• Title/Summary/Keyword: high Xe discharge

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Development of a Photoemission-assisted Plasma-enhanced CVD Process and Its Application to Synthesis of Carbon Thin Films: Diamond, Graphite, Graphene and Diamond-like Carbon

  • Takakuwa, Yuji
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.105-105
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    • 2012
  • We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

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A new Areal Selective Dimming Method of Mercury-free Flat Fluorescent Lamps for LCD Backlighting

  • Jung, Jae-Chul;Seo, In-Woo;Oh, Byung-Joo;Kim, Hyuck;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1189-1192
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    • 2008
  • A new mercury-free flat fluorescent lamp with a single cell having dimension 2.2inches across the diagonal, had been developed which shows a wide, stable operating voltage margin, high luminance and luminous efficacy by adopting the bipolar pulse drive scheme. In this paper, the single cell is expanded into a multi-structured configuration to realize a 32inch sized panel across the diagonal by a simple repetition of the single cells. A driving scheme is proposed for a 2-bit areal selective dimming using dual auxiliary electrodes and bipolar drive scheme.

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Study on Image Retention in an AC Plasma Display Panel

  • Kim, Sang-Ho;Choi, Kyung-Cheol;Shin, Bhum-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.259-262
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    • 2005
  • Image retention is a kind of fatal shortcoming of the AC PDPs for realizing high-quality picture. In this work, the measurement method of image retention was proposed using temporal measurement of luminance, CIEXYZ tristimulus values, IR emission of reset pulse, and temperaturel. On the base of temporal measurement of luminance, CIEXYZ tristimulus value, and IR emission of reset pulse, the retention time of Ne+5%Xe gas-mixture discharge was about 2 hours after white window image. However, it was about 20 minute on the base of temporal measurement of temperature.

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Measurement of excited species in discharges using Laser Absorption spectroscopy

  • Sakai, Yosuke
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.5-8
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    • 2000
  • The population density of excited species in dc, rf and laser ablation plume plasmas has been measured using laser absorption spectroscopy. It was shown that, when the plasma was modulated by on and off with, the sensitivity and signal to noise (S/N) ratio became high. For example, the atomic O(3$^{5}$ S$^{o}$ $_2$) Population density, No* in $O_2$/He mixtures was obtained by the highest S/N ratio at a frequency of 2.7kHz. In a 20Torr room air, the lowest No* level to be detectable was shown to be an order of 10$^{7}$ cm$^{-3}$ . The population densities of resonance Ar(1S$_2$) and Xe(1S$_4$) levels were also measured in barrier discharges and laser ablation plasmas.

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The characteristics of AC-PDPs According to binary and ternary gas mixtures of He-Ne-Xe_

  • Lee, H.J.;Son, C.G.;Lee, S.B.;Han, Y.K.;Jeoung, S.H.;You, N.L.;Lim, J.E.;Lee, J.H.;Moon, M.W.;Oh, P.Y.;Jeoung, J.M.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1195-1198
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    • 2005
  • The improvement of efficiency is the one of the most important part in AC PDPs . To achieve high efficiency, high VUV emission efficiency and High ion induces secondary electron emission coefficient are needed. We have measured the emission spectra of vacuum ultraviolet rays and ion induced secondary electron emission coefficient of MgO protective layer in surface discharge AC-PDP with binary and ternary gas mixtures. We have investigated electro-optical characteristics of AC-PDPs to optimum gas mixture for high efficient.

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A Study of the Effect using Ramp Waveform on the Address Period of Address Display Separated Operating in ac Plasma Display Panel (AC-PDP의 ADS 구동방식에서 어드레스 구간에 기울기파를 사용한 효과에 관한 연구)

  • Joung, Bong-Kyu;Kim, Ji-Sun;Kwon, Shi-Ok;Hwang, Ho-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.2
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    • pp.180-186
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    • 2005
  • As a driving method of AC-PDP, Address-Display Separated(ADS) driving has been widely adopted for its simple architecture and low discharge failure rate. However, a high definition like a HDTV has defect of long addressing time by reason of a number of pixels. Priming effect isn't fully sustained because of long addressing time during the address period. Therefore, it has different wall charge and luminance of each addressing time in the sustain period. In this study, we suggest a new driving waveform on the address period to improve these defects. We applied a ramp waveform, instead of a square waveform, to an address period in ADS, for operating on the AC-PDP, which used the conventional gas [He-Ne-Xe]. When the ramp waveform is applied to the address period, we experimented for uniform wall charge and the improved luminance by sustained Priming effect at each addressing time in the sustain period.

Development of High Efficiency PDP Driven by RF Pulses

  • Choi, J.P.;Jeon, W.G.;Kang, J.;Lim, G.S.;Kim, O.D.;Kim, H.Y.;Song, J.W.;Yoo, E.H.;Park, M.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.169-170
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    • 2000
  • The conventional AC PDP has a relatively low efficiency which is close to 1.5 lm/W. If the AC sustain period is replaced by the RF sustain period, due to oscillating and low electric field, almost 60% of the supplied energy is spent by Xe excitation [1]. The efficiency of RF PDP can be $4{\sim}5$ times higher than that of AC PDP. In this paper, we will present the RF PDP that is a new type of PDP. A new display method in PDP using RF pulses is suggested and applied on a 4-inch-diagonal Panel (hereinafter 4" panel). Even though there were many researches in RF discharge, there was not enough research for display application. Now we propose the RF PDP that is a new display field and we will expect to do more research in this field.

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A Study on the Sputtering-resistant Properties of MgO Thin-film in the AC Plasma Display Panel (PDP) (AC Plasma Display Panel (PDP)에서 MgO 박막의 내스퍼터성에 관한 연구)

  • Ji, Seong-Won;Yeo, Jae-Yeong;Lee, U-Geun;Jo, Jeong-Su;Park, Jeong-Hu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.361-366
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    • 1999
  • The life of AC PDP depends largely on the sputtering-resistant property of the protecting layer such as MgO thin-film. However, it is very difficult to measure the sputtering-resistant property in the stable driving conditions of AC PDP. In this paper we have suggested a high speed measurement technique of the sputtering-resistant property of MgO thin-film by applying the MgO thin-film as the target of RF magnetron sputtering system. We have also applied this method to the e-beam MgO and sputter-MgO and e-beam MgO superior to sputter-MgO 3 times over. Also, the relation of Xe gas partial pressure(X) and sputtered thickness(Y) was Y=3.4X+13.5.

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