• 복식
• /
• 제62권7호
• /
• pp.41-53
• /
• 2012

Hwangnamdaechong Tomb (The 98th tomb in Hwangnam-dong), one of the royal tombs located around the area of royal tomb of King Michu in Hwangnam-dong, Gyeongju, is currently designated as Historic Site No. 40. It is assumed that Hwangnamdaechong Tomb is a royal tomb of the early 5th century. This study aims to examine the fabric relics excavated from Hwangdamdawchong Tomb and currently housed in Gyeongju National Research Institute of Cultural Heritage. The types of fabrics excavated from Hwangdamdawchong Tomb include plain silk, warp-faced compound woven silk, and hemp cloth. Most of these fabrics are adhered to metal products that became rusty. Plain silk found in Hwangnamdaechong Tomb can be divided into four types by its weaving method. Geum excavated from Hwangnamdaechong Tomb is typical Gyeong Geum that uses colored warp for its base and pattern. It is plain Gyeong Geum that the binding weft and warp is plain woven. Although there are a lot of Gyeong Geum fabrics whose colors are hard to define due to yellowing after long years, there are still many fabrics whose color such as purple, red, blue, and green can be identified. As literatures have shown that p cloth as well as silk were frequently woven during Silla dynasty, tremendous amount of hemp cloth was excavated. Most of the hemp cloth has S-twist in the warp and 8-12 seung degree of delicacy.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2017년도 춘계학술대회 논문집
• /
• pp.158-158
• /
• 2017

Titanium and its alloys have been used in the field dental and orthopedic implants because of their excellent mechanical properties and biocompatibility. Despite these attractive properties, their passive films were somewhat bioinert in nature so that sufficient adhesion of bone cells to implant surface was delayed after surgical treatment. Recently, plasma electrolyte oxidation (PEO) of titanium metal has attracted a great deal of attention is a comparatively convenient and effective technique and good adhesion to substrates and it enhances wear and corrosion resistances and produces thick, hard, and strong oxide coatings. Silicon(Si), Zinc(Zn), and Manganese(Mn) have a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. And, Zn has been shown to be responsible for variations in body weight, bone length and bone biomechanical properties. Also, Mn influences regulation of bone remodeling because its low content in body is connected with the rise of the concentration of calcium, phosphates and phosphatase out of cells. The objective of this work was research on bone-like apatite morphology on Si-Zn-Mn-hydroxyapatite coating on Ti-6Al-4V alloy by plasma electrolytic oxidation. Anodized alloys were prepared at 280V voltage in the solution containing Si, Zn, and Mn ions. The surface characteristics of PEO treated Ti-6Al-4V alloy were investigated using XRD, FE-SEM, and EDS.

• 자원환경지질
• /
• 제36권5호
• /
• pp.381-385
• /
• 2003

본 연구는 폐산화철을 이용한 폐수 중금속 제거 가능성을 알아보고자 시도되었다. 실제 폐수와 폐산화철을 적용하기에 앞서 상업적으로 구입가능한 Mn-ferrite를 이용하여 실내 회분식 시험을 통한 흡착실험을 실시하여 pH, 접촉시간, 중금속 농도 및 온도 등과 같은 다양한 흡착 조절인자들을 이용하여 페라이트에 의한 Cd과 Pb의 흡착 및 제거특성을 알아보았다. 접촉시간을 1에서 360분까지 변화하여 흡착속도를 측정하였으며 일정온도에서 Cd와 Pb의 농도를 변화시켜 흡착등온선을 구하였다. 또한 온도(15∼35$^{\circ}$)와 pH(4∼10) 변화에 따른 흡착특성 변화를 고찰하였다. Cd과 Pb는 Freundlich 식에 잘 맞았으며 Cd에 비하여 Pb가 더 흡착이 잘 되었다. pH가 높을수록 Cd와 Pb가 더 잘 흡착되었으며 이는 pH증가에 따라 수소이온 농도가 감소하고 결과적으로 표면의 흡착가용 장소가 증가하기 때문인 것으로 생각된다. 같은 pH에서 원소의 농도가 증가할 때 흡착이 더 잘 일어났다. 온도 역시 Pb와 Cd의 흡착능에 영향을 미쳤으며 Pb의 경우 온도가 증가할수록 흡착정도가 높아지는 반면 Cd의 경우 덜 흡착이 되었다. Cd는 Pb에 비하여 더 온도에 영향을 받으며 이러한 Cd와 Pb의 흡착특성 차이는 Cd에 비하여 Pb가 더 hard한 특성 때문인 것으로 생각된다. 본 연구는 폐산화철을 이용하여 각종 폐수 중금속을 제거하는 공정에 사용될 수 있음을 시사한다.

