• Title/Summary/Keyword: graphene oxide

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Development of Disposable Immunosensors for Rapid Determination of Sildenafil and Vardenafil in Functional Foods

  • Vijayaraj, Kathiresan;Lee, Jun Hyuck;Kim, Hyung Sik;Chang, Seung-Cheol
    • Journal of Food Hygiene and Safety
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    • v.32 no.2
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    • pp.83-88
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    • 2017
  • We introduced disposable amperometric immunosensors for the detection of Sildenafil and Vardenafil (SDF/VDF) based on screen printed carbon electrodes. The developed immunosensors were used as a non-competitive sandwich-type enzyme immunoassay with a horseradish peroxidase label. The sensors were constructed on screen printed carbon electrodes by the simple electrochemical deposition of a reduced graphene oxide and chitosan (ErGO-CS) composite. To evaluate the sensing chemistry and optimize the sensor characteristics, a series of electrochemical experiments were carried out including electrochemical impedance spectroscopy, cyclic voltammetry and amperometry. The sensors showed a linear response to SDF/VDF concentrations in a range from 100 pg/mL to 300 ng/mL. The lower detection limit was calculated to be 55 pg/mL, the sensitivity was calculated to be $1.02{\mu}Ang/mL/cm^2$, and the sensor performance exhibited good reproducibility with a relative standard deviation (RSD) of 7.1%. The proposed sensing chemistry strategy and the sensor format can be used as a simple, cost-effective, and feasible method for the in-field analysis of SDF/VDF in functional or health supplement food samples.

Improvement of 4H-SiC surface morphology using r-GO as a capping layer (환원된 그래핀 산화물을 보호 층으로 적용한 4H-SiC 표면 거칠기 향상 연구)

  • Sung, Min-Je;Kim, Seongjun;Kim, Hong-Ki;Kang, Min-Jae;Lee, Nam-suk;Shin, Hoon-Kyu
    • Journal of IKEEE
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    • v.22 no.4
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    • pp.1226-1229
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    • 2018
  • We investigated the improvement of surface roughness and states after high temperature annealing using reduced-graphene oxide (r-GO) capping layer on ion-implanted 4H-SiC epitaxial layer. The specification of the 4H-SiC wafer grown on n-type $4^{\circ}$ off-axis 4H-SiC was $10{\mu}m$-thick and n-type epitaxial layer with a dose of $1.73{\times}10^{15}cm^{-2}$. The $n^+$ region were formed by multiple nitrogen ion-implantations and r-GO capping layer was produced by spray coating method. AFM measurements revealed that RMS value of the sample capped with r-GO was tenfold decrease compared to the sample without r-GO capping. The improvement of surface states was also verified by the improvement of leakage current level.