• Title/Summary/Keyword: grain growth behavior

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Compaction and Sintering Behavior of Zirconia Powders : II. Sintering Behaviour (지르코니아 분말의 치밀화와 소결거동 : II. 소결거동)

  • Park, H.C.;Kim, K.;Kim, Y.W.;Lee, Y.B.;Oh, K.D.;Riley, Frank L.
    • Journal of the Korean Ceramic Society
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    • v.30 no.6
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    • pp.449-456
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    • 1993
  • Sintering behaviour of zirconia powders prepared by different processing treatment was discussed. About >99% densities of theoretical were obtaiend on sintering at 140$0^{\circ}C$ for 2h in case of 300MPa uniaxially cold-pressed compact. But the lower densities were obtained on sintering above this temperature due to abnormal grain growth enabling the tetragonal to monoclinic phase transformation during cooling resulted in microcracks. All kinds of different dried powders exhibited nearly the same shrinkage behaviour with end-point shrinkage between 19 and 20%, and had maximum shrinkage rate (0.99~1.27%/min) around 120$0^{\circ}C$. During whole sintering process densification was mainly governed by grain growth and rearrangement of agglomerates. Heterogeneous abnormal grain growth and abrupt decrease in shrinkage were observed when continuous interagglomerate pore collapsed into isolated pores.

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Effect of $MnO_2$ Addition on the MIcrostructure and PTCR Characteristics in Semiconducting $BaTiO_3$ Ceramics (반도성 $BaTiO_3$ 세라믹스의 미세구조 및 PTCR 특성에 미치는 $MnO_2$ 첨가 효과)

  • 김준수;김홍수;백남석;이병하
    • Journal of the Korean Ceramic Society
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    • v.32 no.5
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    • pp.567-574
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    • 1995
  • The effect of MnO2 addition to 0.1mol% Sb2O3-doped BaTiO3 ceramics on microstructure and PTCR characteristics was studied. The PTCR characteristics was observed when 0.01 and 0.02 wt% MnO2 were added and sintered at 132$0^{\circ}C$ for 1 hour. The characteristics can be explained by the changes in the number and size of the abnormal grain growth due to the liquid phase during sintering. when the amount of MnO2 addition was 0.03 wt%, the sample showed NTCR characteristics with room-temperature resistivity over 109 Ωm regardless of the sintering temperature. This behavior can be described by the microstructure change due to the abnormal grain growth and charge compensation effect by MnO2 added. The room-temperature resistivity was increased as the amount of MnO2 was increased. And the specific resistivity ratio (pmax/pmin) showed maximum at 0.02wt% MnO2.

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Growth of graphene:Fundamentals and its application

  • Hwang, Chan-Yong;Yu, Gwon-Jae;Seo, Eun-Gyeong;Kim, Yong-Seong;Kim, Cheol-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.38-38
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    • 2010
  • Ever since the experimental discovery of graphene exfoiliated from the graphite flakes by Geim et at., this area has drawn a lot of attention for its possible application in IT industry. For the growth of graphene, chemical vapor deposition (CVD) has been widely used to fabricate the large area graphene. The lateral size of this graphene can be easily controlled by the size of the metal substrate though the chemical etching to remove this substrate is somewhat troublesome. Another problem which is hard to avoid is the folding at the grain boundary. We will discuss the origin of the folding first and introduce the way to avoid this folding. To solve this problem, we have used the various types of micro-thin metal foils. The precise control of hydro-carbon and the carrier gas results in the formation of the graphene on top of substrate. The thickness of graphene layers can be controlled with the control of gas flow on top of Cu substrate in contrast to the previously reported self-limiting growth $behavior^1$. Uniformity of this graphene layer has been checked by micro-raman spectroscopy and SEM. The size of grain can be enhanced by thermal treatment or use of other metal substrate. The dependence of grain size on the lattice size of the substrate will be discussed. By selecting the shape of substrate, we can grow various types of graphene. We will introduce the micron size graphene tube and its application.

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Effect of MnO2 Addition on Sintering and PTCR Properties in Y2O3 doped BaTiO3 Semiconducting Ceramics (MnO2첨가가 Y2O3 doped BaTiO3 반도체 세라믹스의 소결 및 PTCR특성에 미치는 영향)

  • 이준형;박금덕;김정주;조상희
    • Journal of the Korean Ceramic Society
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    • v.27 no.1
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    • pp.7-12
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    • 1990
  • The influence of MnO2 on the sintering property and PTCR behavior of(Ba0.8Sr0.2)TiO2 has been investigated. And the densities, grain sizes and electrical resitivities of specimens were measured as a function of doping with Mn ion of varying concentration. The density and grain size of the sintered specimens were almost the same regardless of MnO2 addition up to 0.2mol% MnO2. But in the case of 0.25mol% MnO2 addition, abnormal grain growth was appeared. So the grain size distribution was wide and density decreased greatly. The room-temperature resistivity increased as Mn content increased and the temperature coefficient of resistivity was highest in the case of 0.15mol% MnO2 addition.