• 대한정형외과 초음파학회지
• /
• 제4권1호
• /
• pp.20-23
• /
• 2011

관통성 손상 후 외부 이물질이 신체 조직 내 남아 있는 경우는 응급실을 방문하는 주요 원인 중의 하나이다. 수부에서 발견되는 이물질은 대부분 외상에 의해 발생하며 식물성 조각들이 가장 흔하고, 다음으로 유리조각, 금속조각의 순서로 발생한다. 특히 나무조각이나, 플라스틱 조각 등은 방사선투과성(radiolucency)을 가지고 있어 단순 방사선 사진으로 쉽게 발견하기 어려운 경우가 많아 외부 이물질을 찾는 것이 어려울 뿐만 아니라 일부 제거하더라도 이물질의 잔존 여부를 감별하기가 어렵다. 이에 저자들은 나무가시에 수상 당한 후 1차 의료기간에서 일부 나무가시를 제거 후 잔존 나무가시를 발견하지 못하고 수상 4주 이후 초음파을 이용하여 잔존 이물질을 진단하여 수술적으로 치료 후 동통의 감소를 보인 1례를 경험하였기에 문헌 고찰과 함께 보고하는 바이다.

• Journal of Welding and Joining
• /
• 제31권1호
• /
• pp.43-50
• /
• 2013

The spot welds of Transformation Induced Plasticity (TRIP) steels are prone to interfacial failure and narrow welding current range. Hard microstructures in weld metal and heat affected zone arenormally considered as one of the main reason to accelerate the interfacial failure mode. There fore, detailed observation of weld microstructure for TRIP steels should be made to ensure better weld quality. However, it is difficult to characterize the microstructure, which has similar color, size, and shape using the optical or electron microscopy. The atomic force microscope (AFM) can help to analyze microstructure by using different energy levels for different surface roughness. In this study, the microstructures of resistance spot welds for AHSS are analyzed by using AFM with measuring the differences in average surface roughness. It has been possible to identify the different phases and their topographic characteristics and to study their morphology using atomic force microscopy in resistance spot weld TRIP steels. The systematic topographic study for each region of weldments confirmed the presence of different microstructures with height of 350nm for martensite, 250nm for bainite, and 150nm for ferrite, respectively.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.167-167
• /
• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.408-408
• /
• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.436-437
• /
• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.387-387
• /
• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• 한국주조공학회지
• /
• 제20권4호
• /
• pp.254-259
• /
• 2000

Metal matrix composites(MMCs) reinforced with hard particles have many potential application in aerospace structures, auto parts, semiconductor package, heat resistant panels, wear resistant materials and so on. In this work, the effect of SiC partioel sizes(50 and 100 ${\mu}m$) and additional elements such as Si, Cu and Ti on the microstructure and the wear property of $Al-5Mg-X(Si,Cu,Ti)/SiC_p$ composites produced by pressureless infiltration method have been investigated using optical microscopy, scanning eletron microcopy(SEM) with EDS(energy dispersive spectrometry), hardness test, X-ray diffractometer(XRD) and wear test. In present study, the sound $Al-5Mg-X(Si,Cu,Ti)/SiC_p$(50 and 100 ${\mu}m$) composites were fabricated by pressureless infiltration method. The $Al-5Mg-0.3Si-O.1Cu-O.1Ti/SiC_p$ composite with $50 {\mu}m$ size of SiC particle has higher hardness and better wear property than any other composite with $100{\mu}m$ size of SiC particle produced by pressureless infiltration method. The hardness and wear property of $Al-5Mg/SiC_p$(50 and 100 ${\mu}m$) composites were enhanced by the addition of Si, Cu and Ti in Al-5%Mg matrix alloy.