 여러 생리활성물질에 적용할 수 있을 것으로 기대된다.

• 한국재료학회지
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• 제29권4호
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• pp.205-210
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• 2019

$Pb(Zr,Ti)O_3$ (PZT) is used for the various piezoelectric devices owing to its high piezoelectric properties. However, lead (Pb), which is contained in PZT, causes various environment contaminations. $(K,Na)NbO_3$ (NKN) is the most well-known candidate for a lead-free composition to replace PZT. A single crystal has excellent piezoelectric-properties and its properties can be changed by changing the orientation direction. It is hard to fabricate a NKN single crystal due to the sodium and potassium. Thus, $(Na,K)NbO_3-Ba(Cu,Nb)O_3$ (NKN-BCuN) is chosen to fabricate the single crystal with relative ease. NKN-BCuN pellets consist of two parts, yellow single crystals and gray poly-crystals that contain copper. The area that has a large amount of copper particles may melt at low temperature but not the other areas. The liquid phase may be responsible for the abnormal grain growth in NKN-BCuN ceramics. The dielectric constant and tan ${\delta}$ are measured to be 684 and 0.036 at 1 kHz in NKN-BCuN, respectively. The coercive field and remnant polarization are 14 kV/cm and $20{\mu}C/cm^2$.

• 한국구조물진단유지관리공학회 논문집
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• 제26권3호
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• pp.39-47
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• 2022

국내의 공동주택 보급률 증가에 따라 층간소음으로 인한 문제가 증가하고 있다. 이를 예방하기 위하여 바닥 충격음 차단 구조에 대한 수요가 높아지고 있으며 해당 구조에 대한 성능 인증이 이뤄지고 있지만 소음 차단 성능이 현장에서는 재현되지 않는다는 문제점이 있다. 해당 구조가 제 성능을 발휘하기 위해서는 일정 두께 이상의 마감 모르타르 타설이 필요하며, 해당 구조의 시공 적정성 판정을 위하여 GPR을 이용한 두께 측정 실험을 진행하였다. 본 연구에서 개발한 두께 측정 알고리즘은 측정된 데이터를 기반으로 상대유전율을 설정할 수 있어 정확한 두께 값을 측정할 수 있다. 네 종류의 바닥 충격음 차단 인증 구조에서 GPR 두께 측정 실험을 진행하였으며, GPR 데이터와 천공 측정 데이터 간 평균 오차는 1.95mm로 나타났다. 또한 마감재 유무가 측정값에 미치는 영향을 조사하기 위하여 총 3가지 종류의 마감재를 배치하고 실험을 진행으며, 평균 오차는 1.70mm로 나타났다. 추가적으로 장비의 샘플링 오차, 개발 알고리즘 변수, 천공 오차등을 종합적으로 고려하였을 때, GPR 계측 및 제안 알고리즘은 매우 높은 정확도로 슬래브 마감 모르타르의 두께 측정에 적용할 수 있음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.433-438
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• 2024

Piezoelectric ceramics play an important role in various electronic applications. However, traditional ceramics are difficult to be used in some complicated structures, due to their low flexibility and high brittleness. To solve this problem, this study prepared and investigated ceramic/polymer composites that can utilize a good flexibility of polymers. Polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) and 0.77(Bi_1/2Na_1/2)TiO₃-0.23SrTiO₃ (BNST23) ceramics were selected to fabricate the composites. Ceramic/polymer composites were prepared using various volume fractions of BNST23 ceramics. The distribution of piezoceramic particles in BNST23/PVDF-TrFE composites was investigated using optical microscopy (OM) and scanning electron microscopy (SEM). The dielectric and piezoelectric properties of the composites were significantly influenced by the volume fraction of the piezoelectric ceramics. As a result, the highest piezoelectric constant (d₃₃) of 56 pC/N was obtained in a composites with 70% volume fraction of BNST23 ceramics. Accordingly, it is expected that BNST23/PVDF-TrFE composites can be applied to various sensor applications.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.