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Effect of Crack Closure on the Fatigue Crack Growth Behavior of Forged AI7050-T7452 (AI7050-T7452 단조재의 피로균열성장에 대한 균열닫힘의 영향)

  • Lee, W.S.;Park, J.Y.;Lee, H.W.
    • Journal of the Korean Society for Precision Engineering
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    • v.14 no.7
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    • pp.82-90
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    • 1997
  • When a structure is made by the process of forging, it has the different mechanical properties from those it has before the process. This study is based on the crack closure phenomenon of the crack growth behavior of forged AI7050-T7452. The specimens were prepared in three kinds of forging ratio in order to find out the effects of crack closure on the forged material and compare the crack growth behavior with not-forged aluminum. COD method and strain gage method were used in measuring the crack closure stress and the results from those methods were compared each other. FEM analysis was applied to verify the effective stress intensity factor range by the superposition of the crack closure load to the crack tip. In the result of this study, the crack closure stress decreased with increasing the forging ratio due to the finer grain size and the brittle manner.

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Electrical Properties and Temperature Stability of Dysprosium and Erbium Co-doped Barium Titanate with Perovskite Structure for X7R MLCCs (Dysprosium과 Erbium이 동시 첨가된 X7R MLCC용 페로브스카이트 BaTiO3의 전기적특성과 온도안정성)

  • Noh, Tai-Min;Kim, Jin-Seong;Ryu, Ji-Seung;Lee, Hee-Soo
    • Journal of the Korean Ceramic Society
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    • v.48 no.4
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    • pp.323-327
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    • 2011
  • The effects of $Dy_2O_3$ and $Er_2O_3$ co-doping on electrical properties and temperature stability of barium titanate ($BaTiO_3$) ceramics were investigated in terms of microstructure and structural analysis. The dielectric constant and the insulation resistance (IR) of 0.7 mol% $Dy_2O_3$ and 0.3 mol% $Er_2O_3$ co-doped dielectrics had about 60% and 20% higher than the values of undoped one, respectively, and the temperature coefficient of capacitance (TCC) met the X7R specification. The addition of $Dy_2O_3$ contributed to electrical properties caused by increase of tetragonality; however, preferential diffusion of $Dy^{3+}$ ions toward A site in $BaTiO_3$ grain exhibited an adverse effect on temperature stability by grain growth. On the other hand, The $Er_2O_3$ addition in $BaTiO_3$ could affect the TCC behavior and the IR with suppression of grain growth caused by reinforcement of grain boundary and electrical compensation. Therefore, the enhanced electrical properties and temperature stability through the co-doping could be deduced from the increase of tetragonality and the suppression of grain growth.

Effect of SiC Particle Size on the Microstructure and Mechanical Properties Of Al2O3-SiC Composite (Al2O3-SiC 복합재료의 미세조직 및 기계적 물성에 미치는 SiC 원료분말의 크기 영향)

  • 채기웅
    • Journal of the Korean Ceramic Society
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    • v.41 no.2
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    • pp.125-130
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    • 2004
  • The effect of SiC particle size on the microstructures and mechanical properties of A1$_2$O$_3$-SiC composite was investigated. Two types of SiC powders having average particle sizes of 0.15 ${\mu}{\textrm}{m}$ and 3 ${\mu}{\textrm}{m}$ were used. The grain growth in the specimen containing 0.15 ${\mu}{\textrm}{m}$ SiC was effectively inhibited due to the fine SiC particles. However, after the formation of some abnormal grains, fast and exaggerated grain growth occurred which led to the microstructure of large grains with irregular shape. Fracture strength decreased due to the abnormal large grains. On the other hand, for specimen containing 3 ${\mu}{\textrm}{m}$ SiC showed normal grain growth behavior from initial sintering stage. Large SiC particles, however, effectively inhibited exaggerated grain growth after nucleation of a few abnormal grains. As a consequence, microstructure consisted of homogeneous elongated grains. In the A1$_2$O$_3$-2.5SiC(0.15 ${\mu}{\textrm}{m}$)-2.5SIC(3 ${\mu}{\textrm}{m}$) composite fabricated by mixing the two types of SiC powder, abnormal grain growth occurred. However, the good fracture strength was maintained regardless of microstructural changes in this specimen.

Wear Behavior of Silicon Nitride Depending on Gas Pressure Sintering Time (질화규소의 가스압 소결 (GPS) 시간에 따른 마모거동)

  • Lee, Su-Wan;Kim, Seong-Ho
    • Korean Journal of Materials Research
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    • v.10 no.1
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    • pp.83-89
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    • 2000
  • $Si_3N_4$ powder with 2wt% $Al_2O_3$ and 6wt% $Y_2O_3$ additives was sintered by gas pressure sintering (GPS) technique. The variations in the unlubricated wear behavior depending on sintering time were compared. Tribological properties depending on sintering time are associated with fracture toughness as well as flexural strength of materials. When increasing the sintering time, the larger elongated grains were formed as a result of exaggerated grain growth. As the fracture toughness and flexural strength decreased, the wear volume increased. On the basis of these experimental results, the unlubricated wear properties of silicon nitride were found to be governed mostly by both the fracture toughness and the flexural strength of the material.

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