• 제목/요약/키워드: high density energy beam

검색결과 147건 처리시간 0.026초

레이저 보조선삭 중 주철환봉 내부의 온도분포 예측에 관한 연구 (A study for prediction of temperature distribution in laser-assisted turning for rod-shaped cast iron)

  • 김관우;조해용;이제훈;서정;신동식
    • 한국레이저가공학회지
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    • 제13권2호
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    • pp.10-16
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    • 2010
  • Laser-assisted machining is dependent on absorbed energy density into workpiece. Generally, the absorptivity of laser beam is dependent on wave length of laser, materials, surface roughness, etc. Various shapes and energy densities for beam irradiation can be used to laser-assisted machining. In this thesis, efficient method of heat source modeling was developed and designed by using one fundamental experimental trials. And then, laser-assisted machining of rod-shaped cast iron was simulated by using commercial FEM code MARC. Simulations and experiments with various conditions were carried out to determine suitable condition of pre-heating for laser-assisted turning process. Temperature distribution of cutting zone could be predicted by simulation.

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9%Ni 강의 전자빔 용접성에 관한 연구 (I) - 전자빔 특성과 용입 - (A Study on the Electrom Beam Weldability of 9%Ni Steel (I) - Penetration and Electron Beam Characteristics -)

  • 김숙환;강정윤
    • Journal of Welding and Joining
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    • 제15권3호
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    • pp.79-87
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    • 1997
  • This study was performed to evaluate basic characteristics of electron beam welding process for a 9% Ni steel plate. The principal welding process parameters, such as working distance, accelerating voltage, beam current and welding speed were investigated. The AB (Arata Beam) test method was also applied to characterize beam size and energy density of the electron beam welding process. The electron beam size was found to decrease with the increase of accelerating voltage and the decrease of working distance. So, in case of high voltage (150kV), spot size and energy density of electron beam were revealed to be 0.9mm and $6.5\times10^5W/\textrm{cm}^2$ respectively. The accelerating voltage among the welding parameters was found to be the most important factor governing the penetration depth. When the accelerating voltage of electron beam was low ($\leq$90kV), beam current and welding speed did not affect on the penetration depth significantly. However, in case of high voltage ($\geq$120kV), the depth of penetration increased very sensitively with the increase of beam current and the decrease of welding speed.

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피코초 레이저의 공정변수에 따른 TSV 드릴링 특성연구 (Parametric Study of Picosecond Laser Hole Drilling for TSV)

  • 신동식;서정;김정오
    • 한국레이저가공학회지
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    • 제13권4호
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    • pp.7-13
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    • 2010
  • Today, the most common process for generating Through Silicon Vias (TSVs) for 3D ICs is Deep Reactive Ion Etching (DRIE), which allows for high aspect ratio blind holes with low surface roughness. However, the DRIE process requires a vacuum environment and the use of expensive masks. The advantage of using lasers for TSV drilling is the higher flexibility they allow during manufacturing, because neither vacuum nor lithography or masks arc required and because lasers can be applied even to metal and to dielectric layers other than silicon. However, conventional nanosecond lasers have the disadvantage of causing heat affection around the target area. By contrast, the use of a picosecond laser enables the precise generation of TSVs with less heat affected zone. In this study, we conducted a comparison of thermalization effects around laser-drilled holes when using a picosecond laser set for a high pulse energy range and a low pulse energy range. Notably, the low pulse energy picosecond laser process reduced the experimentally recast layer, surface debris and melts around the hole better than the high pulse energy process.

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금속표면 특성향상을 위한 laser peening 효과 (The Laser Peening Effect for Improving the Surface Properties of Metals)

  • 정진만;백성훈;김정수;이상배
    • 한국레이저가공학회지
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    • 제11권3호
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    • pp.5-9
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    • 2008
  • The effect of a laser peening on the surface residual stress of SUS 304 was investigated using a second harmonic Nd:YAG laser beam. The energy density and the diameter of the laser beam were $400mJ/mm^2$ and about 1mm, respectively. According to the test results, the effect of a laser peening for improving the surface residual stress was not big enough to induce a high compressive stress on the SUS 304 surface. This is thought to be attributed to the small radius of the laser beam used in this study, even though its energy density is big enough. From this study, it can be concluded that to induce a recognizably high compressive stress on a metal surface, the energy density as well as the size (diameter) of the laser beam should be large enough to generate surface plasma with a high energy to have a big impact to a metal surface.

