• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1230-1231
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of 8${\sim}$20[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.01[%], 81.58[Mpa], 31.437[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites. In this paper, it is convinced that ${\beta}$-SiC based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.688-694
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• 1999

Ti-6Al-4V-N films have been grown onto glass substrates by dc reactive magnetron sputtering from a Ti-6Al-4V-N alloy target at different nitrogen partial pressure, input powers and sputtering times. The influence of various sputtering conditions on structural properties of Ti-6Al-4V-N films was investigated by measuring their X-ray diffraction. The quaternary Ti-6Al-4V-N film is crystallizing in a face centered cubic TiN structure, the lattice parameter is smaller than the TiN parameter as titanium atoms of the TiN lattice are replaced by aluminum and vanadium atoms. The films show the (111) preferred orientation and the (111) peak intensity decreases as the nitrogen partial pressure is increased, but the intensity increases as the sputtering time is increased. The deposition rate and the grain size are alto related with the variation of various sputtering conditions.

• The Journal of Natural Sciences
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• v.8 no.1
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• pp.53-59
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• 1995

Effects of sintering additives and sintering temperatures on the sintering behavior and mechanical properties of SiC whisker reinforced alumina composites have been investigated in this study. Dense (>95% TD) composites were obtained by using 2 wt% $Y_2O_3$ as liquid phase sintering additive. But only porous composite could be obtained when the sintering additives were MgO and $TiO_2$, which were known as the sintering additives for solid state sintering of alumina. Bending strength and fracture toughness were enhanced by reinforcement of SiC whisker. It is belived from the microstructure investigation that the enhanced by strength and toughness could be attribute to the reinforcing and grain growth inhibition effects of SiC whisker. After HIP treatment, fully dense composites were obtained and further enhanced mechanical properties achieved.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.105-105
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• 2016

Recently, high power impulse magnetron sputtering (HIPIMS) has attracted considerable attentions due to its high potential for industrial applications. By pulsing the sputtering target with high power density and short duration pulses, a high plasma density and high ionization of the sputtered species can be obtained. HIPIMS has exhibited several merits such as increased coating density, good adhesion, microparticle-free and smooth surface, which make the HIPIMS technique desirable for synthesizing hard coatings. However, hard coatings present intrinsic defects (columnar structures, pinholes, pores, discontinuities) which can affect the corrosion behavior, especially when substrates are active alloys like steel or in a wear-corrosion process. Atomic layer deposition (ALD), a CVD derived method with a broad spectrum of applications, has shown great potential for corrosion protection of high-precision metallic parts or systems. In ALD deposition, the growth proceeds through cyclic repetition of self-limiting surface reactions, which leads to the thin films possess high quality, low defect density, uniformity, low-temperature processing and exquisite thickness control. These merits make ALD an ideal candidate for the fabrication of excellent oxide barrier layer which can block the pinhole and other defects left in the coating structure to improve the corrosion protection of hard coatings. In this work, CrN/Al2O3/CrN multilayered coatings were synthesized by a hybrid process of HIPIMS and ALD techniques, aiming to improve the CrN hard coating properties. The influence of the Al2O3 interlayer addition, the thickness and intercalation position of the Al2O3 layer in the coatings on the microstructure, surface roughness, mechanical properties and corrosion behaviors were investigated. The results indicated that the dense Al2O3 interlayer addition by ALD lead to a significant decrease of the average grain size and surface roughness and greatly improved the mechanical properties and corrosion resistance of the CrN coatings. The thickness increase of the Al2O3 layer and intercalation position change to near the coating surface resulted in improved mechanical properties and corrosion resistance. The mechanism can be explained by that the dense Al2O3 interlayer acted as an excellent barrier for dislocation motion and diffusion of the corrosive substance.

• Korean Journal of Metals and Materials
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• v.49 no.8
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• pp.614-618
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• 2011

Nanopowders of MgO, $Al_2O_3$ and $SiO_2$ were made by high energy ball milling. The rapid sintering of nanostructured $MgAl_2O_4-Mg_2SiO_4$ composites was investigated by a high-frequency induction heating sintering process. The advantage of this process is that it allows very quick densification to near theoretical density and inhibition of grain growth. Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties. As nanomaterials possess high strength, high hardness, excellent ductility and toughness, undoubtedly, more attention has been paid for the application of nanomaterials. Highly dense nanostructured $MgAl_2O_4-Mg_2SiO_4$ composites were produced with simultaneous application of 80MPa pressure and induced output current of total power capacity (15 kW) within 2min. The sintering behavior, gain size and mechanical properties of $MgAl_2O_4-Mg_2SiO_4$ composites were investigated.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.891-896
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• 2012

