• Journal of Powder Materials
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• v.2 no.1
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• pp.29-35
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• 1995

In this study the calcined condition and characteristic of Cu-Ni-Zn ferrite powder were investigated. The Cu-Ni-Zn ferrite powder has been synthesized by the thermal decomposition of the organic acid salt. This process did not require a strict pH control and provided the uniform composition and fine powder with about 0.3 $\mu\textrm{m}$. The XRD diffraction pattern of this powder showed about 50% spinel phase. The optimum calcination was found to be done at $700^{\circ}C$ for one hour. After the calcination, the amount of spinel increased to 90%. The distribution of the particle size showed bimodal peaks, one was about 0.5 $\mu\textrm{m}$ and the other was about 20 $\mu\textrm{m}$. The large particles of 20 $\mu\textrm{m}$ were the agglomeration of fine Particles. The mean Particle size of the powder was about 0.4 $\mu\textrm{m}$. The powder was compacted under 100 MPa pressure and sintered at 1100~ $1250^{\circ}C$ for one hour in air. The density of ferrites specimen was a function of the sintering temperature. The higher the temperature, the denser the ferrite. The maximum relative density of the sintered ferrite was about 93% at $1250^{\circ}C$. The grain size of sintered specimen at $1200^{\circ}C$ was 5 $\mu\textrm{m}$ and homogeneous.

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.471-477
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• 1999

Fe and Fe-Mo binder were used to produce TiB2 based cermet by a pressureless sintering. The densification behaviour of TiB2-Fe-Mo cermet during liquid-phase sintering in argon was studied in relation to binder phase charactertics. The effects of Mo addition and sintering condition on the sintering behaviour and mechanical properties were also investigated. TiB2-based cermets with Fe-Mo binder composition showed a better sinterability than the cermets with only Fe binder. In TiB2-Fe-Mo cermet higher densities in the wide temperature range were obtained and also fully densified sintered cermet were obtained at 1873K The enhancement in the densification phenomenon of TiB2-Fe-Mo system can be explained by improved liquid phase wettability associated with the roles of Mo components as solute atoms. When Fe-Mo binders were used cermets with a finer grain size and enhanced mechanical properties wereproduced and new phases such as Fe2B and Mo2FeB2 were observed in the sintered cermet. The highest bending strength was obtained from the 20vol% Fe-Mo cermet and these hardness-fracture toughness combination in the wide binder compositions is better than that of TiB2-Fe cermet. In order to improve mechanical properties microstructure control with high purity powders is desirable because high purity powders prevent the formation of Fe2B and Mo2FeB2 phase which comsume the ductile binder phase.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.571-576
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• 1988

The microstructure and electrical properties of 0.02Pb[Cd1/2W1/2)O3-0.505PbZrO3-0.475PbTiO3 with MnO2 addition have been investigated. The amount of MnO2 addition was 0, 0.2, 0.4, 0.6, 0.8, 1wt%, respectively. When MnO2 is added up to 0.2wt%, Mn3+ which is substituted for Ti4+ site make hole and act as a acceptor. When MnO2 is added over 0.2wt% Mn3+ which is substituted for Cd2+ site create electron and act as a donor. The variation of grain size show that it was rapidly increased by 0.4wt% addition of MnO2, and while that in the range of over 0.6wt% addition of MnO2 it was decreased. The solid solution range of MnO2 that assumed in this composition according to the variations of microstructure and electrical properties was 0.4-0.6wt%.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.385-390
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• 2004

An unique ceramic material produced through unidirectional solidification with eutectic composition of two-phase oxides was introduced recently. This composite material has the microstructure of coupled networks of two single crystals interpenetrate each other without grain boundaries. Depending on this microstructure this material, called Melt Growth Composite (MGC), can sustain its room temperature strength up to 1$700^{\circ}C$ (near its melting point) and offer strong oxidization-resistant ability, making its characteristics quite ideal for the gas turbine application. The research project on MGC started in 2001 with the objective of establishing component technologies for MGC application to the high temperature components of the gas turbine engine. MGC turbine nozzles are expected to improve efficiency of gas turbine. However, reduction of the thermal stress is required since high thermal stress is easily generated in MGC turbine nozzles due to temperature distribution. Firstly, the hollow nozzle shape was optimized to reduce thermal stress using numerical analysis. From the results of the first hot gas flow tests, the thermal stress due to span-wise temperature distribution was required to be reduced, and separated nozzle to three pieces was designed. This was tested in hot gas flow at 140$0^{\circ}C$ level, and temperature distributions on the nozzle surface were obtained and stress field was evaluated.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.33.1-33.1
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• 2009