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레이저 출력에 따른 레이저예열선삭된 질화규소의 기계적 특성 (Mechanical Properties of Silicon Nitride Laser-Assisted Machined by Laser Power)

  • 김종도;이수진;신동식;서정;이제훈
    • 한국레이저가공학회지
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    • 제12권4호
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    • pp.12-16
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    • 2009
  • The engineering ceramic is one of the materials advantageous in various conditions with high strength, endurance at high temperature, abrasion resistance and corrosion resistance, etc. However, due to high strength and high brittleness, ceramic incurs high costs and long time on finishing process required after sintering. So a process for obtaining wanted measurements of them has been studied using the high temperature which makes ceramics softened and heat affected recently. This study makes an estimate of laser-assisted machining (LAM) if an economically practical process for manufacturing precision silicon nitride ceramic parts using laser beam. In this study, mechanical properties of silicon nitride at high temperature were observed. And during the LAM, it was observed that cutting force and tool wear were reduced and oxidation of machined surface was increased according to a increase of laser power.

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초단파 레이저 조사시 티슈 열완화 시간 분석 (Analysis of Thermal Relaxation Time of Tissues Subject to Pulsed Laser Irradiation)

  • 김경한;이제훈;서정
    • 한국레이저가공학회지
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    • 제12권2호
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    • pp.17-25
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    • 2009
  • Two methodologies for predicting thermal relaxation time of tissue subjected to pulsed laser irradiation is introduced by the calculation the optical penetration depth and by the investigation of the temperature diffusion behavior. First approach is that both x-axial and y-axial thermal relaxation times are predicted and they are superposed to achieve the thermal relaxation time (${\tau}_1$) for two-dimensional square tissue model. Another approach to achieve thermal relaxation time (${\tau}_2$) is measuring the time required for local temperature drop until $e^{-1}$ of the maximum laser induced heating.

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피코초 레이저 및 CDE를 이용한 TSV가공기술 (TSV Formation using Pico-second Laser and CDE)

  • 신동식;서정;조용권;이내응
    • 한국레이저가공학회지
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    • 제14권4호
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    • pp.14-20
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    • 2011
  • The advantage of using lasers for through silicon via (TSV) drilling is that they allow higher flexibility during manufacturing because vacuums, lithography, and masks are not required; furthermore, the lasers can be applied to metal and dielectric layers other than silicon. However, conventional nanosecond lasers have disadvantages including that they can cause heat affection around the target area. In contrast, the use of a picosecond laser enables the precise generation of TSVs with a smaller heat affected zone. In this study, a comparison of the thermal and crystallographic defect around laser-drilled holes when using a picosecond laser beam with varing a fluence and repetition rate was conducted. Notably, the higher fluence and repetition rate picosecond laser process increased the experimentally recast layer, surface debris, and dislocation around the hole better than the high fluence and repetition rate. These findings suggest that even the picosecond laser has a heat accumulation effect under high fluence and short pulse interval conditions. To eliminate these defects under the high speed process, the CDE (chemical downstream etching) process was employed and it can prove the possibility to applicate to the TSV industry.

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나노초 UV 레이저 응용 IC 기판 소재 조성별 가공 특성 (Characteristics of direct laser micromachining of IC substrates using a nanosecond UV laser)

  • 손현기;신동식;최지연
    • 한국레이저가공학회지
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    • 제15권3호
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    • pp.7-10
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    • 2012
  • Dimensions (line/space) of circuits in IC substrates for high-end chips (e.g. CPU, etc.) are anticipated to decrease as small as $10{\mu}m/10{\mu}m$ in 2014. Since current etch-based circuit-patterning processes are not able to address the urgent requirement from industry, laser-based circuit patterning processes are under active research in which UV laser is used to engrave embedded circuits patterns into IC substrates. In this paper, we used a nanosecond UV laser to directly fabricate embedded circuit patterns into IC substrates with/without ceramic powders. In experiments, we engraved embedded circuit patterns with dimensions (width/depth) of abut $10{\mu}m/10{\mu}m$ and $6{\mu}m/6{\mu}m$ into the IC substrates. Due to the recoil pressure occurring during ablation, the circuit patterning of the IC substrates with ceramic powders showed the higher ablation rate.

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