• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.591-591
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• 2013

Fully and partially grown hexagonal boron nitride (h-BN) on Cu foil, synthesized by chemical vapor deposition method, was studied using Raman and SEM measurements. Fully and partially grown samples were successfully made from borane-ammonia complex to controlling pressure and growth time. The fully grown h-BN and partially grown h-BN exhibits a ~1,370 $cm^{-1}$ B-N vibrational mode ($E_{2g}$) Especially, well-aligned triangular h-BN monolayer was observed on some domain of Cu foil using SEM measurements.

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.53-57
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• 2009

The h-BN powder was synthesized by amorphous $B_2O_3$ and activated carbon at $1550^{\circ}C$ in nitrogen atmosphere, whose properties were examined according to $MgB_6$ addition. Amount of $MgB_6$ addition was varied in the range of $0{\sim}$10\;wt% of the initial mixture. It was observed that $MgB_6$ addition led to an increase in the amount and the grain size of h-BN and decrease in the amount of $B_4C$ forming. When $MgB_6$ added 5 wt%, the amount and crystallinity of h-BN increased as the holding time at the synthesis temperature was prolonged. It was also confirmed that the regularity of three-dimensional ordering of h-BN increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.344.2-344.2
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• 2016

Fully and partially grown hexagonal boron nitride (h-BN) on Cu foil, synthesized by chemical vapor deposition method, was studied using Raman and SEM measurements. Fully and partially grown samples were successfully made from borane-ammonia complex to controlling pressure and growth time. The fully grown h-BN and partially grown h-BN exhibits a ~ 1370 cm-1 B-N vibrational mode (E2g). Especially, well-aligned triangular h-BN monolayer was observed on some domain of Cu foil using SEM measurements.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.170-170
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• 2013

We present a novel etching technique for 2-dimentional (2-D) hexagonal boron nitride (h-BN) by using capacitively coupled plasma (CCP) of oxygen combined with a post-treatment by de-ionized (DI) water. Oxygen CCP etching process for h-BN has been systematically studied. It is found that a passivation layer was generated to obstruct further etching while it can be easily and radically removed by DI water. An essential cleaning effect also has been observed in the etching process, organic residues are successfully removed and the surface roughness has much decreased. Considering h-BN is the most important 2-D dielectric material and its potential application for graphene to silicon-based electronic devices, such an etching method can be widely used to control the 2-D h-BN thickness and improve the surface quality.

• Journal of Electrical Engineering and Technology
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• v.5 no.4
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• pp.637-639
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• 2010

Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed $H_3BO_4-BCl_3$-ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at $1070^{\circ}C$ in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.382-382
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• 2011

이차원 결정인 그래핀(graphene)은 전하도핑(charge doping)과 기계적 변형에 민감하기 때문에 기판의 물리 및 화학적 구조 및 특성에 따라 그래핀의 물성이 크게 영향을 받는다고 알려져 있다. 특히 널리 사용되고 있는 산화실리콘($SiO_2$/Si) 기판에 존재하는 나노미터 크기의 굴곡과 전하 트랩(charge trap)은 전하 이동도 및 화학적 안정성 등의 면에서 그래핀 고유의 뛰어난 물성을 제한하는 것으로 알려져 있다. 본 연구에서는 비정질 산화실리콘 기판을 대조군으로 삼아 편평도가 높은 결정성 h-BN (hexagonal boron nitride) 기판이 그래핀에 미치는 영향을 관찰하였다. 화학기상증착법(chemical vapor deposition 또는 CVD)으로 성장시킨 그래핀을 각 기판에 전사시킨 후 라만 분광법을 통해 전하 도핑 및 기계적 변형 정도를 측정하였다. h-BN 위에서는 외부 환경에서 기인하는 전하 도핑 정도가 산화실리콘 기판보다 적게 관찰되었다. 또한 h-BN 위에 고착된 그래핀 시료에서는 기판-그래핀 상호작용에서 기인하는 것으로 보이는 새로운 라만 분광 특성이 관찰되었다.

• Journal of Sensor Science and Technology
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• v.26 no.6
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• pp.379-385
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• 2017

In this study, an amperometric non-enzymatic glucose sensor was developed on the surface of a glassy carbon electrode by simply drop-casting the synthesized homogeneous suspension of hexagonal boron nitride (h-BN) nanosheets with a copper metal-organic framework (Cu-MOF) composite. Comprehensive analytical methods, including field-emission scanning electron microscopy (FE-SEM), Fourier-transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), cyclic voltammetry, electrochemical impedance spectroscopy, and amperometry, were used to investigate the surface and electrochemical characteristics of the h-BN-Cu-MOF composite. The FE-SEM, FT-IR, and XRD results showed that the h-BN-Cu-MOF composite was formed successfully and exhibited a good porous structure. The electrochemical results showed a sensor sensitivity of $18.1{\mu}A{\mu}M^{-1}cm^{-2}$ with a dynamic linearity range of $10-900{\mu}M$ glucose and a detection limit of $5.5{\mu}M$ glucose with a rapid turnaround time (less than 2 min). Additionally, the developed sensor exhibited satisfactory anti-interference ability against dopamine, ascorbic acid, uric acid, urea, and nitrate, and thus, can be applied to the design and development of non-enzymatic glucose sensors.

• Applied Microscopy
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• v.46 no.4
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• pp.217-226
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• 2016

Monolayer hexagonal boron nitride (h-BN) is a phenomenal two-dimensional material; most of its physical properties rival those of graphene because of their structural similarities. This intriguing material has thus spurred scientists and researchers to develop novel synthetic methods to attain scalability for enabling its practical utilization. When probing the growth behaviors and structural characteristics of h-BN, the use of appropriate characterization techniques is important. In this review, we detail the use of scanning and transmission electron microscopies to investigate the atomic configurations of monolayer and bilayer h-BN grown via chemical vapor deposition. These advanced microscopy techniques have been demonstrated to provide intimate insights to the atomic structures of h-BN, which can be interpreted directly or indirectly using known growth mechanisms and existing theoretical calculations. This review provides a collective understanding of the structural characteristics and defects of synthetic h-BN films and facilitates a better perspective toward the development of new and improved synthesis techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Korean Journal of Materials Research
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• v.33 no.12
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• pp.503-510
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• 2023

This comprehensive study delves into the intricate process of exfoliating and functionalizing boron nitride nanosheets (BNNSs) extracted from hexagonal boron nitride (h-BN), and meticulously explores their potential application within epoxy composites. The extensive research methodology encompasses a sequence of treatments involving hydrothermal and sonication processes aimed at augmenting the dispersion of BNNSs in solvents. Leveraging advanced analytical techniques such as Raman spectroscopy, X-ray diffraction, and FTIR spectroscopy, the study rigorously analyzes a spectrum of changes in the BNNS's properties, including layer count variations, interlayer interactions, crystal structure modifications, and the introduction of functional groups. The research also rigorously evaluates the impact of integrating BNNSs, specifically glycidyl methacrylate (GMA)-functionalized BNNSs, on the thermal conductivity of epoxy composites. The conclusive findings exhibit notable enhancements in thermal properties, predominantly attributed to the enhanced dispersion of fillers and enhanced interactions within the epoxy matrix. This pioneering work illuminates the wide potential of functionalized BNNSs for significantly enhancing the thermal conductivity of epoxy composites, paving the way for advanced materials engineering and practical applications.