Lead-free (1-x)$(Na_{0.5}K_{0.5})NbO_3$-xBa($Ti_{0.9}Sn_{0.1})O_3$ [NKN-BTS-100x] ceramics doped with 1 mol% $MnO_2$ have been prepared by the conventional solid state method and their structural and piezoelectric properties were investigated. The NKN-BTS-100x ceramics exhibited a dense and homogeneous microstructure when they were sintered at $1030-1150^{\circ}C$. Grain growth was observed for the specimen sintered at relatively low temperature of $1050^{\circ}C$. A tetragonal/orthorhombic morphotropic phase boundary (MPB) in the perovskite structure was also appeared for the NKN-BTS-100x ceramics (0.04$1050^{\circ}C$. The enhanced piezoelectric properties in the NKN-BTS ceramics with a MPB composition were obtained. Especially, for the NKN-BTS-6 ceramics, a high dielectric constant (${\varepsilon}^T_3/\varepsilon_0=1,400$), piezoelectric constant ($d_{33}=237$) and electromechanical coupling factor ($k_p=0.42$) were obtained.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.531-536
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• 2003

The electromagnetic properties and microstructures of the ferrites based on ($Ni_{0.2}$ $Cu_{0.2}$ $Zn_{0.6}$)$_{1.085}$($Fe_2$$O_3$)$_{0.915}$ were investigated by changing the amount of additive SnO$_2$and CaO and the sintering temperatures. Addition of $SnO_2$caused pores in the specimen. There was no variation of grain size by changing the amount of additives. Total loss was reduced when ($Ni_{0.2} $Cu_{0.2}$ $Zn_{ 0.6}$)$_{1.085}$ ($Fe_2$$O_3$)$_{0.915}$ composition was sintered at $1150^{\circ}C$ rather than $1300^{\circ}C$. Addition of CaO was useful to reduce the total loss because it increased the sintering density. The lowest total loss was obtained when 0.06 wt% $SnO_2$and 0.4 wt% CaO were added at the same time.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.708-718
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• 1996

The microstructure and electrical properties of the nonlinear ZnO varistor with A1$_{2}$ $O_{3}$ additions is investigated. The variation of nonlinear behavior with A1$_{2}$ $O_{3}$ additions is indicated from J-E and C-V measurement to be a result of the change of the interface defects density $N_{t}$ at the grain boundaries and the donor concentration $N_{d}$ in the ZnO grains. The optimum composition which has the nonlinear coefficients of -57 was observed in the sample with 0.005wt% A1$_{2}$ $O_{3}$ additions. The conduction mechanism at the pre-breakdown region is consistent with a Schottky thermal emission process obeying a relation given by $J^{\var}$exp[-(.psi.-.betha. $E^{1}$2/)kT] and the conduction process at the breakdown region follows a Fowler-Nordheim tunneling mechanism of the form $J^{\var}$exp(-.gamma./E).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.383-389
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• 2000

The relationship between the DC degradation characteristics of the ZnO varistor and the ambient sintering-process is investigated in this study. ZnO varistors made o matsuoka’s composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the extraordinary electrical-furnace which is equipped with the vacuum system. Gases used in sintering process were oxygen nitrogen argon and air. Using XRD and SEM the phase and microstructure of samples were analyzed respectively. The conditions of DC degradation tests were conducted at 115$\pm$2$^{\circ}C$ for 13 h. Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Frequency analysis are performed to understand electrical properties as DC degradation test. From above analysis it is found that the ZnO varistor sintered in oxygen atmosphere showed superior properties at the DC degradation test and degradation phenomenon of ZnO varistor is caused by the change of electrical properties in grain boundary. These results are in accordance with Gupta’s degradation model.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.10
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• pp.559-563
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• 2000

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also the composition of SCT thin films were closed to stoichiometry(1.081∼1.117 in A/B/ ratio). The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80∼+90[^${\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 2000[kHz]. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increase.