• Journal of Magnetics
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• v.21 no.1
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• pp.35-39
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• 2016

$Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.615-621
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• 2001

We carried out the kinetic model calculations in order to estimate the nucleation rates for two kinds of half-loop dislocations in highly strained hetero-epitaxial growths; $60^{\circ}$dislocations and twinning dislocations. The surface defects and the stress concentration effects were considered in this model, and the remaining elastic strain of the epilayers with increasing film thickness was taken into account by using the modified Matthews' relation. The calculations showed that the stress concentration effect at surface imperfections is very important for describing the defect generation in highly mismatched epitaxial growth. This work also showed that the stress concentration effect determined the type of dislocation nucleating dominantly at early growth stages in accordance with our XTEM (cross-section transmission electron microscopy) defect observation.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.115-125
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• 1990

We have investigated bulk and hetero-epitaxial growth of GaAs single crystal. Various growth techniques such as HB, HZM, and VGF for high quality bulk GaAs were successfully developed by appling the specially designed DM(direct monitoring) furnace. Al GaAs/GaAs superlattice structure and In(x)Ga(1-x) As/GaAs epilayers were also grown by MOCVD and VPE, respectively. The characterization of GaAs single crystals and epilayers was made by X-ray diffraction, Hall effect, PL, chemical etching and angle lapping technique.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.162-167
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• 1999

GaN epilayers deposited by the OMVPE method on sapphires with 3 different surface orientations were investigated by TEM and their difference in mucrostructure were compared with each other. GaN epilayers were grown on the all three kinds of sapphire substrates; however, the best interfacial state and crystallinity were observed in the specimen using a {0001} substrate The density of defects in GaN epilayers on {0001} substrates was also less than others. No buffer layer was found at the interfaces of all the specimens; however, it was observed that the region which shows lattice distortion at the interface was only a few nonameter wide. Accordingly, TEM investigation revealed that GaN epilayers having some internal defects could be grown on sapphire {1120} and {1102} planes without a buffer layer, and the hetero-epitaxial GaN films were obtained from the specimen using {0001} substrates with the microstructural point of view.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1542-1545
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• 2002

Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (111)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleation(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.99-104
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• 1990

The hetero-epitaxial growth of AmB v type onto-electronic material is attempted by means of the laser-induced chemical vapour deposition technique. The bimolecular gas phase reaction of trimethylgallium with ammonia on (001) alumina substrate for the epitaxy of gallium nitride is chosen as a model system. In this study, ArF exciter laser (193nm) is employed as a photon source. Marked difference is found in nucleation and in subsequent crystal incorporation between the doposits formed with and without the laser-irradiation. The surface coverage with isomorphically grown drystallites is pronounced upon "volume-excited" irradiation in comparison with the conventional thermal process. As to the crystal structure of the grown layers, the laser-induced deposits of GaN may be represented by either of the following two models: (001) plane of sapphire //y (001) plane of wurtzite-type GaN, OR (001) plane of sapphire//(001) plane of wurtzite-type-GaN (111) plane of twinned zinc blende-type GaN.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.343-347
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• 2007

Fe thin films exhibited (100) preferential orientation when they were deposited at low deposition rate of $0.1{\AA}/s$ on glass substrates by using facing target sputtering system. The (100) oriented Fe layer induces (100) orientation of Pt layer deposited on it owing to hetero-epitaxial growth. After annealing at $600^{\circ}C$ in $H_2$ atmosphere, FePt films exhibited f.c.t. (001) texture in the whole film caused by inter-diffusion between atoms. We have also confirmed that the homogeneously inter-diffused compositional modulation in the film after the annealing process. Furthermore, annealing process in $Ar+H_2$ atmosphere at $400^{\circ}C$ during Pt deposition was effective for attaining Pt (100) texture. The annealing process during Pt deposition also induced in low annealing temperature and decreased annealing time for attaining the FePt f.c.t. (001) structure.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• Journal of the Korean Chemical Society
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• v.40 no.3
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• pp.167-172
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• 1996

For the preparation of single-crystalline GaN film, heteroepitaxial growth on a sapphire substrate was carried out by halide vapor phase epitaxy(HVPE) method. The resulting GaN films showed n-type conductivity. The insulator type GaN film was made by doping with Zn(acceptor dopant), which showed emission peaks around 2.64 and 2.43 eV. The result of this study indicates that GaN can be obtained in an epitaxial structure of MIS(metal-insulator-semiconductor) junction. The observed data are regarded as fundamental in developing GaN epitaxial films for light emitting devices of hetero-structure type.