• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.16-19
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• 2000

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.243-246
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• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effict and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.243-246
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• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.201-207
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• 2002

In this paper, we haute proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. New power BRTs have shown superior electrical characteristics including the snab-back effect and the forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with the intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of the BRT is the avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develop a super high voltage power device and it applies to another power device including IGBT, EST and etc.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.2
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.388-388
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• 2012

In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.63-64
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• 2006

Here we present detailed simulation results of trench field stop IGBTs. Besides the reduced on-state voltage drop there is also an Increase of forward blocking voltage. A trench gate IGBT has low on-state voltage drop mainly due to the removal of the JFET region and a field stop IGBT has high forward blocking voltages due to the trapezoidal field distribution under blocking condition. We have simulated the static characteristics of TIGBT with field stop technology by 2D simulator(MEDICI). The simulated result of forward blocking voltage and on-state voltage drop is about 1,408V and 1.3V respectively at $110{\mu}m$ N-drift thickness.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.188-189
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• 2017

There has been a growing demand for power semiconductor switches equipped with high-voltage blocking capability of kV range and fast-switching characteristics of ns range in various plasma application. This paper investigates the application of SiC MOSFETs in the particular plasma application which requires the blocking voltage of 4.5kV and the switching transient time of less than 100ns. In order to meet the required blocking voltage, the series connection of multiple SiC MOSFETs is adopted in this paper. Also, snubber capacitors are employed to equalize the voltage sharing among the series connected SiC MOSFETs. The simulation and experimental result successfully verifies the application of SiC MOSFETs and snubber capacitors in the plasma application requiring high-voltage and fast-switching load dynamics.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.95-98
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• 2003

Power semiconductors are being currently used as a application of intelligent power inverters to a refrigerator, a washing machine and a vacuum cleaner as well as core parts of industrial system. The rating of semiconductor devices is an important factor in decision on the field of application and the forward blocking voltage is one of factors in decision of the rating. The Power MOS device has a merit of high input impedance, short switching time, and stability in temperature as well known. Power MOS devices are mainly used as switches in the field of power electronics, especially the on-state resistance and breakdown voltage are regarded as the most important parameters. Power MOS devices that enable a small size, a light weight, high-integration and relatively high voltage are required these days. In this paper, we proposed the new lateral power MOS which has forward blocking voltage of 250V and contains trench electrodes and verified manufactural possibility by using TSUPREM-4 that is process simulator.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.21-26
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• 2016

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.