• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.45-45
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• 2009

• Progress in Superconductivity
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• v.3 no.2
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• pp.198-212
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• 2002

The effects of reacted precursors on phase evolution, microstructure, $J_{c}$ and junctional characteristic of the inter-granular contacts were investigated in Ag-sheathed T1-1223 tapes prepared using three kinds of reacted precursors, and compared to those in the tape prepared using an unreacted precursor The precursors were prepared by heat-treating a mixture of Sr-Ba-Ca-Cu-O, $Tl_2$$O_3$, PbO and $Bi_2$$O_3$ powders at $805^{\circ}C$ (precursor I ), $840^{\circ}C$ (precursor II ) and $905^{\circ}C$(precursor III) for 20 min. Tl-1223 phase content, grain size and J\ulcorner in the tapes appeared to increase in an order of precursors I, II and III Compared to tapes prepared using an unreacted precursor, the tapes prewar ed using precursors II and III revealed reduced pore and impurity densities and an enhanced texture. Also characteristic of inter -granular contacts and fraction of strong-links were improved. The improved properties are attributed to enhanced densification resulting from using the reacted precursors.s.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.115-119
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• 1999

Ba$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were deposited by pulsed laser deposition using differently prepared targets: One was a conventionally solid-state sintered (SSS) target and the other was a modified melt-textured grown (MTC) target. Compared with SSS targets, MTG targets showed a well-connected microstructure consisting of much larger grains and the surface was Bess roughened with the cumulative laser incidence. YBCO films deposited from MTC targets showed a denser and smoother surface of the basal film than the case of SSS targets. The investigations of ${\alpha}$-axis outgrowths in the films indicated that the deposition using MTG targets would result in a more homogeneous and stable film growth as compared to the SSS targets. Also, TEM analysis revealed that the film deposited from MTG targets had a less granular microstructure that would reduce weak-link effects in the film.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.261-261
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• 1999

We observed leveling-off of the resistance in granular In/InO$_x$ thin films in the zero-temperature limit. The temperature T$_b$ at which the leveling-off appears gets larger as the sheet resistance R$_n$ increases. This is consistent with the concept that the leveling-off of the resistance is due to the dissipation of the bosonic phase and that the dissipation is enhanced as the resistance increases. The magnetic field dependence of the saturated resistance R$_b$ at low temperatures fits the modified square-root cusp-like form R$_b$/R$_n$=α exp[-b(B/B$_c$-1)$^{-1/2}$] for the magnetic field in the range B$_c$$_f$ where B$_c$ is the onset magnetic field of the resistance leveling-off. α and b are constants of order 1. For B>B$_f$ tansport properties are described by the theory of the fermi insulator. From the results, we attribute the leveling-off to the dissipative quantum tunneling of vortices, which supports the models predicting the vortex-motion-induced insulating phase related with the concept like"dirty boson" [1]l and "hose metal" [2].

• Progress in Superconductivity
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• v.6 no.1
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• pp.84-88
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• 2004

The polycrystalline superconductor $SmBa_2$$Cu_3$$O_{x}$ is fabricated, and intergranular magnetic properties are investigated using the critical state model, from which some useful parameters such as the critical current density and the intergranular volume fraction are obtained. The curve fitting for M-H hysteresis loop shows that the intergranular critical current density of $SmBa_2$$Cu_3$$O_{x}$ / decreases in the form of ($1-T/T_{c}$ )$^{1.5}$ . The intergranular volume fraction is influenced by granular morphology. From SEM image, the grains of $SmBa_2$$Cu_3$$O_{x}$ are found to be randomly shaped. This mean:; that the intergranular volume fraction of $SmBa_2$$Cu_3$$O_{x}$ / should be smaller than those of superconductors, of which grains are plate-shaped such as Tl-based superconductor.

• Progress in Superconductivity
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• v.9 no.2
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• pp.177-182
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• 2008

[ $MgB_2$ ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures $500\;{\sim}\;600^{\circ}C$ and under the reactor pressures of $25\;{\sim}\;50\;Torr$. There are some interfacial reactions in the as-grown films with impurities of mostly $Mg_2Si$, $MgAl_2O_4$, and other phases. The $T_c$'s of $MgB_2$ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly $Mg_2Si$ impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.222-222
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• 1999

From extensive measurements of the resistance and the dynamic resistance as functions of magnetic field and temperature, we find that the transport in the insulating state beyond the superconductor-insulator (S-I) transition is dominated by bosons(Cooper pairs and/or vortices) and cannot be described by the theory of the fermionic insulating phase. The maximum of the magnetoresistance at B = B$_m$ and the following negative slope in R(B) with increasing field can be explained by the crossover from the "Bose-glass" to the "Fermi-glass" phase as suggested by Paalanen, Hebard, and Ruel. The zero bias peak in dv/dl for biases below the characteristic voltage V$_c$ (or current $I_c$), gives a clue for the assumption of the "dirty boson" model which states that the insulating state above the critical magnetic field is the phase where Cooper pairs are localized due to the Coulomb blockade with a nonvanishing order parameter. The shift to a lower value of the critical magnetic field by overlaying thin Au layer, which is known as a strong spin-orbit scatterer, also supports the bosonic nature of the S-I transition.