Nanopowders of MgO and $TiO_2$ were made by high energy ball milling. The rapid synthesis and sintering of the nanostructured $MgTiO_3$ compound was investigated by the high-frequency induction heated sintering process. The advantage of this process is that it allows very quick densification to near theoretical density and inhibition grain growth. Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties. As nanomaterials possess high strength, high hardness, excellent ductility and toughness, undoubtedly, more attention has been paid for the application of nanomaterials. A highly dense nanostructured $MgTiO_3$ compound was produced with simultaneous application of 80 MPa pressure and induced current within 2 min. The sintering behavior, gain size and mechanical properties of $MgTiO_3$ compound were investigated.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.1972-1981
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• 2022

A typical ferritic/martensitic (F/M) steel sheet was subjected to pulsed laser surface remelting (LSR) and corrosion test in lead-bismuth eutectic (LBE) at 550 ℃. There present two modification zones with distinct microstructures in the LSRed specimen: (1) remelted zone (RZ) consisting of both bulk δ-ferrite grains and martensitic plates and (2) heat-affected zone (HAZ) below the RZ, mainly composed of martensitic plates and high-density precipitates. Martensitic transformation occurs in both the RZ and the HAZ with the Kurdjumov-Sachs and Nishiyama-Wassermann orientation relationships followed concurrently, resulting in scattered orientations and specific misorientation characteristics. Hardnesses of the RZ and the HAZ are 364 ± 7 HV and 451 ± 15 HV, respectively, considerably higher than that of the matrix (267 ± 3 HV). In oxygen-saturated and oxygen-depleted LBE, thicknesses of oxide layers developed on both the as-received and the LSRed specimens increase with prolonging corrosion time (oxide layers always thinner under the oxygen-depleted condition). The corrosion resistance of the LSRed F/M steel in oxygen-saturated LBE is improved, which can be attributed to the grain-refinement accelerated formation of dense Fe-Cr spinel. In oxygen-depleted LBE, the growth of oxide layers is very low with both types of specimens showing similar corrosion resistance.

• Journal of Plant Biology
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• v.3 no.1
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• pp.16-25
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• 1960

HARN, Chang Yawl (Chonnam U. Kwangju, Korea): Siudies on the dimorpism of the Perisicaria senticosa Nakai-Kor. jour. Bot. 3(1) 16-25 During his researches regarding the morphological and physiological properties of Polygonecenae, the author has found that the species, Persicaria senticosa, aiso, besides the heterostylous plants of Polygonum family, Fagopyrum esculentum, and Persicaria japonica which was recently verified by the author as dimorphic, shows the typical floral structure of heterostylism, the description of which is not found in taxonomical works. Further research on this species have revealed that this plant, despite pressessing characteristic structural dimorphism, does not exhibit even the slight signs of heterostlylous properties physiologically. This is a deviation from the usual behavior of normal heterostylous plants. What is interesting is the fact that the physiological behavior of this species is quite contrary to that of P. japonica which is considered to be the most highly specialized dimorphic plant. Thus it is assurred that if some species of this family had taken a heterostylic form in its course of development from autogamy to allogamy, P. seoticosa would be the least differentiated type of dimorphic forms among the three heterostylous plants, including buckwheat, of this family. The results obtained in this experiment are summarized as follows: 1) P. senticosa has two forms of flower, one, long style-short stamened; the other, short style-long stamened. Not only conspicuous is this primary difference, but the secondary difference, such as pollen grain size, is noticeable between long and short styled individuals, thus expressing structurally the definite trait of a dimorphic plant. 2) Structural alteration of floral parts towards dimorphism has preceeded far less in comparison with those of the P. japonica and F. esculentum. 3) Elaborate studies on fertility reveal that this species does not show the slightest sign of the physiological characteristics of dimorphic plants. In other words, regardless of the modes of combinations, legitimate and illegitimate, fertilization and fruit setting flourish unimpaired. 4) Growth of pollen tubes apparently parallels the results in the fertility, tubes reaching ovary approximately 30 minutes after pollination both in legitimate and illegitimate combinations. Pollen tube penetration appears to be comparatively rapid. 5) A slight difference in the growth of pollen tube seems to exist between legitimate and illegitimate combinations, legitimate union giving slightly faster tube penetration. 6) In the present experiment it was clarified that P. senticosa, known to possess one form of flower in taxonomy, is in reality dimorphic plant having two of flowers. Although this species is definitely heterostylous in floral structure, physiological evidence and pollen tube behavior show that the differentiation of this plant toward the dimorphism has apparently proceeded slightly except for some parts of floral organ. In ordinary heterostylous plants it is a matter of common occurrence that when illegitimately cmbined, there is poor or no fertility, Contrary to the universal property of heterostylous plants, no difference is observed in the fertility and pollen tube growth between the legitimate and illegitimate combinations in the case of P. senticosa. Compared to the P. japonica and F. esculentum, which are supposed to have undergone high degree of dimorphic differentiation, it is an unavoidable conclusion that P. senticosa has not yet developed as a heterostyle plant except for some of its floral parts. If P. japonica is assumed to be the most differentiated type of hetenostylous plant, thenthe P. senticosa would be regarded as the primitive, retaining still the self-fertile nature so common to the Polygonum genus. In nature, however, this plant has a better chance to be pollinated legitimately owing to the two forms of flowers than to be pollinated illegitimately. The author is indebted to Dong Chul, Kim as well as other members of the Department of Plant Breeding and Genetics of Chonnam National University for their efforts out the laborious experiments during the course of the present studies.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.629-635
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• 2001

