• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.515-518
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• 2002

In this study, the ellipsoidal cap type magnetic pole structure was proposed for the electro-magnet in B-H curve tracer. From the simulation for the electro-magnet without specimen, the area of effective uniform field(99% range for the central field value) was considerably increased in case of the newly proposed ellipsoidal cap type magnetic pole than that of the conventional simple-inclined cap type magnetic pole. Also, through the simulation for the electro-magnet with permanent magnet specimen(NaFe30), the optimal Positions of the magnetic field measurement sensor(Hall sensor) were found out in each case and the errors were decreased in case of the newly proposed ellipsoidal cap type magnetic pole.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.181-187
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• 1998

The ionization energy and degree of ionization for p-type $Si_{1-x}Ge_x$ with boron doping are calculated taking into account the screening and broadening effects. The drift and Hall mobilities are then calculated using the relaxation time approximation and compared with the previously reported measurement data for relaxed and strained $Si_{1-x}Ge_x$ alloys to estimate the alloy scattering potential. From a fit, the alloy scattering potential is found to be 0.5 eV. The in-plane drift mobility for p-type strained $Si_{1-x}Ge_x$ grown on (001) Si substrate is approximately 1+$10x^2$ times higher than that for bulk Si in the high doping range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.336-336
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• 2010

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe, a Hall Effect measurement and an UV/VIS spectrometer. The minimum resistivity of film was $6.5{\times}10^{-4}$[$\Omega$-cm] and the average transmittance of over 80% was seen in the visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.246-246
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• 2008

In this work, VOx thin films have been deposited by DC magnetron sputtering method with various DC power. The characterization of the deposited thin films were changed by DC power. The experimental data are obtained on the growth rate and optical and electrical properties of VOx thin films with the increase of DC power. The growth rate. and the surface roughness decrease with DC power. Also, we investigated the electrical and optical properties of VOx thin films using hall measurement, 4-point probe, and UV-visible methods.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.38-43
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• 1994

GaAs and AlGaAs layers were grown by Molecular Beam Epitaxy (MBE) to fabricate hith performance GaAs MESFETs. Optimum growth temperatures were found to be 600$^{\circ}C$ from their Hall measurement data. MESFETs with the gate legth of 1${\mu}$m and the gate width of 100.mu.m were fabricated on the MBE-grown GaAs layters which has i-GaAs buffer layer and characterized. Knee volgate and mazimum transconductance of the devices were 1V, 224mS/mm, respectively. Cut-off frequency at on-wafer measuring pattern was measured to be 18 GHz. The MESFET with the 1${\mu}$m -thick i-Al$_{0.3}Ga_{0.7}$As buffer layer between nactive and i-GaAs was fabricated on order to reduce the leakage current which flows through the i-GaAs buffer layer. Its output resistance was 2.26 k${\Omega}$.mm which increased by a factor of 15 compared with the MESFET without i-Al$_{0.3}Ga_{0.7}$As buffer layer.

• Journal of Magnetics
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• v.6 no.1
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• pp.31-35
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• 2001

This paper describes the design method of a magnetic system to maximize the magnetic flux leakage (MFL) in a non-destructive testing (NDT) system. The defect signals in a MFL type NDT system mainly depend on the change of the magnetic leakage flux in the region of a defect. The characteristics of the B-H curves are analysed and a design method to define the operating point on B-H curves for maximum leakage is performed. The computed MFL signal by a nonlinear finite element method is verified by measurement using Hall sensors mounted on the 6 legs PIG, the traveling detector unit in gas pipe, in an 8 inch test tube with defects. The rhombic defects could be successfully identified from the defect signals.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.142-148
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• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

• Geomechanics and Engineering
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• v.23 no.4
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• pp.381-392
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• 2020

The difficulties, challenges and limitations faced in standard pressuremeter testing in the measurement of low soil deformations led a number of researchers to think about the possible modification of the equipment, and especially the replacement of the volumeter by a Hall Effect sensor. This article is a major contribution in this direction. It makes an attempt to detail the design, manufacture and operation of the new equipment. The calibration of the various components was carried out according to the rules presently in force. This proposal was applied, on an exploratory basis, to the data of a real site located in France. The authors present the preliminary results of some cyclic pressuremeter tests, previously carried out in the laboratory, on a sandy material, and they then provide a basic interpretation of these results. The findings indicated that the proposed apparatus is capable of providing high-quality information about constraints and deformations. Although these tests were performed within the laboratory, it was possible to analyze the power, quality, performance and insufficiencies of the proposed equipment.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.252-252
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• 2010

AIZTO (Al-In-Sn-ZnO) thin film was deposited on glass substrate at room temperature by facing target sputtering (FTS) system. The FTS system was designed to array two targets facing each other. Two different kinds of targets were installed on FTS system. We used the ITO (In2O3 90wt%, SnO2 10wt%) target and the AZO (ZnO 98wt%, Al2O3 2wt%). AIZTO films were deposited in each of the applied power of the targets. The electrical and structural properties of the as-deposited AIZTO thin films were then examined by hall-effect measurement, and by using atomic force microscope (AFM), X-ray diffractometer (XRD), and energy dispersive x-ray spectroscopy (EDX). The optical property was measured by an UV-VIS spectrometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.329.1-329.1
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• 2014

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.