• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.623-626
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• 2004

[ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.425-430
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• 2004

In this paper, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PMN-PZT ceramics were manufactured with the variations of sintering times, and their microstructural, piezoelectric and dielectric properties were investigated. To manufacture multilayer piezoelectric transformer, the low temperature sintering composition is need, hence, $Li_2CO_3$ and $Bi_2O_3$ were used as sintering aids and the specimens were sintered during 30, 60, 90, 120, 150 and 180 minutes, respectively. At the specimen sintered during 90 minute, mechanical quality factor(Qm), electromechanical coupling factor(kp) and dielectric constant were showed the optimum values of 2356, 0.504 and 1266, respectively. All the specimens showed tetragonality phase, and pyrochlore phase was not shown.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.97-101
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• 2004

W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.536-546
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• 1996

The TiC-Ni/Al reaction-bonding composites were prepared by the infiltration of Ni/Al melt into the TiC preforms. The microstructure the reaction composition crystalline phase and the mechanical properties of the composites were investigated. During the reaction-bonding Ni/Al mixture had a good wettability and per-meability with TiC preform and pore-free and fully dense sintered bodies were produced. In the case of the Ni/Al atomic ratio of 0.3 and 0.5 TiC raw particle shape was changed to irregular particles because of the decomposition in the liquid matrix and its phenomena was more distinguished in the Al-rich liquid matrix. With increasing more than 1 of the Ni/Al atomic ratio the sample of TiC grain shape was changed from spherical to palatelet particles. Also with increasing the atomic ratio of Ni/Al bending strength and fracture spherical to palatelet particles. Also with increasing the atomic ratio of Ni/Al bending strength and fracture toughness were increased and its maximum value was 1073 MPa and 11 MPa.m1/2 respectively.

• Journal of the Korean Ceramic Society
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• v.44 no.10
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• pp.537-541
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• 2007

Microwave dielectric properties of $0.95 Ca_{0.85}Nd_{0.1}TiO_3-0.05LnAlO_3$ (Ln=Sm, DH, Er) were investigated as a function of sintering temperature and lanthanide ion type. A single perovskite phase with an orthorhombic structure was obtained throughout the entire range of composition. The dielectric constant (K) was dependent upon the dielectric polarizabilities and the B-site bond valence in the $ABO_3$ perovskite structure. The quality factor (Qf) of the specimens with $ErAlO_3$ was smaller than those with $SmAlO_3\;and/or\;DyAlO_3$ due to the smaller grain size. The temperature coefficient of resonant frequency (TCF) could be controlled from $107.28ppm/^{\circ}C$ at Ln=Sm to $87.23ppm/^{\circ}C$ at Ln=Er due to the changes of B-site bond valence in the $ABO_3$ perovskite structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.165-169
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• 2015

In this paper, in order to develop the composition ceramics with the excellent dielectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics were fabricated by the conventional solid-state method. The effects of ZnO addition on their microstructure and piezoelectric properties were systematically investigated. The rhombohedral-tetragonal phase coexistence has been found in the ceramics without ZnO content and then with further increasing ZnO content, specimens exhibited tetragonal phase. The optimized ZnO content formed liquid phase and aided the grain growth of specimens. When 0.4 wt% ZnO was added, the optimal physical properties ($d_{33}=422pC/N$, $d_{31}=161pC/N$, ${\varepsilon}_r=1,905$, $k_p=0.55$, $Q_m=160$) were obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.901-905
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• 2008

In this study, $0.95(K_{0.5}Na_{0.5})NbO_{3}-0.05Li(Sb_{0.8}Nb_{0.2})O_{3}+0.2\;wt%Ag_{2}O$ were investigated as a variations of sintering times in order to improve dielectric and piezoelectric properties of lead-free piezoelectric ceramics. $Ag_{2}O$ were used as sintering aids and the specimens were sintered during 3, 5, 7, 9 and 11 hours, respectively. At the specimen sintered during 7 hour, Electromechanical coupling factor ($k_p$), density, dielectric constant (${\epsilon}_{\gamma}$), piezoelectric constant ($d_{33}$) and curie temperature ($T_c$) of composition ceramics showed the optimal value of 0.450, 4.274 $[g/cm^3]$, 1007, 257 [pC/N] and $396^{\circ}C$, respectively.

• Ocean and Polar Research
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• v.35 no.4
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• pp.281-290
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• 2013

The vertical structure of sediment temperatures in the tidal flats of Geunso Bay and Seonyu Island in western Korea were measured for more than a year and analyzed. Mean temperature decreased with depth in spring and summer. On the contrary, it increased with depth in fall and winter, faithfully reflecting the seasonal variation resulting from the heating and cooling of the surface sediment. The surface sediment temperatures are shown to be strongly dependent on solar radiation, M2, and M4 tidal components. They are also weakly affected by precipitation. Thermal diffusivity of sediment is estimated at each depth and in each of the four seasons by applying the amplitude equation method. In Geunso Bay, the estimated seasonal-mean values decreased with depth, while they showed little change in Seonyu Island. Depth-averaged thermal diffusivity in Geunso Bay ($1.94 {\times}10^{-7}m^2/s$) was smaller than Seonyu Island ($2.20 {\times}10^{-7}m^2/s$). The variability of thermal diffusivity is shown to corelate with sediment composition and sorting from the grain-size analysis of intertidal sediments in Geunso Bay and Seonyu-do.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.522-531
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• 2003

Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+{\delta}}$ high- $T_{c}$ superconductors containing MgO as an additive were fabricated by a solid-state reaction method. Samples with MgO of 5~30 wt% each were sintered at 820~86$0^{\circ}C$ for 24 hours. The structural characteristics, critical temperature, grain size and image of mapping with respect to MgO contents were analyzed by XRD(X-Ray Diffraction), SEM(Scanning Electron Microscope) and EDS(Energy dispersive X-ray spectrometer) respectively. As MgO contents increased, intensity of MgO Peaks and ratio of Bi-2212 phase in superconductors intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.232-235
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• 2008

In this study, in order to develop the composition ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$, $Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution, Bi substitution induced grain growth and increase of sinterablity, And also, Bi substitution suppress secondary phase due to the liquid phase sintering effect. Bi substitution enhanced electromechanical coupling factor ($k_p$) and dielectric constant ($\varepsilon_r$), However, mechanical quality factor($Q_m$) was deteriorated, At the sintering temperature of 870 $^{\circ}C$ and Bi substitution of 1 mol%, density, electromechanical coupling factor ($k_p$), mechanical quality factor ($Q_m$), Dielectric constant ($\varepsilon_r$) and piezoelectric constant ($d_{33}$) of specimen showed the optimum values of 7,878 $g/cm^3$, 0,608, 835, 1603 and 397 pC/N, respectively for multilayer piezoelectric actuator application.