To improve the ductility of $A1_3Hf$ intermetallics, which are the potential high temperature structural materials, the mechanical alloying behavior. the effect of Cu addition on the $Ll_2$ phase formation and the behavior of vacuum hot-pressed consolidation were investigated. During the mechanical alloying by SPEX mill, the $Ll_2 A1_3Hf$ intermetallics with the grain size of 7~8nm was formed after 6 hours of milling in Al-25at.%Hf system. The $Ll_2$ Phase of Al_3Hf$ intermetallics with the addition of 12.5at.%Cu, similar to that of the binary Al-25at.% Hf, was formed, but the milling time necessary for the formationof the $Ll_2$ phase was delayed form 6 hours to 10 hours. The lattice parameter of ternary $Ll_2(Al+Cu)_3Hf$ intermetallics decreased with the increase of Cu content. The onset temperature of $Ll_2$ to $D0_{23}$ phase in $Al_3Hf$ intermetallics was around 38$0^{\circ}C$, the temperature upon completion varied from 48$0^{\circ}C$ to 5$50^{\circ}C$ as the annealing time. The onset temperature of $Ll_2$ to $D0_{23}$ phase transformation in $(Al+ Cu)_3Hf$ intermetallics increased with the amount of Cu and the highest onset temperature of $700^{\circ}C$ was achieved by the Cu addition of 10at.%. The relative density increased from 89% to 90% with the Cu addition of 10at.% in $Al_3Hf$ intermetallics hot-pressed in vacuum under 750MPa at 40$0^{\circ}C$ for 3 hours. The relative density of 92.5% was achieved without the phase transformation and the grain growth as the consolidation temperature increased from 40$0^{\circ}C$ to 50$0^{\circ}C$ in $(Al+Cu)_3Hf$ intermetallics hot-pressed in vacuum under 750MPa for 3 hours.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.895-905
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• 1994

The solid phase crystallization behavior of undoped amorphous $Si_{1-x}Ge_{x}$ (X=O to 0.53) alloyfilms was studied by X-ray diffractometry(XRD) and transmission electron microscopy(TEM). Thefilms were deposited on thermally oxidized 5" (100) Si wafer by MBE(Mo1ecular Beam Epitaxy) at 300'C and annealed in the temperature range of $500^{\circ}C$ ~ $625^{\circ}C$. From XRD results, it was found that the thermal budget for full crystallization of the film is significantly reduced as the Ge concentration in thefilm is increased. In addition, the results also shows that pure amorphous Si film crystallizes with astrong (111) texture while the $Si_{1-x}Ge_{x}$ alloy film crystallzes with a (311) texture suggesting that the solidphase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized filmshow that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with high density ofcrystalline defects in the grains while that of the $Si_{0.47}Ge_{0.53}$ alloy is more or less equiaxed shape with muchlower density of defects. From these results, we conclude that the crystallization mechanism changes fromtwin-assisted growth mode to random growth mode as the Ge cocentration is increased.ocentration is increased.